Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Semiconductor Material: InGaAsP; Maximum Operating Temperature: 50 Cel; Minimum Operating Temperature: -10 Cel; Shape: ROUND;
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Laser Diodes HL6320G attributes and parameters. Explore more Laser Diodes devices from Renesas Electronics
Configuration:
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No. of Functions:
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Minimum Operating Temperature:
Optoelectronic Type:
Nominal Output Power:
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Maximum Threshold Current:
BAV99-7-F
Diodes Incorporated
Diodes Inc. BAV99-7-F is a series-connected, center tap diode with 2 elements in a small outline package. It has a max reverse recovery time of 0.004 us and can handle up to 0.3A output current. Ideal for rectification applications requiring fast switching and low reverse current requirements.
LM7805CT
Comset Semiconductors
Other Regulators; No. of Terminals: 3; Maximum Input Voltage Absolute: 35 V; Maximum Voltage Tolerance: 5 %; Operating Temperature (TJ-Min): 0 Cel; Technology: BIPOLAR;
LL4148
Rugao Dachang Electronic
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
SMMBT2222ALT1G
Onsemi
SMMBT2222ALT1G by Onsemi is a NPN BJT transistor with 3 terminals, 0.6A IC, and 40V VCE. It has a hFE of 75, fT of 300MHz, and operates up to 150°C. Ideal for small signal applications in automotive electronics due to AEC-Q101 compliance.
2N7002
Secos
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Maximum Drain Current (ID): .115 A; Maximum Drain-Source On Resistance: 7.5 ohm;
SMBJ18CA
First Components International
TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Maximum Clamping Voltage: 29.2 V; Nominal Breakdown Voltage: 21.1 V; Polarity: BIDIRECTIONAL; Maximum Repetitive Peak Reverse Voltage: 18 V;
M39029/58-360
Molex
CONNECTOR ACCESSORY; Alternate Contact Sources: MILITARY; Removal Tool Sources: MILITARY; Material: COPPER ALLOY; National Stock Number (NSN): 5999004733551; Mating Contacts: M39029/56-348, M39029/57-354;
MBR130T1G
MBR130T1G by Onsemi is a Schottky rectifier diode with max output current of 1A and max repetitive peak reverse voltage of 30V. It operates b/w -65 to 125°C, suitable for surface mount applications in electronics requiring low forward voltage drop.
2N2222A
Allegro MicroSystems
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
Uniohm
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
1N4148
Itt Semiconductor
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
1N4148WS
Diotec Semiconductor Ag
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LM555CMX
Fairchild Semiconductor
PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;
Panjit International
LM555CN
National Semiconductor
PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Surface Mount: NO;
LM317T
STMicroelectronics
ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Package Code: TO-220; Terminal Form: THROUGH-HOLE; JESD-30 Code: R-XSFM-T3; Minimum Input-Output Voltage Differential: 3 V;
BAV99
Infinex
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
LM358N
Harris Semiconductor
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
OPA2277UA/2K5E4
Texas Instruments
OPA2277UA/2K5E4 by Texas Instruments is a dual operational amplifier with low-offset and micropower features. It has a max input offset voltage of 100uV, nominal common mode reject ratio of 140dB, and min slew rate of 0.8V/us. Ideal for industrial applications requiring precise signal amplification in compact designs.
BSS123,215
Nexperia
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Moisture Sensitivity Level (MSL): 1; No. of Terminals: 3; Maximum Time At Peak Reflow Temperature (s): 30;
NX8563LAS517-CD-A
Renesas Electronics
LASER DIODE; Maximum Forward Voltage: 2 V; Maximum Response Time: .00000000012 s; Maximum Operating Temperature: 85 Cel; Semiconductor Material: InGaAsP; Peak Wavelength (nm): 1552;
DL3150-102
DL3150-102 by Onsemi is an 805nm LASER DIODE with AlGaInP material. It operates b/w -10 °C to 60°C, featuring THROUGH HOLE MOUNT. Ideal for applications requiring precise laser emission in a wide temperature range.
