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DL-LS1035

Onsemi

DL-LS1035 by Onsemi

DL-LS1035 by Onsemi is a Laser Diode with 0.11A max forward current, peak wavelength of 635nm, and 2.7V max forward voltage. Ideal for applications requiring laser diodes in temperatures ranging from -10 °C to 40°C with through hole mounting feature.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,835 parts In-Stock

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1,835

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Digiode

USA . 1,149 parts In-Stock

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1,149

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 816 parts In-Stock

1+ parts

$0.116

100+ parts

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$0.111

816

$0.116

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$0.111

Northwest PG Solutions

USA . 193 parts In-Stock

1+ parts

$0.127

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-

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$0.112

193

$0.127

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$0.112

SupplyDigital Components

Austria . 5,330 parts In-Stock

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5,330

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Kulean Microsystems

USA . 4,636 parts In-Stock

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4,636

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Problanco Electronics

Mexico . 2,735 parts In-Stock

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2,735

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TANS Electronics

Latvia . 2,703 parts In-Stock

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2,703

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Corphita

USA . 2,188 parts In-Stock

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UHIMA Technologies

Türkiye . 208 parts In-Stock

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208

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Corohmni

South Africa . 65 parts In-Stock

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Overview

Unleash the power of precision with the DL-LS1035 by Onsemi. As a leading manufacturer in the industry, Onsemi guarantees top-notch quality and reliability. This laser diode is perfect for a wide range of applications, from industrial to medical devices. With a maximum forward current of 0.11 A and peak wavelength of 635 nm, this product offers unparalleled performance. Trust in Onsemi to deliver cutting-edge technology that will elevate your projects to new heights. Experience the value and benefits of the DL-LS1035 today.

Feature Benefit Bullets

Maximum Forward Current: 0.11 A

The low forward current requirement makes this laser diode energy efficient and reduces the chance of overheating during operation.

Peak Wavelength (nm): 635

The specific wavelength of 635 nm is ideal for various applications including medical devices, telecommunications, and industrial processes.

Optoelectronic Type: LASER DIODE

Being a laser diode ensures a coherent and intense light output, making it suitable for precision applications such as laser cutting and data storage.

Maximum Operating Temperature: 40 °C

With a high maximum operating temperature, this laser diode can withstand harsh environmental conditions without losing performance or reliability.

Minimum Operating Temperature: -10 °C

The wide operating temperature range allows this laser diode to be used in both hot and cold environments without the risk of malfunctioning.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature makes it easy to securely install this laser diode on a PCB or other surface, ensuring stable operation.

Maximum Forward Voltage: 2.7 V

The low forward voltage requirement helps in reducing power consumption and heat generation, making this laser diode cost-effective and efficient.

Technical Specifications

Laser Diodes DL-LS1035 attributes and parameters. Explore more Laser Diodes devices from Onsemi

Specs

Maximum Forward Current:

.11 A

Maximum Forward Voltage:

2.7 V

Mounting Feature:

Maximum Operating Temperature:

40 Cel

Minimum Operating Temperature:

-10 Cel

Optoelectronic Type:

Peak Wavelength (nm):

635

Sub-Category:

Laser Diodes

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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