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CQF25A/D52

NXP Semiconductors

CQF25A/D52 by NXP Semiconductors

CQF25A/D52 by NXP Semiconductors is a high-performance laser diode with a peak wavelength of 820 nm and a max forward current of 0.15 A. It operates efficiently b/w -10 °C to 60 °C, making it ideal for various optoelectronic applications. With an ultra-fast response time of 0.5 ns, it's perfect for precision tasks in communication systems.

Median Price

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3

In-Stock Inventory

1k+

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Digiode

USA . 3,971 parts In-Stock

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Vyrian

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Anansix

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Native Components

USA . 455 parts In-Stock

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$0.088

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Northwest PG Solutions

USA . 884 parts In-Stock

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One Stop Electronics

USA . 693 parts In-Stock

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$14.100

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UNI Independent Distributors

Spain . 3,711 parts In-Stock

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Corphita

USA . 2,831 parts In-Stock

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Overview

Elevate your projects with the CQF25A/D52 laser diode from NXP Semiconductors, a leader in innovation and quality. Delivering superior performance and reliability, this versatile component excels in diverse applications, from industrial automation to medical devices. With its impressive responsiveness and robust temperature range, you’ll gain unmatched efficiency and longevity, ensuring your solutions shine brighter than the competition. Choose NXP for excellence that inspires confidence!

Feature Benefit Bullets

Maximum Forward Current: 0.15 A

The maximum forward current of 0.15 A indicates strong performance while ensuring safety and reliability, making this laser diode suitable for various applications without risk of damage.

Peak Wavelength: 820 nm

The peak wavelength of 820 nm is optimal for applications requiring infrared light, such as communication and sensing devices, offering versatility in usage.

Optoelectronic Type: Laser Diode

As an optoelectronic device, this laser diode provides efficient light emission, making it ideal for various technological applications including fiber optics and laser-based sensors.

Maximum Operating Temperature: 60 °C

With a maximum operating temperature of 60 °C, this laser diode can function in a range of environments, ensuring reliable performance in both commercial and industrial settings.

Minimum Operating Temperature: -10 °C

The ability to operate down to -10 °C expands the range of applications, particularly in colder environments, ensuring consistent performance across a wide temperature spectrum.

Maximum Response Time: 0.5 ns

A response time of 0.5 ns allows for high-speed applications, making this laser diode suitable for data transmission and communication technologies where speed is critical.

Semiconductor Material: AlGaAs

Constructed from AlGaAs, this laser diode offers efficient light emission and low threshold current, resulting in better performance and effectiveness in optical devices.

Spectral Bandwidth: 4.5 nm

The spectral bandwidth of 4.5 nm allows for a balance between stability and versatility, making this laser diode appropriate for a range of applications that require precise light characteristics.

Mounting Feature: Through Hole Mount

The through hole mounting feature simplifies the integration process into various circuits and devices, making installation easy and reliable for users.

Maximum Forward Voltage: 2.5 V

With a maximum forward voltage of 2.5 V, this diode can operate efficiently with low power consumption, making it an energy-efficient choice for modern electronic devices.

Technical Specifications

Laser Diodes CQF25A/D52 attributes and parameters. Explore more Laser Diodes devices from NXP Semiconductors

Specs

Maximum Forward Current:

.15 A

Maximum Forward Voltage:

2.5 V

Mounting Feature:

Maximum Operating Temperature:

60 Cel

Minimum Operating Temperature:

-10 Cel

Optoelectronic Type:

Peak Wavelength (nm):

820

Maximum Response Time:

.0000000005 s

Semiconductor Material:

AlGaAs

Spectral Bandwidth:

4.5 m

Sub-Category:

Laser Diodes

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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