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DL-LS1034

Onsemi

DL-LS1034 by Onsemi

DL-LS1034 by Onsemi is a Laser Diode with max. forward current of 0.085A, peak wavelength of 635nm, and max. operating temp of 50 °C. Ideal for applications requiring precise laser emission such as medical devices, optical communication systems, and industrial alignment equipment.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,555 parts In-Stock

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Vyrian

USA . 415 parts In-Stock

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Problanco Electronics

Mexico . 6,849 parts In-Stock

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TANS Electronics

Latvia . 6,267 parts In-Stock

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Corphita

USA . 2,242 parts In-Stock

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Northwest PG Solutions

USA . 2,204 parts In-Stock

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Kulean Microsystems

USA . 838 parts In-Stock

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Native Components

USA . 673 parts In-Stock

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UHIMA Technologies

Türkiye . 597 parts In-Stock

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SupplyDigital Components

Austria . 332 parts In-Stock

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Corohmni

South Africa . 104 parts In-Stock

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Overview

Experience top-notch quality and performance with the DL-LS1034 laser diode by Onsemi. Known for their excellence in manufacturing, Onsemi delivers cutting-edge technology that exceeds industry standards. The DL-LS1034 is versatile and can be used in a variety of applications, offering customers unmatched value and benefits. Enhance your projects with this reliable and efficient laser diode, perfect for a wide range of optoelectronic needs.

Feature Benefit Bullets

Maximum Forward Current: 0.085 A

The low forward current requirement makes this laser diode efficient and ideal for applications where power consumption needs to be minimized.

Peak Wavelength (nm): 635

635nm wavelength is commonly used for various applications such as laser pointers, barcode scanners, and medical equipment, making this laser diode versatile and widely applicable.

Optoelectronic Type: LASER DIODE

Being a laser diode, this product offers highly coherent and focused light output, making it suitable for precision applications like laser cutting or optical communication.

Maximum Operating Temperature: 50 °C

With a high maximum operating temperature, this laser diode can withstand heat better than other diodes, ensuring reliable performance even in challenging environments.

Minimum Operating Temperature: -10 °C

The low minimum operating temperature range allows this laser diode to function even in colder conditions, expanding its usability in various climates.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature provides a secure and stable installation option, ensuring the laser diode stays in place during operation and can be easily integrated into different systems.

Maximum Forward Voltage: 2.6 V

The low forward voltage requirement of 2.6 V indicates that this laser diode operates efficiently with minimal power supply, making it cost-effective and energy-efficient.

Technical Specifications

Laser Diodes DL-LS1034 attributes and parameters. Explore more Laser Diodes devices from Onsemi

Specs

Maximum Forward Current:

.085 A

Maximum Forward Voltage:

2.6 V

Mounting Feature:

Maximum Operating Temperature:

50 Cel

Minimum Operating Temperature:

-10 Cel

Optoelectronic Type:

Peak Wavelength (nm):

635

Sub-Category:

Laser Diodes

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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