TOLD322AAA
Toshiba
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .15 A; Maximum Response Time: .000000001 s; Maximum Forward Voltage: 1.5 V; Minimum Operating Temperature: 0 Cel;
TOED110
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -40 Cel; Maximum Operating Temperature: 70 Cel; Peak Wavelength (nm): 1310;
SFH483406
Infineon Technologies
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Forward Current: 1.8 A; Maximum Operating Temperature: 60 Cel; Semiconductor Material: GaAlAs;
NX8560MC-BC
LASER DIODE; Maximum Forward Voltage: 2 V; Peak Wavelength (nm): 1550; Maximum Forward Current: .15 A; Semiconductor Material: GaAs; Minimum Operating Temperature: 0 Cel;
SDL5032
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Semiconductor Material: GaAlAs; JESD-609 Code: e0; Peak Wavelength (nm): 830;
NX8570SC457-BA-A
LASER DIODE; Minimum Operating Temperature: -5 Cel; Peak Wavelength (nm): 1545; Maximum Operating Temperature: 70 Cel; Maximum Forward Voltage: 2.5 V; Semiconductor Material: InGaAsP;
DL-3144-008S
DL-3144-008S by Onsemi is a GaAs LASER DIODE with Peak Wavelength of 785nm. It has Max Forward Current of 0.055A and operates b/w -10 to 60 °C. Ideal for applications requiring THROUGH HOLE MOUNT optoelectronics in various industries.
NX8570SC6053-BA-AZ
LASER DIODE; Maximum Operating Temperature: 70 Cel; Maximum Forward Voltage: 2.5 V; Minimum Operating Temperature: -5 Cel; Semiconductor Material: InGaAsP; Peak Wavelength (nm): 1605;
TOLD320CCC
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -30 Cel; Semiconductor Material: InGaAs; Maximum Response Time: .000000001 s; Peak Wavelength (nm): 1310;
SDL3034-001
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 65 Cel; Minimum Operating Temperature: -10 Cel; Peak Wavelength (nm): 780;
NX8563LF997-BA-A
LASER DIODE; Maximum Operating Temperature: 70 Cel; Semiconductor Material: InGaAsP; Peak Wavelength (nm): 1599; Maximum Forward Voltage: 1.5 V; Maximum Forward Current: .3 A;
TOLD321CAB
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Voltage: 2 V; Peak Wavelength (nm): 1310; Maximum Response Time: .000000001 s; Semiconductor Material: InGaAs;
NX8570SA517-CA
LASER DIODE; Minimum Operating Temperature: -5 Cel; Maximum Forward Voltage: 2.5 V; Peak Wavelength (nm): 1552; Maximum Forward Current: .3 A; Semiconductor Material: InGaAsP;
NX8570SC437-BA-A
LASER DIODE; Maximum Forward Current: .3 A; Peak Wavelength (nm): 1543; Maximum Operating Temperature: 70 Cel; Semiconductor Material: InGaAsP; Maximum Forward Voltage: 2.5 V;
DL-6146-301
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 405; Minimum Operating Temperature: -10 Cel; Maximum Operating Temperature: 70 Cel;
SDL9952-001
SDL9952-001 by Onsemi is an 830nm LASER DIODE with GaAlAs material. It operates b/w -10 °C to 50°C, suitable for THROUGH HOLE MOUNT applications in optoelectronics.
DL-LS1036
DL-LS1036 by Onsemi is a Laser Diode with 0.11A max forward current, peak wavelength of 635nm, and 2.7V max forward voltage. Ideal for applications requiring laser diodes in temperatures ranging from -10 °C to 50°C with through hole mounting feature.
