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HL6325G

Renesas Electronics

HL6325G by Renesas Electronics

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 635; Maximum Threshold Current: 50 mA; Maximum Forward Voltage: 2.4 V; Configuration: SINGLE WITH BUILT-IN PHOTO DIODE;

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

< 1k

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ComSIT Distribution GmbH

Germany . 48 parts In-Stock

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48

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ComSIT USA

USA . 48 parts In-Stock

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48

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Northwest PG Solutions

USA . 162 parts In-Stock

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162

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Native Components

USA . 103 parts In-Stock

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103

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Technical Specifications

Laser Diodes HL6325G attributes and parameters. Explore more Laser Diodes devices from Renesas Electronics

Specs

Configuration:

SINGLE WITH BUILT-IN PHOTO DIODE

Maximum Forward Current:

.06 A

Maximum Forward Voltage:

2.4 V

Mounting Feature:

No. of Functions:

1

Maximum Operating Temperature:

60 Cel

Minimum Operating Temperature:

-10 Cel

Optoelectronic Type:

Nominal Output Power:

5 W

Peak Wavelength (nm):

635

Semiconductor Material:

AlGaInP

Shape:

ROUND

Size:

2 mm

Sub-Category:

Laser Diodes

Maximum Threshold Current:

50 mA

Manufacturer Highlights

Renesas Electronics

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