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CQF25C/D12

NXP Semiconductors

CQF25C/D12 by NXP Semiconductors

CQF25C/D12 by NXP Semiconductors is a high-performance laser diode with a peak wavelength of 875 nm and a max forward current of 0.15 A. It operates b/w -10 °C to 60 °C, making it ideal for various optoelectronic applications. With an ultra-fast response time of 0.5 ns, it's perfect for precision tasks.

Median Price

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3

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1k+

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Digiode

USA . 4,759 parts In-Stock

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Vyrian

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Anansix

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One Stop Electronics

USA . 1,595 parts In-Stock

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UNI Independent Distributors

Spain . 5,576 parts In-Stock

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Corphita

USA . 3,260 parts In-Stock

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Northwest PG Solutions

USA . 2,095 parts In-Stock

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Native Components

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Overview

Light up your projects with the CQF25C/D12 laser diode from NXP Semiconductors, a leader in innovative technology. Engineered for reliability and exceptional performance, this diode excels in a variety of applications—from consumer electronics to industrial automation. With its superior quality and efficiency, you’ll benefit from fast response times and robust thermal performance, ensuring your systems operate smoothly and effectively. Illuminate your designs with confidence!

Feature Benefit Bullets

Maximum Forward Current: 0.15 A

This low maximum forward current ensures efficient power consumption, making the laser diode an energy-efficient choice for various applications.

Peak Wavelength: 875 nm

The infrared wavelength of 875 nm is ideal for applications such as industrial sensing and communication, providing optimal performance in these environments.

Optoelectronic Type: LASER DIODE

As a laser diode, this product offers coherent light output, making it suitable for high precision applications including optical data transfer and laser marking.

Maximum Operating Temperature: 60 °C

A high maximum operating temperature provides versatility, allowing the laser diode to function reliably in a variety of demanding environments.

Minimum Operating Temperature: -10 °C

The capability to operate at temperatures as low as -10 °C ensures functionality in colder climates, making it suitable for outdoor and industrial use.

Maximum Response Time: 0.5 ns

An extremely fast response time allows for high-speed applications, enabling the laser diode to support rapid modulation and precise timing in communication systems.

Semiconductor Material: AlGaAs

Utilizing AlGaAs material guarantees high efficiency and performance, resulting in a reliable and durable laser diode suitable for long-term usage.

Spectral Bandwidth: 4.5 nm

A narrow spectral bandwidth enhances the precision of applications like spectroscopy and optical sensing, ensuring accurate measurements.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mount design provides ease of installation and robust mechanical support, making integration into various systems straightforward.

Maximum Forward Voltage: 2.5 V

Low maximum forward voltage ensures that the laser diode can be powered efficiently, helping to reduce energy costs and improve system compatibility.

Technical Specifications

Laser Diodes CQF25C/D12 attributes and parameters. Explore more Laser Diodes devices from NXP Semiconductors

Specs

Maximum Forward Current:

.15 A

Maximum Forward Voltage:

2.5 V

Mounting Feature:

Maximum Operating Temperature:

60 Cel

Minimum Operating Temperature:

-10 Cel

Optoelectronic Type:

Peak Wavelength (nm):

875

Maximum Response Time:

.0000000005 s

Semiconductor Material:

AlGaAs

Spectral Bandwidth:

4.5 m

Sub-Category:

Laser Diodes

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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