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HL6331G

Renesas Electronics

HL6331G by Renesas Electronics

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Semiconductor Material: AlGaInP; Nominal Output Power: 10 W; Maximum Forward Voltage: 2.4 V; Maximum Threshold Current: 60 mA;

Median Price

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Lifecycle Status

Suppliers In-Stock

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In-Stock Inventory

< 1k

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 612 parts In-Stock

1+ parts

$1.275

100+ parts

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1k+ parts

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10k+ parts

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612

$1.275

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Northwest PG Solutions

USA . 2,150 parts In-Stock

1+ parts

$1.403

100+ parts

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1k+ parts

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10k+ parts

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2,150

$1.403

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Technical Specifications

Laser Diodes HL6331G attributes and parameters. Explore more Laser Diodes devices from Renesas Electronics

Specs

Configuration:

SINGLE WITH BUILT-IN PHOTO DIODE

Maximum Forward Current:

.075 A

Maximum Forward Voltage:

2.4 V

Mounting Feature:

No. of Functions:

1

Maximum Operating Temperature:

60 Cel

Minimum Operating Temperature:

-10 Cel

Optoelectronic Type:

Nominal Output Power:

10 W

Peak Wavelength (nm):

635

Semiconductor Material:

AlGaInP

Shape:

ROUND

Size:

2 mm

Sub-Category:

Laser Diodes

Maximum Threshold Current:

60 mA

Manufacturer Highlights

Renesas Electronics

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