Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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CQF25B/D52 by NXP Semiconductors is a high-performance laser diode with a peak wavelength of 850 nm and a max forward current of 0.15 A. It operates b/w -10 °C to 60 °C, making it ideal for various optoelectronic applications. With an ultra-fast response time of 0.5 ns, it's perfect for data communication systems.
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This low maximum forward current makes the laser diode efficient and suitable for battery-operated devices, ensuring longer operational life.
The 850 nm peak wavelength allows for optimal performance in various applications, particularly in optical communication and sensing, ensuring excellent light transmission.
As a laser diode, this product offers coherent light output, making it ideal for high-precision applications such as laser printing and optical data transfer.
With a maximum operating temperature of 60 °C, this laser diode is suitable for use in environments that may experience relatively high temperatures without compromising performance.
The -10 °C minimum operating temperature extends the diode's usability in colder environments, making it versatile for various industrial and outdoor applications.
A fast response time of 0.5 ns enables the diode to operate effectively in high-speed communication systems, ensuring quick data transfer and reliable performance.
Constructed from AlGaAs, this laser diode offers high efficiency and better thermal performance, enhancing reliability and performance in demanding applications.
A narrow spectral bandwidth of 4.5 nm enhances the diode's performance in applications requiring precise wavelength control, improving the overall quality of optical signals.
The through-hole mounting feature provides robust mechanical support and stability, making installation easier in PCB applications and enhancing reliability.
With a maximum forward voltage of 2.5 V, this diode is designed to operate efficiently with minimal power consumption, reducing thermal output and improving overall energy use.
Laser Diodes CQF25B/D52 attributes and parameters. Explore more Laser Diodes devices from NXP Semiconductors
Maximum Forward Current:
Maximum Forward Voltage:
Mounting Feature:
Maximum Operating Temperature:
Minimum Operating Temperature:
Optoelectronic Type:
Peak Wavelength (nm):
Maximum Response Time:
Semiconductor Material:
Spectral Bandwidth:
Sub-Category:
NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.
Executive Director, President, CEO
Kurt Sievers
Executive VP, CFO
Bill Betz
Executive VP, Chief Sales Officer
Ron Martino
ICN8
Fabrication
Fab Initiation
1996
Netherlands
Nijmegen
Wafer Capacity
55,000
ATMC (Austin Tech & Mfg Center)
1995
USA
Austin
30,000
N/A
1989
Germany
Boeblingen
CHD
1993
Chandler
OHTC
1991
24,000
New Expansion Fab
2026
ECHO
2020
10,000
BAV99
Surge Components
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
DS18B20Z+
Analog Devices
DS18B20Z+ by Analog Devices is a 12-bit temperature sensor with 1-Wire interface. It operates b/w -55 to 125°C, with ±0.5°C accuracy. Suitable for applications requiring digital output and surface mounting feature.
2N2222A
Allegro MicroSystems
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
ABS25-32.768KHZ-1-T
Abracon
Abracon's ABS25-32.768KHZ-1-T crystal oscillator offers 10 ppm frequency tolerance, 126% stability, and 50000 ohm series resistance. Ideal for applications requiring 0.032768 MHz nominal operating frequency, such as IoT devices and precision timing systems.
BAV99-7-F
Multicomp Pro
2N7002
Itt Semiconductor
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Shape: RECTANGULAR;
C0603C104K5RACTU
KEMET Corporation
KEMET C0603C104K5RACTU is a ceramic capacitor with 0.1uF capacitance and 50V URdc. It has X7R temperature characteristics, -55 to 125 °C operating range, and ±10% tolerance. Ideal for SMT applications requiring compact size and reliable performance in various electronic circuits.
1N4148
Vishay Intertechnology
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
MBRS3200T3G
Onsemi
MBRS3200T3G by Onsemi is a Schottky rectifier diode with a max output current of 3A and a max forward voltage of 0.59V. It operates in temperatures ranging from -65°C to 175°C, making it suitable for power applications. The diode has a peak repetitive reverse voltage of 200V and is designed for surface mount installation in electronic circuits.
