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DL-LS40

Onsemi

DL-LS40 by Onsemi

DL-LS40 by Onsemi is an 800nm LASER DIODE with AlGaInP material. It operates b/w -10 °C to 50°C, suitable for THROUGH HOLE MOUNT applications in optoelectronics.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,355 parts In-Stock

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Digiode

USA . 655 parts In-Stock

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655

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Native Components

USA . 256 parts In-Stock

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$25.520

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256

$25.520

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Northwest PG Solutions

USA . 2,186 parts In-Stock

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$28.072

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$25.265

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$28.072

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SupplyDigital Components

Austria . 8,220 parts In-Stock

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Problanco Electronics

Mexico . 6,652 parts In-Stock

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Corphita

USA . 2,462 parts In-Stock

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TANS Electronics

Latvia . 1,998 parts In-Stock

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UHIMA Technologies

Türkiye . 446 parts In-Stock

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Corohmni

South Africa . 112 parts In-Stock

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Kulean Microsystems

USA . 49 parts In-Stock

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Overview

Upgrade your laser diode experience with the DL-LS40 by Onsemi. Known for their top-quality manufacturing, Onsemi brings you a product that delivers exceptional performance and reliability. Ideal for a wide range of applications, this laser diode offers unparalleled value and benefits to customers. From cutting-edge technology to efficient operations, the DL-LS40 is the perfect choice for all your optical needs. Elevate your projects with this innovative solution today!

Feature Benefit Bullets

Peak Wavelength (nm): 800

The peak wavelength of 800nm allows for precise and efficient laser operations, making this product suitable for a wide range of applications.

Optoelectronic Type: LASER DIODE

Being a laser diode, this product offers high efficiency and reliability in generating laser beams, making it a preferred choice for various industrial and scientific uses.

Maximum Operating Temperature: 50 °C

With a maximum operating temperature of 50 °C, this laser diode can withstand high temperatures, ensuring stable performance even under demanding conditions.

Minimum Operating Temperature: -10 °C

The ability to operate at a minimum temperature of -10 °C allows this laser diode to function effectively in colder environments, expanding its usability in different settings.

Semiconductor Material: AlGaInP

The use of AlGaInP semiconductor material in this laser diode provides excellent optical properties and high reliability, guaranteeing consistent performance and long-term durability.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature simplifies the installation process of this laser diode, making it convenient to integrate into various systems and devices with ease.

Technical Specifications

Laser Diodes DL-LS40 attributes and parameters. Explore more Laser Diodes devices from Onsemi

Specs

Mounting Feature:

Maximum Operating Temperature:

50 Cel

Minimum Operating Temperature:

-10 Cel

Optoelectronic Type:

Peak Wavelength (nm):

800

Semiconductor Material:

AlGaInP

Sub-Category:

Laser Diodes

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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