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CQF25B/D14

NXP Semiconductors

CQF25B/D14 by NXP Semiconductors

CQF25B/D14 by NXP Semiconductors is a high-performance laser diode with a peak wavelength of 850 nm and a max forward current of 0.15 A. It operates b/w -10 °C to 60 °C, making it ideal for various optoelectronic applications. With a rapid response time of just 0.5 ns, it's perfect for communication systems.

Median Price

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1k+

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Digiode

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Anansix

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Vyrian

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One Stop Electronics

USA . 1,227 parts In-Stock

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Northwest PG Solutions

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Corphita

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UNI Independent Distributors

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Native Components

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Overview

Elevate your projects with the CQF25B/D14 laser diode from NXP Semiconductors, a leader in innovative technology. With its reliable performance across a wide temperature range and exceptional response time, this laser diode is perfect for diverse applications, from industrial sensing to communications. Experience unparalleled quality and precision, backed by NXP's commitment to excellence, ensuring you get the best value and benefits for your investment.

Feature Benefit Bullets

Maximum Forward Current: 0.15 A

This optimal forward current allows for efficient operation and reduces the risk of overheating, making this laser diode reliable for various applications.

Peak Wavelength: 850 nm

The 850 nm wavelength is ideal for applications such as optical communications and sensors, where efficient light coupling and minimal absorption in fiber optics are crucial.

Optoelectronic Type: LASER DIODE

As a laser diode, this product offers coherent light emission, enabling high precision and energy efficiency in optical applications.

Maximum Operating Temperature: 60 °C

The ability to operate at temperatures up to 60 °C ensures durability and stable performance in various environmental conditions.

Minimum Operating Temperature: -10 °C

With a minimum operating temperature of -10 °C, this laser diode is suitable for outdoor and low-temperature environments, broadening its application scope.

Maximum Response Time: 0.5 ns

A fast response time of 0.5 ns allows for high-speed data transmission and precise modulation, critical for high-performance communication systems.

Semiconductor Material: AlGaAs

Constructed with AlGaAs material, this diode provides excellent efficiency and high output power, making it ideal for demanding photonic applications.

Spectral Bandwidth: 4.5 nm

A spectral bandwidth of 4.5 nm allows for versatility in wavelength-specific applications, enhancing the diode's adaptability in diverse uses.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mount feature promotes easy integration into various circuit designs, ensuring secure and reliable connections.

Maximum Forward Voltage: 2.5 V

With a maximum forward voltage of 2.5 V, this laser diode is energy-efficient and compatible with a wide range of power supply configurations.

Technical Specifications

Laser Diodes CQF25B/D14 attributes and parameters. Explore more Laser Diodes devices from NXP Semiconductors

Specs

Maximum Forward Current:

.15 A

Maximum Forward Voltage:

2.5 V

Mounting Feature:

Maximum Operating Temperature:

60 Cel

Minimum Operating Temperature:

-10 Cel

Optoelectronic Type:

Peak Wavelength (nm):

850

Maximum Response Time:

.0000000005 s

Semiconductor Material:

AlGaAs

Spectral Bandwidth:

4.5 m

Sub-Category:

Laser Diodes

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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