NDL7740PA
LASER DIODE; Mounting Feature: SURFACE MOUNT; Minimum Operating Temperature: -20 Cel; Maximum Operating Temperature: 65 Cel; Maximum Forward Voltage: 1.5 V; Peak Wavelength (nm): 1550;
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HL6334MG
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; No. of Functions: 1; Maximum Forward Current: .075 A; Shape: ROUND; Nominal Output Power: 10 W;
HL6324MG
LASER DIODE; Peak Wavelength (nm): 635; Shape: ROUND; Maximum Threshold Current: 35 mA; Maximum Operating Temperature: 50 Cel; Configuration: SINGLE WITH BUILT-IN PHOTO DIODE;
HL6316G
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 50 Cel; Nominal Output Power: 3 W; Semiconductor Material: AlGaInP; Maximum Threshold Current: 35 mA;
HL6332G
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Voltage: 2.4 V; Maximum Forward Current: .075 A; No. of Functions: 1; Nominal Output Power: 10 W;
HL6326G
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 60 Cel; Semiconductor Material: AlGaInP; Nominal Output Power: 5 W; Peak Wavelength (nm): 635;
HL6322G
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Nominal Output Power: 15 W; Semiconductor Material: AlGaInP; Shape: ROUND; Peak Wavelength (nm): 635;
HL6335G
LASER DIODE; Maximum Operating Temperature: 50 Cel; No. of Functions: 1; Nominal Output Power: 5 W; Maximum Threshold Current: 30 mA; Minimum Operating Temperature: -10 Cel;
HL6313G
LASER DIODE; Maximum Operating Temperature: 50 Cel; Maximum Threshold Current: 70 mA; Shape: ROUND; Size: 2 mm; Minimum Operating Temperature: -10 Cel;
HL6325G
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 635; Maximum Threshold Current: 50 mA; Maximum Forward Voltage: 2.4 V; Configuration: SINGLE WITH BUILT-IN PHOTO DIODE;
HL6319G
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Nominal Output Power: 10 W; Size: 2 mm; Minimum Operating Temperature: -10 Cel; Peak Wavelength (nm): 635;
HL6331G
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Semiconductor Material: AlGaInP; Nominal Output Power: 10 W; Maximum Forward Voltage: 2.4 V; Maximum Threshold Current: 60 mA;
HL6327MG
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Shape: ROUND; Size: 1.6 mm; No. of Functions: 1; Maximum Operating Temperature: 50 Cel;
HL6321G
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Shape: ROUND; Peak Wavelength (nm): 635; Nominal Output Power: 15 W; Minimum Operating Temperature: -10 Cel;
HL6333MG
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .075 A; Semiconductor Material: AlGaInP; Minimum Operating Temperature: -10 Cel; Maximum Threshold Current: 60 mA;
HL6315G
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Forward Current: .03 A; JESD-609 Code: e0; Semiconductor Material: AlGaInP;
HL6323MG
LASER DIODE; Peak Wavelength (nm): 639; Size: 1.6 mm; Configuration: SINGLE WITH BUILT-IN PHOTO DIODE; Maximum Threshold Current: 65 mA; No. of Functions: 1;
HL6312G
LASER DIODE; Maximum Threshold Current: 70 mA; Minimum Operating Temperature: -10 Cel; Size: 2 mm; Maximum Operating Temperature: 50 Cel; Shape: ROUND;
HL6314MG
LASER DIODE; Maximum Threshold Current: 35 mA; Nominal Output Power: 3 W; Peak Wavelength (nm): 635; Minimum Operating Temperature: -10 Cel; No. of Functions: 1;
HL6328MG
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Configuration: SINGLE WITH BUILT-IN PHOTO DIODE; No. of Functions: 1; Size: 1.6 mm; Shape: ROUND;
Opnext
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Semiconductor Material: AlGaInP; Size: 2 mm; Nominal Output Power: 15 W; Configuration: SINGLE WITH BUILT-IN PHOTO DIODE;
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