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DL3147-161

Onsemi

DL3147-161 by Onsemi

DL3147-161 by Onsemi is a 660nm LASER DIODE with AlGaInP material. It operates b/w -10 °C to 70°C, suitable for THROUGH HOLE MOUNT applications like laser pointers and medical devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,511 parts In-Stock

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Digiode

USA . 1,267 parts In-Stock

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Distributors (Availability)

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Native Components

USA . 278 parts In-Stock

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$0.144

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$0.138

278

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$0.138

Northwest PG Solutions

USA . 178 parts In-Stock

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$0.158

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$0.139

178

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$0.139

Kulean Microsystems

USA . 6,132 parts In-Stock

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TANS Electronics

Latvia . 5,581 parts In-Stock

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SupplyDigital Components

Austria . 3,797 parts In-Stock

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UHIMA Technologies

Türkiye . 770 parts In-Stock

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770

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Problanco Electronics

Mexico . 537 parts In-Stock

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Corphita

USA . 495 parts In-Stock

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Corohmni

South Africa . 175 parts In-Stock

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Overview

Elevate your projects with the DL3147-161 Laser Diode by Onsemi, a top-quality component that promises reliability and precision. Manufactured by industry leader Onsemi, this laser diode offers unparalleled performance and durability for a wide range of applications. From medical equipment to industrial machinery, this versatile diode delivers exceptional value and benefits to customers seeking cutting-edge technology. Trust Onsemi's expertise and choose the DL3147-161 for all your laser diode needs.

Feature Benefit Bullets

Peak Wavelength (nm): 660

The specific peak wavelength of 660nm makes this laser diode suitable for applications requiring a specific wavelength range, such as medical devices or precision instruments.

Optoelectronic Type: LASER DIODE

Being a laser diode, this product provides highly coherent and focused light output, making it ideal for applications like laser cutting, printing, or data communication systems.

Maximum Operating Temperature: 70 °C

With a maximum operating temperature of 70 °C, this laser diode can withstand higher temperatures, ensuring reliable performance in various environmental conditions.

Minimum Operating Temperature: -10 °C

The ability to operate at temperatures as low as -10 °C makes this laser diode suitable for use in cold environments or applications where temperature control is crucial.

Semiconductor Material: AlGaInP

The use of AlGaInP as the semiconductor material in this laser diode offers high efficiency and reliability, making it a durable and cost-effective choice for long-term use.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature simplifies the installation process and provides mechanical stability, ensuring secure placement of the laser diode in various devices and systems.

Technical Specifications

Laser Diodes DL3147-161 attributes and parameters. Explore more Laser Diodes devices from Onsemi

Specs

Mounting Feature:

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-10 Cel

Optoelectronic Type:

Peak Wavelength (nm):

660

Semiconductor Material:

AlGaInP

Sub-Category:

Laser Diodes

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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