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DL-LS1018

Onsemi

DL-LS1018 by Onsemi

DL-LS1018 by Onsemi is a Laser Diode with 0.09A max forward current, peak wavelength of 675nm, and 2.6V max forward voltage. Ideal for applications requiring laser diodes in temperatures ranging from -10 °C to 60°C with through hole mounting feature.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

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1k+

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Vyrian

USA . 2,398 parts In-Stock

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Digiode

USA . 1,881 parts In-Stock

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SupplyDigital Components

Austria . 7,019 parts In-Stock

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TANS Electronics

Latvia . 4,258 parts In-Stock

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Northwest PG Solutions

USA . 2,136 parts In-Stock

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Kulean Microsystems

USA . 1,123 parts In-Stock

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Problanco Electronics

Mexico . 750 parts In-Stock

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Native Components

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Corphita

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Corohmni

South Africa . 145 parts In-Stock

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UHIMA Technologies

Türkiye . 46 parts In-Stock

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Overview

Experience the cutting-edge technology of the DL-LS1018 Laser Diode by Onsemi. Known for their top-notch quality and reliability, Onsemi delivers superior performance in all their products. The DL-LS1018 is ideal for a wide range of applications, offering precision and efficiency like no other. With a peak wavelength of 675nm and a maximum forward current of 0.09A, this laser diode provides incredible value and benefits to customers looking for high-quality optoelectronic components. Take your projects to the next level with the DL-LS1018 from Onsemi.

Feature Benefit Bullets

Maximum Forward Current: 0.09 A

The low maximum forward current helps in ensuring the longer lifespan of the laser diode by preventing overheating.

Peak Wavelength (nm): 675

The peak wavelength of 675 nm makes this laser diode suitable for applications requiring a specific wavelength of light.

Optoelectronic Type: LASER DIODE

Being a laser diode, this product offers a coherent and focused beam of light which is ideal for various optical applications.

Maximum Operating Temperature: 60 °C

The high maximum operating temperature of 60 °C ensures stability and performance in various operating conditions.

Minimum Operating Temperature: -10 °C

The low minimum operating temperature of -10 °C allows for reliable operation in colder environments.

Mounting Feature: THROUGH HOLE MOUNT

The through hole mount makes it easy to securely install and connect the laser diode, ensuring stability during operation.

Maximum Forward Voltage: 2.6 V

The low maximum forward voltage of 2.6 V helps in reducing power consumption and heat generation, making it energy-efficient.

Technical Specifications

Laser Diodes DL-LS1018 attributes and parameters. Explore more Laser Diodes devices from Onsemi

Specs

Maximum Forward Current:

.09 A

Maximum Forward Voltage:

2.6 V

Mounting Feature:

Maximum Operating Temperature:

60 Cel

Minimum Operating Temperature:

-10 Cel

Optoelectronic Type:

Peak Wavelength (nm):

675

Sub-Category:

Laser Diodes

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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