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DL-3150-107

Onsemi

DL-3150-107 by Onsemi

DL-3150-107 by Onsemi is a LASER DIODE with peak wavelength of 790nm. It has max forward current of 0.06A and max operating temp of 60 °C. Ideal for applications requiring precise laser emission in through hole mounting setups.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,347 parts In-Stock

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Digiode

USA . 1,807 parts In-Stock

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Native Components

USA . 494 parts In-Stock

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$1.929

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494

$1.929

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Northwest PG Solutions

USA . 1,009 parts In-Stock

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$2.122

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$2.122

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SupplyDigital Components

Austria . 8,190 parts In-Stock

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TANS Electronics

Latvia . 4,590 parts In-Stock

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Kulean Microsystems

USA . 4,420 parts In-Stock

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Problanco Electronics

Mexico . 3,639 parts In-Stock

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UHIMA Technologies

Türkiye . 860 parts In-Stock

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Corphita

USA . 432 parts In-Stock

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Corohmni

South Africa . 96 parts In-Stock

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Overview

Experience the cutting-edge technology of the DL-3150-107 Laser Diode by Onsemi, a leading manufacturer known for its high-quality components. This innovative product offers incredible precision and reliability, making it ideal for a wide range of applications in fields such as telecommunications, medical devices, and industrial equipment. With a maximum forward current of 0.06 A and peak wavelength of 790 nm, this laser diode provides exceptional performance under various operating conditions. Trust Onsemi to deliver top-notch products that exceed expectations and provide unparalleled value to customers.

Feature Benefit Bullets

Maximum Forward Current: 0.06 A

The low maximum forward current ensures efficient power usage and helps extend the lifespan of the laser diode, making it a reliable choice for long-term use.

Peak Wavelength (nm): 790

The specific peak wavelength of 790 nm makes this laser diode suitable for various applications such as telecommunications, medical devices, and industrial processes.

Optoelectronic Type: LASER DIODE

Being a laser diode, this product offers precise and focused light output, making it ideal for applications that require high accuracy and control.

Maximum Operating Temperature: 60 °C

With a maximum operating temperature of 60 °C, this laser diode can be used in a wide range of environments without risking overheating or performance degradation.

Minimum Operating Temperature: -10 °C

The low minimum operating temperature of -10 °C ensures that this laser diode can also function in colder conditions, providing versatility in various operating environments.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature simplifies the installation and integration of the laser diode into different systems, offering ease of use and flexibility in application design.

Maximum Forward Voltage: 2.3 V

The low maximum forward voltage requirement of 2.3 volts ensures energy-efficient operation and compatibility with a variety of power sources, making this laser diode a cost-effective choice.

Technical Specifications

Laser Diodes DL-3150-107 attributes and parameters. Explore more Laser Diodes devices from Onsemi

Specs

Maximum Forward Current:

.06 A

Maximum Forward Voltage:

2.3 V

Mounting Feature:

Maximum Operating Temperature:

60 Cel

Minimum Operating Temperature:

-10 Cel

Optoelectronic Type:

Peak Wavelength (nm):

790

Sub-Category:

Laser Diodes

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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