Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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DL-3147-021 by Onsemi is a 660nm LASER DIODE with AlGaInP material. It operates b/w -10 °C to 40°C, suitable for THROUGH HOLE MOUNT applications. This diode offers precise peak wavelength emission for various optoelectronic uses.
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Vyrian
Native Components
$5.550
TANS Electronics
Kulean Microsystems
Problanco Electronics
SupplyDigital Components
Corphita
Northwest PG Solutions
$5.439
UHIMA Technologies
Corohmni
The specific peak wavelength of 660nm allows for precise targeting and accuracy in various applications, making it a reliable choice for laser diode technology.
Being a laser diode ensures efficient and focused light output, making it suitable for a wide range of optical and communication applications.
The high maximum operating temperature of 40 °C allows for stable performance even in challenging environmental conditions, increasing the reliability and longevity of the product.
The low minimum operating temperature of -10 °C ensures that the laser diode can function effectively in colder environments, giving it versatility in various usage scenarios.
The use of AlGaInP semiconductor material in the diode enhances its efficiency and power output, providing consistent and high-performance results in applications that require precision and reliability.
The through-hole mounting feature simplifies the installation process and ensures secure placement of the laser diode, facilitating ease of use and maintenance in different systems and setups.
Laser Diodes DL-3147-021 attributes and parameters. Explore more Laser Diodes devices from Onsemi
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Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).
President, CEO
Hassane El-Khoury
Executive VP, CFO, Treasurer
Thad Trent
Senior VP
Ross F. Jatou
Aizu Fab
Fabrication
Fab Initiation
1995
Japan
Aizu Wakamatsu
Wafer Capacity
52,000
Si/EPI Fab
2018
Czech Republic
Rožnov pod Radhoštěm
10,000
Expansion Phase 1 for SiC / EPI
2019
14,500
Expansion Phase 2 for SiC / EPI
2024
SiC Fab
2022
USA
Hudson
Bucheon
2013
South Korea
61,000
ISMF - Malaysia
1990
Malaysia
Seremban
95,000
Roznov Device Fab
1987
80,000
Fab 10
2002
East Fishkill
15,000
Burlington
1986
Canada
Gresham
1998
45,000
Bucheon 150mm
2000
50,000
Rochester
1983
Nampa
Pennsylvania
1997
Mountain Top
36,000
1N4148WT
Formosa Microsemi
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BSS138
Micro Commercial Components
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Package Shape: RECTANGULAR; Terminal Position: DUAL;
MBR0540T1G
Onsemi
MBR0540T1G by Onsemi is a Schottky rectifier diode with max. forward voltage of 0.62V and max. output current of 0.5A, ideal for applications requiring high efficiency power conversion in small outline packages. Operating temp range: -55 to 150°C, with peak reflow temp at 260°C, making it suitable for various electronic devices needing reliable rectification performance in compact designs.
2N2222A
Vishay Sprague
NPN; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; JEDEC-95 Code: TO-18; Maximum Collector-Emitter Voltage: 40 V;
C1206C104M5RACTU
KEMET Corporation
KEMET C1206C104M5RACTU is a ceramic capacitor with 0.1uF capacitance and 50V rated DC voltage. It has X7R temperature characteristics, -55 to 125°C operating range, and ±20% tolerance. Ideal for surface mount applications in electronics requiring stable capacitance across temperatures.
Micro Electronics
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
Eic Semiconductor
MMBT3906LT1G
MMBT3906LT1G by Onsemi is a PNP BJT with VCEsat of 0.4V, hFE of 30, and fT of 250MHz. Ideal for small signal applications in electronics due to its low power dissipation, high transition frequency, and compact SOT-23 package. Suitable for use in temperature-sensitive environments with an operating range from -65°C to 150°C.
2N7002
Taitron Components
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Minimum DS Breakdown Voltage: 60 V; Package Shape: RECTANGULAR;
1N4148
Semitronics
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
43025-0400
Molex
The Molex 43025-0400 is a board connector with 4 contacts, 2 rows, and a mating contact pitch of 0.118". It has a body length of 0.27", insulation resistance of 1Gohm, and operates b/w -40 to 105°C. Ideal for commercial applications requiring a female connector with crimp termination and UL94V-0 flammability rating.
Jiangsu Changjiang Electronics Technology
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Maximum Drain Current (ID): .22 A; Package Shape: RECTANGULAR;
CRCW06031K00FKEAHP
Vishay Intertechnology
Vishay Intertechnology's CRCW06031K00FKEAHP is a fixed resistor with 1000 ohm resistance, 1% tolerance, and 0.33 W power dissipation. Ideal for surface mount applications in automotive electronics due to AEC-Q200 standard compliance and operating voltage of 75 V.