4554
Jw Miller Magnetics
Other Semiconductors;
Invensys Sensor Systems
RECTIFIER DIODE; Surface Mount: NO; No. of Phases: 1; Maximum Reverse Recovery Time: .004 us; Config: SINGLE; Maximum Repetitive Peak Reverse Voltage: 100 V;
SMBJ18CA
Sensitron Semiconductor
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
M39029/58-360
Itt Cannon
CONNECTOR ACCESSORY; Alternate Contacts: 030-2042-000; DIN Conformity: NO; Contact Gender: MALE; Terminal Type: WIRE; MIL-Connector Accessory Name: CONTACT;
LM358N
Motorola
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
1N4148WT
Sangdest Microelectronics (Nanjing)
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LM2931AZ-5.0G
LM2931AZ-5.0G by Onsemi is a fixed positive single output LDO regulator with a nominal output voltage of 5V and max output current of 0.1A. It has a max dropout voltage of 0.6V, making it suitable for applications requiring stable power supply in temperature-sensitive environments up to 125°C. The package style is cylindrical with wire terminals, ideal for rail packing methods in various electronic devices.
Micro Commercial Components
Small Signal Bipolar Transistors; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; JESD-609 Code: e0;
SMMBT2222ALT1G
SMMBT2222ALT1G by Onsemi is a NPN BJT transistor with 3 terminals, 0.6A IC, and 40V VCE. It has a hFE of 75, fT of 300MHz, and operates up to 150°C. Ideal for small signal applications in automotive electronics due to AEC-Q101 compliance.
LL4148
Lite-on Semiconductor
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
U.FL-R-SMT-1(10)
Hirose Electric
U.FL-R-SMT-1(10) by Hirose Electric is a RF connector with 50 ohm impedance, 0.05 dB insertion loss, and 8 GHz operating frequency. Ideal for board mounting in commercial applications, it features gold termination finish, liquid crystal polymer insulator, and 200VAC dielectric voltage resistance.
TOLD312S
Toshiba
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 1310; Maximum Operating Temperature: 65 Cel; Maximum Forward Current: .15 A; Maximum Response Time: .0000000005 s;
TOLD80F
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Spectral Bandwidth: 3 m; Semiconductor Material: InGaAs; Peak Wavelength (nm): 1300; Maximum Operating Temperature: 60 Cel;
NX8565LE870-CC
Renesas Electronics
LASER DIODE; Mounting Feature: SURFACE MOUNT; Maximum Operating Temperature: 70 Cel; Peak Wavelength (nm): 1587; Minimum Operating Temperature: -20 Cel; Maximum Forward Current: .1 A;
TOLD9231(F)
LASER DIODE;
NX8570SC687-BA-A
LASER DIODE; Maximum Forward Voltage: 2.5 V; Maximum Forward Current: .3 A; Minimum Operating Temperature: -5 Cel; Maximum Operating Temperature: 70 Cel; Peak Wavelength (nm): 1568;
STL51704G
Infineon Technologies
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Voltage: 1.5 V; Maximum Forward Current: .12 A; Maximum Operating Temperature: 85 Cel; Spectral Bandwidth: 5 m;
NX8570SC6070D-BA
LASER DIODE; Maximum Forward Voltage: 2.5 V; Peak Wavelength (nm): 1607; Semiconductor Material: InGaAsP; Maximum Operating Temperature: 70 Cel; Maximum Forward Current: .3 A;
NX8571SC950-BA-A
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Semiconductor Material: InGaAsP; Maximum Forward Current: .3 A; Maximum Forward Voltage: 2.5 V; Minimum Operating Temperature: -5 Cel;
SFH487401
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Spectral Bandwidth: 2 m; Shape: ROUND; Nominal Output Power: 1000 W;
SDL5030-111
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -10 Cel; Maximum Operating Temperature: 50 Cel; Peak Wavelength (nm): 790;
NX6350GP29-AZ
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 1290; Maximum Response Time: .00000000005 s; Minimum Operating Temperature: -5 Cel; Semiconductor Material: InGaAs;
TOLD322CCC
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 80 Cel; Peak Wavelength (nm): 1310; Maximum Forward Current: .15 A; Minimum Operating Temperature: -30 Cel;
SPLCG85
LASER DIODE; Mounting Feature: SURFACE MOUNT; Maximum Operating Temperature: 60 Cel; Peak Wavelength (nm): 850; Size: 4.5 mm; Shape: ROUND;
TOLD320CBA
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .15 A; Maximum Operating Temperature: 70 Cel; Peak Wavelength (nm): 1310; Maximum Response Time: .000000001 s;
DL-3148-021
DL-3148-021 by Onsemi is a 640nm LASER DIODE with AlGaInP material. It operates b/w -10 °C to 40°C, featuring THROUGH HOLE MOUNT. Ideal for applications requiring precise laser emission in optoelectronics and telecommunications.
