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CQF25B/D13

NXP Semiconductors

CQF25B/D13 by NXP Semiconductors

CQF25B/D13 by NXP Semiconductors is a high-performance laser diode with a peak wavelength of 850 nm and a max forward current of 0.15 A. It operates b/w -10 °C to 60 °C, making it ideal for various optoelectronic applications. With an ultra-fast response time of 0.5 ns, it's perfect for data communication systems.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Digiode

USA . 3,707 parts In-Stock

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Anansix

USA . 1,682 parts In-Stock

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Vyrian

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One Stop Electronics

USA . 1,628 parts In-Stock

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$16.100

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UNI Independent Distributors

Spain . 6,224 parts In-Stock

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Corphita

USA . 2,253 parts In-Stock

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Native Components

USA . 360 parts In-Stock

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Northwest PG Solutions

USA . 202 parts In-Stock

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Overview

Elevate your projects with the CQF25B/D13 laser diode from NXP Semiconductors, a leader in high-performance solutions. Designed for versatility across various applications, this reliable component provides exceptional quality and stability, ensuring peak performance even in challenging conditions. With rapid response times and robust temperature resilience, it delivers unmatched value, making it an ideal choice for innovators seeking efficiency and excellence in their designs.

Feature Benefit Bullets

Maximum Forward Current: 0.15 A

This current rating ensures that the laser diode can operate efficiently without overheating, making it suitable for various applications.

Peak Wavelength: 850 nm

The 850 nm wavelength is ideal for applications such as optical communications and sensing, providing effective performance in these areas.

Optoelectronic Type: LASER DIODE

As a laser diode, it delivers coherent light, which is beneficial for applications requiring focused light output, such as laser printing and data transmission.

Maximum Operating Temperature: 60 °C

The high maximum operating temperature allows this diode to function reliably in demanding environments, enhancing its versatility in various applications.

Minimum Operating Temperature: -10 °C

The ability to operate at low temperatures expands the usability of this diode in colder environments, ensuring reliability across different conditions.

Maximum Response Time: 0.5 ns

This fast response time ensures high-speed operation, making the diode suitable for applications such as high-frequency communication and fast data processing.

Semiconductor Material: AlGaAs

AlGaAs semiconductor material provides excellent efficiency and reliability, enhancing the performance of the laser diode in various optoelectronic applications.

Spectral Bandwidth: 4.5 nm

A narrow spectral bandwidth allows for precise wavelength selection, which is crucial for applications that require specific light frequencies, such as spectroscopy.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature allows for easy integration into various circuit boards, offering enhanced stability and ease of assembly in different designs.

Maximum Forward Voltage: 2.5 V

A low maximum forward voltage helps in reducing power consumption, making this laser diode energy-efficient while maintaining performance.

Technical Specifications

Laser Diodes CQF25B/D13 attributes and parameters. Explore more Laser Diodes devices from NXP Semiconductors

Specs

Maximum Forward Current:

.15 A

Maximum Forward Voltage:

2.5 V

Mounting Feature:

Maximum Operating Temperature:

60 Cel

Minimum Operating Temperature:

-10 Cel

Optoelectronic Type:

Peak Wavelength (nm):

850

Maximum Response Time:

.0000000005 s

Semiconductor Material:

AlGaAs

Spectral Bandwidth:

4.5 m

Sub-Category:

Laser Diodes

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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