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DL-3148-235

Onsemi

DL-3148-235 by Onsemi

DL-3148-235 by Onsemi is a Laser Diode with 0.045A max forward current, peak wavelength of 635nm, and 2.4V max forward voltage. Ideal for applications requiring laser diodes in temperatures ranging from -10 °C to 50°C with through hole mounting feature.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,370 parts In-Stock

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Vyrian

USA . 727 parts In-Stock

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Native Components

USA . 378 parts In-Stock

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$0.048

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$0.046

378

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$0.046

Problanco Electronics

Mexico . 3,221 parts In-Stock

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SupplyDigital Components

Austria . 2,794 parts In-Stock

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Corphita

USA . 2,129 parts In-Stock

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TANS Electronics

Latvia . 1,453 parts In-Stock

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UHIMA Technologies

Türkiye . 789 parts In-Stock

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Corohmni

South Africa . 495 parts In-Stock

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Northwest PG Solutions

USA . 387 parts In-Stock

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Kulean Microsystems

USA . 145 parts In-Stock

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Overview

Elevate your projects with the DL-3148-235 Laser Diode by Onsemi. Known for their exceptional quality and reliability, Onsemi has crafted a cutting-edge diode that offers peak performance in a range of applications. From industrial laser systems to medical equipment, this diode delivers precision and efficiency. With a maximum forward current of 0.045 A and a peak wavelength of 635 nm, the DL-3148-235 guarantees optimal results. Trust Onsemi to provide top-notch products that exceed expectations and take your projects to the next level.

Feature Benefit Bullets

Maximum Forward Current: 0.045 A

The low forward current consumption of this laser diode allows for efficient use of power, making it cost-effective and energy-efficient.

Peak Wavelength (nm): 635

The specific peak wavelength of 635 nm is ideal for various applications such as laser pointers, laser light shows, and medical equipment.

Optoelectronic Type: LASER DIODE

Being a laser diode, this product offers precise and focused light output, making it suitable for applications that require high accuracy and control.

Maximum Operating Temperature: 50 °C

With a maximum operating temperature of 50 °C, this laser diode can be used in environments that may have elevated temperatures, ensuring reliability under varying conditions.

Minimum Operating Temperature: -10 °C

The ability to operate at a minimum temperature of -10 °C enables this laser diode to be used in cold environments without compromising its performance.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature provides physical stability and easy installation of the laser diode, making it suitable for various industrial and DIY projects.

Maximum Forward Voltage: 2.4 V

The low maximum forward voltage requirement of 2.4 V ensures efficient power conversion and lower power dissipation, contributing to the overall efficiency of the laser diode.

Technical Specifications

Laser Diodes DL-3148-235 attributes and parameters. Explore more Laser Diodes devices from Onsemi

Specs

Maximum Forward Current:

.045 A

Maximum Forward Voltage:

2.4 V

Mounting Feature:

Maximum Operating Temperature:

50 Cel

Minimum Operating Temperature:

-10 Cel

Optoelectronic Type:

Peak Wavelength (nm):

635

Sub-Category:

Laser Diodes

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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