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CQF25C/D21

NXP Semiconductors

CQF25C/D21 by NXP Semiconductors

CQF25C/D21 by NXP Semiconductors is a high-performance laser diode with a peak wavelength of 875 nm and a max forward current of 0.15 A. It operates b/w -10 °C to 60 °C, making it ideal for various optoelectronic applications. With an ultra-fast response time of 0.5 ns, it's perfect for precision tasks.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 4,206 parts In-Stock

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Anansix

USA . 2,440 parts In-Stock

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Digiode

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Northwest PG Solutions

USA . 1,527 parts In-Stock

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$3.334

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One Stop Electronics

USA . 1,356 parts In-Stock

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$5.100

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UNI Independent Distributors

Spain . 6,799 parts In-Stock

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Native Components

USA . 638 parts In-Stock

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Corphita

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Overview

Unlock the potential of your projects with the CQF25C/D21 laser diode from NXP Semiconductors, a leader in innovative technology. This high-quality component offers exceptional performance in diverse applications, from medical devices to industrial automation. With its reliable operation across a wide temperature range and lightning-fast response times, it ensures precision and efficiency for your designs, delivering unparalleled value and reliability that you can trust. Experience the difference today!

Feature Benefit Bullets

Maximum Forward Current: 0.15 A

This low forward current ensures energy efficiency, making the laser diode suitable for applications where power consumption is critical.

Peak Wavelength: 875 nm

The 875 nm wavelength is ideal for applications in infrared sensing and optical communication, providing effective performance in various environments.

Optoelectronic Type: Laser Diode

Being a laser diode means it offers coherent light emission, suitable for high-performance applications in telecommunications and industrial uses.

Maximum Operating Temperature: 60 °C

A maximum operating temperature of 60 °C makes this laser diode dependable in a wide range of conditions, ensuring consistent performance without overheating.

Minimum Operating Temperature: -10 °C

The capability to operate down to -10 °C extends its use in colder environments, enhancing the versatility of the product.

Maximum Response Time: 0.5 ns

Such a fast response time allows for high-speed modulation and signal processing, making it suitable for advanced communication systems.

Semiconductor Material: AlGaAs

AlGaAs semiconductor material offers high efficiency and low threshold currents, which improves the overall performance and longevity of the laser diode.

Spectral Bandwidth: 4.5 nm

A narrow spectral bandwidth leads to higher precision in applications such as spectroscopy and laser ranging, making the diode a smart choice for specialized tasks.

Mounting Feature: Through Hole Mount

The through-hole mounting feature simplifies assembly and enhances durability in electronic circuits, making installation easy and reliable.

Maximum Forward Voltage: 2.5 V

Low forward voltage requirements allow for compatibility with various power sources, facilitating integration into numerous applications without the need for complex voltage regulation.

Technical Specifications

Laser Diodes CQF25C/D21 attributes and parameters. Explore more Laser Diodes devices from NXP Semiconductors

Specs

Maximum Forward Current:

.15 A

Maximum Forward Voltage:

2.5 V

Mounting Feature:

Maximum Operating Temperature:

60 Cel

Minimum Operating Temperature:

-10 Cel

Optoelectronic Type:

Peak Wavelength (nm):

875

Maximum Response Time:

.0000000005 s

Semiconductor Material:

AlGaAs

Spectral Bandwidth:

4.5 m

Sub-Category:

Laser Diodes

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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