BAV99
Toshiba
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
ERJ6ENF10R0V
Panasonic
Panasonic ERJ6ENF10R0V is a 10 ohm fixed resistor with 1% tolerance, suitable for surface mount applications. With a rated power dissipation of 0.125W and operating voltage of 150V, it operates b/w -55°C to 155°C. Its metal glaze/thick film technology ensures stable performance in various electronic circuits.
Temic Semiconductors
ERJ2RKF1002X
Panasonic's ERJ2RKF1002X is a fixed resistor with 10000 ohm resistance, 1% tolerance, and 0.1 W power dissipation. Ideal for surface mount applications in automotive electronics due to AEC-Q200 compliance and operating temperature range of -55 to 155 °C.
Zetex Plc
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Peak Reflow Temperature (C): 260; Package Shape: RECTANGULAR;
1N4148W-7-F
Multicomp Pro
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
National Semiconductor
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .5 A;
SDL5030-101
SDL5030-101 by Onsemi is a GaAlAs LASER DIODE with peak wavelength of 790nm. It operates b/w -10 °C to 50°C, featuring THROUGH HOLE MOUNT. Ideal for applications requiring precise laser emission in optoelectronics and telecommunications.
CQF25C/D42
NXP Semiconductors
CQF25C/D42 by NXP Semiconductors is a high-performance laser diode with a peak wavelength of 875 nm and a max forward current of 0.15 A. It operates b/w -10 °C to 60 °C, making it ideal for various optoelectronic applications. With an ultra-fast response time of 0.5 ns, it's perfect for precision tasks.
NX8570SC766-BA
Renesas Electronics
LASER DIODE; Maximum Operating Temperature: 70 Cel; Peak Wavelength (nm): 1577; Maximum Forward Current: .3 A; Semiconductor Material: InGaAsP; Maximum Forward Voltage: 2.5 V;
TOLD9151MB
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .11 A; Maximum Operating Temperature: 60 Cel; Peak Wavelength (nm): 685; Semiconductor Material: InGaAlP;
NX8570SA654-BA
LASER DIODE; Maximum Forward Voltage: 2.5 V; Semiconductor Material: InGaAsP; Peak Wavelength (nm): 1565; Maximum Operating Temperature: 70 Cel; Minimum Operating Temperature: -5 Cel;
NDL3233SF
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Voltage: 2.7 V; Maximum Forward Current: .02 A; Maximum Operating Temperature: 70 Cel; Peak Wavelength (nm): 685;
DL3038-021
DL3038-021 by Onsemi is a 640nm LASER DIODE with AlGaInP material. It operates b/w -10 °C to 40°C, featuring THROUGH HOLE MOUNT. Ideal for applications requiring precise laser emission in optoelectronics and telecommunications.
TOLD321CCA
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 1310; Maximum Forward Voltage: 2 V; Maximum Response Time: .000000001 s; Minimum Operating Temperature: -30 Cel;
NX8563LB405-BA
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Voltage: 1.5 V; Semiconductor Material: InGaAs; Maximum Operating Temperature: 65 Cel; Peak Wavelength (nm): 1540;
54-00164
Viavi Solutions
Viavi Solutions' 54-00164 Laser Diode operates at peak wavelength of 830nm with spectral bandwidth of 3m. It can withstand temperatures from -20 to 50°C, making it suitable for through hole mounting applications in various industries.
TOLD80D
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Forward Current: .15 A; Maximum Operating Temperature: 60 Cel; Spectral Bandwidth: 3 m;
LASERDIODESPL-PL90A
Infineon Technologies
LASER DIODE;
CQF23/D14
CQF23/D14 by NXP Semiconductors is a high-performance laser diode with a peak wavelength of 790 nm and a max forward current of 0.07 A. It operates efficiently b/w -10 °C to 60 °C, making it ideal for various optoelectronic applications. With an ultra-fast response time of 0.5 ns, it's perfect for precision tasks in communication systems.
