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CQF23/D12

NXP Semiconductors

CQF23/D12 by NXP Semiconductors

CQF23/D12 by NXP Semiconductors is a high-performance laser diode with a peak wavelength of 790 nm and a max forward current of 0.07 A. It operates efficiently b/w -10 °C to 60 °C, making it ideal for various optoelectronic applications. With an ultra-fast response time of 0.5 ns, it's perfect for precision tasks in communication systems.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Digiode

USA . 1,530 parts In-Stock

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Vyrian

USA . 1,288 parts In-Stock

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Anansix

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Northwest PG Solutions

USA . 1,273 parts In-Stock

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One Stop Electronics

USA . 407 parts In-Stock

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Corphita

USA . 3,967 parts In-Stock

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UNI Independent Distributors

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Native Components

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Overview

Unlock the power of precision with the CQF23/D12 laser diode from NXP Semiconductors! Renowned for their commitment to quality, NXP delivers unmatched reliability and performance in optoelectronics. This versatile component shines in diverse applications, from telecommunications to medical devices, ensuring crisp, accurate results. Experience enhanced efficiency and longevity, making your projects not just successful but exceptional. Transform your designs today!

Feature Benefit Bullets

Maximum Forward Current: 0.07 A

This relatively low maximum forward current indicates efficient power usage, making the laser diode suitable for compact and battery-operated devices.

Peak Wavelength: 790 nm

The peak wavelength of 790 nm is ideal for applications requiring infrared light, such as optical communications and medical instrumentation.

Optoelectronic Type: LASER DIODE

As a laser diode, this product offers highly focused light output with excellent coherence, making it perfect for high-precision applications.

Maximum Operating Temperature: 60 °C

This temperature tolerance allows the laser diode to operate in environments with varying thermal conditions, enhancing its reliability in diverse applications.

Minimum Operating Temperature: -10 °C

A minimum operating temperature of -10 °C ensures that this laser diode can function effectively in cooler conditions, which is beneficial for outdoor and industrial usage.

Maximum Response Time: 0.5 ns

With a maximum response time of 0.5 ns, this laser diode supports high-speed applications, making it suitable for advanced communication technologies.

Semiconductor Material: AlGaAs

Made from AlGaAs, this laser diode exhibits excellent efficiency and temperature stability, ensuring reliable performance over time.

Spectral Bandwidth: 2 nm

A narrow spectral bandwidth of 2 nm enhances the sensitivity and resolution of applications such as spectroscopy and telecommunication, allowing for precise measurements.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mount feature simplifies integration into various circuit designs, providing mechanical stability and ease of installation.

Maximum Forward Voltage: 2.5 V

A maximum forward voltage of 2.5 V ensures compatibility with low-voltage systems, making the device energy-efficient and easier to implement in various projects.

Technical Specifications

Laser Diodes CQF23/D12 attributes and parameters. Explore more Laser Diodes devices from NXP Semiconductors

Specs

Maximum Forward Current:

.07 A

Maximum Forward Voltage:

2.5 V

Mounting Feature:

Maximum Operating Temperature:

60 Cel

Minimum Operating Temperature:

-10 Cel

Optoelectronic Type:

Peak Wavelength (nm):

790

Maximum Response Time:

.0000000005 s

Semiconductor Material:

AlGaAs

Spectral Bandwidth:

2 m

Sub-Category:

Laser Diodes

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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