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CQF25A/D12

NXP Semiconductors

CQF25A/D12 by NXP Semiconductors

CQF25A/D12 by NXP Semiconductors is a high-performance laser diode with a peak wavelength of 820 nm and a max forward current of 0.15 A. It operates b/w -10 °C to 60 °C, making it ideal for various optoelectronic applications. With a rapid response time of just 0.5 ns, it's perfect for precision tasks.

Median Price

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Lifecycle Status

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3

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1k+

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Digiode

USA . 4,418 parts In-Stock

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Vyrian

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Anansix

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One Stop Electronics

USA . 1,593 parts In-Stock

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Northwest PG Solutions

USA . 1,304 parts In-Stock

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Corphita

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UNI Independent Distributors

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Native Components

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Overview

Unlock superior performance and reliability with the CQF25A/D12 laser diode from NXP Semiconductors. Renowned for their cutting-edge technology, NXP ensures this high-quality product excels in diverse applications, from industrial automation to medical devices. With impressive temperature resilience and rapid response times, this laser diode guarantees precision and durability, empowering your innovations and enhancing operational efficiency. Elevate your projects today!

Feature Benefit Bullets

Maximum Forward Current: 0.15 A

This moderate current rating makes the laser diode suitable for various applications while ensuring it operates efficiently without overheating.

Peak Wavelength: 820 nm

The 820 nm peak wavelength is optimal for applications requiring infrared light, making it ideal for communication and sensing technologies.

Optoelectronic Type: LASER DIODE

As a laser diode, it provides coherent light, making it effective for precise applications such as imaging and ranging.

Maximum Operating Temperature: 60 °C

A higher maximum operating temperature allows for greater versatility in environments with fluctuating temperatures, ensuring reliable performance.

Minimum Operating Temperature: -10 °C

With the ability to operate at lower temperatures, this diode can be used in diverse settings, including outdoors or in refrigerated applications.

Maximum Response Time: 0.0000000005 s

The extremely fast response time enhances the product's suitability for high-speed communication and real-time processing applications.

Semiconductor Material: AlGaAs

Utilizing AlGaAs material allows for efficient performance at the specified wavelengths, ensuring high output power and low threshold currents.

Spectral Bandwidth: 4.5 nm

A narrow spectral bandwidth indicates the ability to provide a stable wavelength output, which is essential for various precision applications.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature allows for easy installation and increased robustness in circuit board assemblies, enhancing durability.

Maximum Forward Voltage: 2.5 V

A lower maximum forward voltage aids in minimizing power consumption, making this diode an energy-efficient choice for a variety of electronic designs.

Technical Specifications

Laser Diodes CQF25A/D12 attributes and parameters. Explore more Laser Diodes devices from NXP Semiconductors

Specs

Maximum Forward Current:

.15 A

Maximum Forward Voltage:

2.5 V

Mounting Feature:

Maximum Operating Temperature:

60 Cel

Minimum Operating Temperature:

-10 Cel

Optoelectronic Type:

Peak Wavelength (nm):

820

Maximum Response Time:

.0000000005 s

Semiconductor Material:

AlGaAs

Spectral Bandwidth:

4.5 m

Sub-Category:

Laser Diodes

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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