NX8570SC984D-BA
LASER DIODE; Minimum Operating Temperature: -5 Cel; Peak Wavelength (nm): 1598; Maximum Operating Temperature: 70 Cel; Maximum Forward Current: .3 A; Maximum Forward Voltage: 2.5 V;
TOLD300S
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: 15 Cel; Peak Wavelength (nm): 1310; Maximum Forward Current: .15 A; Maximum Forward Voltage: 1.5 V;
NX8570SC433-BA-AZ
LASER DIODE; Peak Wavelength (nm): 1543; Maximum Forward Current: .3 A; Semiconductor Material: InGaAsP; Maximum Forward Voltage: 2.5 V; Maximum Operating Temperature: 70 Cel;
NX8570SC6031-BA
LASER DIODE; Peak Wavelength (nm): 1603; Semiconductor Material: InGaAsP; Maximum Forward Current: .3 A; Maximum Forward Voltage: 2.5 V; Minimum Operating Temperature: -5 Cel;
NX8570SC397-BA-AZ
LASER DIODE; Maximum Forward Voltage: 2.5 V; Semiconductor Material: InGaAsP; Peak Wavelength (nm): 1539; Maximum Operating Temperature: 70 Cel; Minimum Operating Temperature: -5 Cel;
TOLD80E
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Spectral Bandwidth: 3 m; Semiconductor Material: InGaAs; Minimum Operating Temperature: 0 Cel;
NX8570SC807-BA-A
LASER DIODE; Semiconductor Material: InGaAsP; Maximum Forward Voltage: 2.5 V; Maximum Forward Current: .3 A; Minimum Operating Temperature: -5 Cel; Peak Wavelength (nm): 1580;
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DL-3148-023
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .025 A; Maximum Operating Temperature: 40 Cel; Peak Wavelength (nm): 635; Minimum Operating Temperature: -10 Cel;
DL3147-161
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 70 Cel; Minimum Operating Temperature: -10 Cel; Semiconductor Material: AlGaInP; Peak Wavelength (nm): 660;
DL-3147-031
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Voltage: 2.6 V; Maximum Operating Temperature: 50 Cel; Peak Wavelength (nm): 650; Minimum Operating Temperature: -10 Cel;
DL-3148-013
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .06 A; Maximum Operating Temperature: 40 Cel; Minimum Operating Temperature: -10 Cel; Maximum Forward Voltage: 2.5 V;
DL-3147-241
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -10 Cel; Semiconductor Material: AlGaInP; Peak Wavelength (nm): 655; Maximum Operating Temperature: 60 Cel;
DL-3147-085
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Voltage: 2.6 V; Peak Wavelength (nm): 650; Maximum Operating Temperature: 80 Cel; Maximum Forward Current: .05 A;
DL-3148-023A
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .045 A; Minimum Operating Temperature: -10 Cel; Maximum Operating Temperature: 40 Cel; Maximum Forward Voltage: 2.4 V;
DL3144-005
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .055 A; Maximum Operating Temperature: 60 Cel; Peak Wavelength (nm): 780; Minimum Operating Temperature: -10 Cel;
DL-3147-185
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .05 A; Maximum Forward Voltage: 2.6 V; Maximum Operating Temperature: 80 Cel; Minimum Operating Temperature: -10 Cel;
DL-3147-041
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -10 Cel; Peak Wavelength (nm): 655; Maximum Operating Temperature: 60 Cel; Semiconductor Material: AlGaInP;
DL3148-011
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 635; Maximum Operating Temperature: 40 Cel; Maximum Forward Current: .055 A; Minimum Operating Temperature: -10 Cel;
DL3147-261
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 70 Cel; Peak Wavelength (nm): 660; Minimum Operating Temperature: -10 Cel; Semiconductor Material: AlGaInP;
DL-3147-065
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .05 A; Minimum Operating Temperature: -10 Cel; Peak Wavelength (nm): 650; Maximum Operating Temperature: 70 Cel;
DL-3148-021
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 40 Cel; Peak Wavelength (nm): 640; Semiconductor Material: AlGaInP; Minimum Operating Temperature: -10 Cel;
DL-3147-141
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -10 Cel; Peak Wavelength (nm): 655; Semiconductor Material: AlGaInP; Maximum Operating Temperature: 60 Cel;
DL3144-001
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 60 Cel; Peak Wavelength (nm): 780; Maximum Forward Current: .05 A; Minimum Operating Temperature: -10 Cel;
DL-3144-008S
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .055 A; Maximum Operating Temperature: 60 Cel; Semiconductor Material: GaAs; Minimum Operating Temperature: -10 Cel;
DL-3147-060
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -10 Cel; Maximum Forward Current: .045 A; Maximum Forward Voltage: 2.6 V; Maximum Operating Temperature: 70 Cel;
DL-3147-285
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -10 Cel; Maximum Forward Current: .05 A; Maximum Operating Temperature: 80 Cel; Maximum Forward Voltage: 2.6 V;
DL-3147-021
Sanyo Electric
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; No. of Functions: 1; Nominal Output Power: 5 W; Semiconductor Material: AlGaInP; Maximum Operating Temperature: 40 Cel;
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