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DL3144-001

Onsemi

DL3144-001 by Onsemi

DL3144-001 by Onsemi is a LASER DIODE with 780nm Peak Wavelength, 0.05A Max Forward Current, and -10 to 60 °C Operating Temperature. Ideal for applications requiring THROUGH HOLE MOUNT optoelectronics.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,491 parts In-Stock

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Digiode

USA . 921 parts In-Stock

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Distributors (Availability)

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Native Components

USA . 291 parts In-Stock

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$0.060

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$0.058

291

$0.060

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$0.058

SupplyDigital Components

Austria . 7,688 parts In-Stock

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Problanco Electronics

Mexico . 7,296 parts In-Stock

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TANS Electronics

Latvia . 7,053 parts In-Stock

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Northwest PG Solutions

USA . 2,309 parts In-Stock

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Kulean Microsystems

USA . 1,976 parts In-Stock

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Corphita

USA . 935 parts In-Stock

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Corohmni

South Africa . 124 parts In-Stock

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UHIMA Technologies

Türkiye . 94 parts In-Stock

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Overview

Unleash the power of cutting-edge technology with the DL3144-001 by Onsemi. Manufactured by industry leaders, this laser diode offers unparalleled quality and reliability for a wide range of applications. From precision cutting to data storage, this product delivers exceptional performance and efficiency. Experience the value of superior design and craftsmanship with the DL3144-001, and take your projects to the next level with ease.

Feature Benefit Bullets

Maximum Forward Current: 0.05 A

The low current requirement means that this laser diode is energy-efficient and contributes to longer operational life.

Peak Wavelength (nm): 780

The 780nm wavelength is commonly used in various applications such as fiber optics, laser therapy, and barcode scanning, making this laser diode versatile.

Optoelectronic Type: LASER DIODE

Being a laser diode, this product offers high coherence and monochromatic light output, making it suitable for precision applications like telecommunications and sensing.

Maximum Operating Temperature: 60 °C

With a high operating temperature limit, this laser diode can withstand demanding environments without compromising performance.

Minimum Operating Temperature: -10 °C

The wide operating temperature range ensures that this laser diode can function reliably in both extreme cold and hot conditions.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature simplifies the installation process and provides a secure and stable connection for the laser diode.

Technical Specifications

Laser Diodes DL3144-001 attributes and parameters. Explore more Laser Diodes devices from Onsemi

Specs

Maximum Forward Current:

.05 A

Mounting Feature:

Maximum Operating Temperature:

60 Cel

Minimum Operating Temperature:

-10 Cel

Optoelectronic Type:

Peak Wavelength (nm):

780

Sub-Category:

Laser Diodes

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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