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DL-LS1060

Onsemi

DL-LS1060 by Onsemi

DL-LS1060 by Onsemi is a Laser Diode with 0.11A max forward current, peak wavelength of 658nm, and 3V max forward voltage. Ideal for applications requiring laser diodes in temperatures ranging from -10 °C to 70°C, featuring through hole mounting.

Median Price

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Lifecycle Status

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1k+

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Vyrian

USA . 2,134 parts In-Stock

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Digiode

USA . 256 parts In-Stock

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Problanco Electronics

Mexico . 4,062 parts In-Stock

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Kulean Microsystems

USA . 3,354 parts In-Stock

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TANS Electronics

Latvia . 2,177 parts In-Stock

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Corphita

USA . 2,043 parts In-Stock

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SupplyDigital Components

Austria . 1,947 parts In-Stock

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UHIMA Technologies

Türkiye . 892 parts In-Stock

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Native Components

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Northwest PG Solutions

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Corohmni

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Overview

Unleash the power of precision with the DL-LS1060 by Onsemi. This top-quality laser diode offers unparalleled performance and reliability, backed by Onsemi's reputation for excellence in manufacturing. Ideal for a wide range of applications, from industrial to medical, this laser diode delivers exceptional value with its high peak wavelength and low operating temperature. Elevate your projects to new heights with the DL-LS1060 - the perfect blend of quality and innovation.

Feature Benefit Bullets

Maximum Forward Current: 0.11 A

The low maximum forward current ensures efficient power usage and prolongs the lifespan of the laser diode.

Peak Wavelength (nm): 658

The specific peak wavelength of 658 nm makes this laser diode suitable for various applications including telecommunications and medical devices.

Optoelectronic Type: LASER DIODE

Being a laser diode, this product provides coherent and focused light output, making it ideal for precision applications such as laser cutting and engraving.

Maximum Operating Temperature: 70 °C

With a maximum operating temperature of 70 °C, this laser diode can withstand high temperatures without performance degradation, ensuring reliable operation in demanding environments.

Minimum Operating Temperature: -10 °C

The low minimum operating temperature of -10 °C allows this laser diode to function effectively even in colder conditions.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature simplifies the installation process and ensures secure placement of the laser diode in electronic circuits.

Maximum Forward Voltage: 3 V

The low maximum forward voltage requirement of 3V reduces power consumption and heat generation, making this laser diode energy-efficient.

Technical Specifications

Laser Diodes DL-LS1060 attributes and parameters. Explore more Laser Diodes devices from Onsemi

Specs

Maximum Forward Current:

.11 A

Maximum Forward Voltage:

3 V

Mounting Feature:

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-10 Cel

Optoelectronic Type:

Peak Wavelength (nm):

658

Sub-Category:

Laser Diodes

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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