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DL-3147-060

Onsemi

DL-3147-060 by Onsemi

DL-3147-060 by Onsemi is a Laser Diode with 0.045A max forward current, emitting at 650nm peak wavelength. It operates b/w -10 °C to 70°C, with a max forward voltage of 2.6V. Ideal for applications requiring precise laser technology in various industries.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 1,430 parts In-Stock

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Digiode

USA . 591 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 99 parts In-Stock

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Native Components

USA . 761 parts In-Stock

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$0.127

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$0.122

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Northwest PG Solutions

USA . 504 parts In-Stock

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$0.139

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Kulean Microsystems

USA . 4,309 parts In-Stock

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SupplyDigital Components

Austria . 3,459 parts In-Stock

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Corphita

USA . 2,226 parts In-Stock

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Problanco Electronics

Mexico . 946 parts In-Stock

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TANS Electronics

Latvia . 813 parts In-Stock

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Corohmni

South Africa . 200 parts In-Stock

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UHIMA Technologies

Türkiye . 149 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 99 parts In-Stock

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Glotronic Ltd.

UK . 79 parts In-Stock

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Overview

Experience the innovation and quality of Onsemi with the DL-3147-060 laser diode. Perfect for a wide range of applications, this laser diode offers unparalleled performance and reliability. With a peak wavelength of 650nm and a maximum forward current of 0.045 A, this product provides exceptional value and benefits to customers looking for cutting-edge technology. Trust in Onsemi to deliver top-of-the-line laser diodes for all your optical needs.

Feature Benefit Bullets

Maximum Forward Current: 0.045 A

Low forward current helps in efficient energy usage, increasing the overall lifespan of the laser diode.

Peak Wavelength (nm): 650

The specific peak wavelength of 650 nm makes this laser diode suitable for certain applications where this wavelength is required.

Optoelectronic Type: LASER DIODE

Being a laser diode, it provides precise and focused beam of light making it ideal for various optical applications.

Maximum Operating Temperature: 70 °C

High maximum operating temperature allows for this laser diode to function in various environments without overheating.

Minimum Operating Temperature: -10 °C

Wide range of operating temperatures ensures this laser diode can be used in both hot and cold conditions without any issues.

Mounting Feature: THROUGH HOLE MOUNT

The through hole mounting feature simplifies the installation process and provides a secure mounting for the laser diode.

Maximum Forward Voltage: 2.6 V

Low forward voltage requirement reduces power consumption and heat generation, contributing to the efficiency of the overall system.

Technical Specifications

Laser Diodes DL-3147-060 attributes and parameters. Explore more Laser Diodes devices from Onsemi

Specs

Maximum Forward Current:

.045 A

Maximum Forward Voltage:

2.6 V

Mounting Feature:

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-10 Cel

Optoelectronic Type:

Peak Wavelength (nm):

650

Sub-Category:

Laser Diodes

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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