NX8570SC6057-BA-A
LASER DIODE; Maximum Forward Voltage: 2.5 V; Maximum Operating Temperature: 70 Cel; Peak Wavelength (nm): 1605; Semiconductor Material: InGaAsP; Minimum Operating Temperature: -5 Cel;
NX8571SC6070-BA-A
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -5 Cel; Maximum Forward Voltage: 2.5 V; Peak Wavelength (nm): 1607; Maximum Forward Current: .3 A;
NX6504GK-A
LASER DIODE; Terminal Finish: Tin/Bismuth (Sn/Bi); Peak Wavelength (nm): 1550; Nominal Output Power: 5 W; Shape: ROUND; JESD-609 Code: e6;
SDL3140-201
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 790; Maximum Operating Temperature: 65 Cel; Minimum Operating Temperature: -10 Cel;
SDL7032-001
SDL7032-001 by Onsemi is an 830nm LASER DIODE with GaAlAs semiconductor material. It operates b/w -10 °C to 50°C, featuring THROUGH HOLE MOUNT. Ideal for applications requiring precise laser emission in optoelectronics and telecommunications.
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CQF25B/D14
NXP Semiconductors
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Response Time: .0000000005 s; Maximum Forward Voltage: 2.5 V; Maximum Operating Temperature: 60 Cel; Spectral Bandwidth: 4.5 m;
CQF25A/D12
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Semiconductor Material: AlGaAs; Spectral Bandwidth: 4.5 m; Maximum Operating Temperature: 60 Cel; Maximum Response Time: .0000000005 s;
CQF23/D24
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Semiconductor Material: AlGaAs; Spectral Bandwidth: 2 m; Maximum Response Time: .0000000005 s; Maximum Forward Voltage: 2.5 V;
CQF25B/D12
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .15 A; Maximum Forward Voltage: 2.5 V; Spectral Bandwidth: 4.5 m; Minimum Operating Temperature: -10 Cel;
CQF25A/D14
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 60 Cel; Maximum Forward Voltage: 2.5 V; Maximum Forward Current: .15 A; Peak Wavelength (nm): 820;
CQF23/D52
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Semiconductor Material: AlGaAs; Maximum Forward Current: .07 A; Peak Wavelength (nm): 790; Maximum Forward Voltage: 2.5 V;
CQF25B/D24
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 60 Cel; Semiconductor Material: AlGaAs; Minimum Operating Temperature: -10 Cel; Maximum Forward Voltage: 2.5 V;
CQF23/D12
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Spectral Bandwidth: 2 m; Maximum Forward Voltage: 2.5 V; Maximum Operating Temperature: 60 Cel; Maximum Forward Current: .07 A;
CQF25A/D13
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Spectral Bandwidth: 4.5 m; Maximum Forward Current: .15 A; Maximum Response Time: .0000000005 s; Peak Wavelength (nm): 820;
CQF23/D41
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -10 Cel; Spectral Bandwidth: 2 m; Maximum Operating Temperature: 60 Cel; Maximum Forward Current: .07 A;
CQF25B/D11
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .15 A; Maximum Forward Voltage: 2.5 V; Peak Wavelength (nm): 850; Minimum Operating Temperature: -10 Cel;
CQF25A/D41
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -10 Cel; Maximum Response Time: .0000000005 s; Semiconductor Material: AlGaAs; Maximum Forward Current: .15 A;
CQF23/D44
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Semiconductor Material: AlGaAs; Peak Wavelength (nm): 790; Maximum Forward Voltage: 2.5 V; Maximum Response Time: .0000000005 s;
CQF25B/D13
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Response Time: .0000000005 s; Maximum Forward Voltage: 2.5 V; Spectral Bandwidth: 4.5 m; Minimum Operating Temperature: -10 Cel;
CQF23/D14
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 60 Cel; Spectral Bandwidth: 2 m; Maximum Forward Voltage: 2.5 V; Maximum Forward Current: .07 A;
CQF25A/D11
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .15 A; Maximum Response Time: .0000000005 s; Maximum Forward Voltage: 2.5 V; Maximum Operating Temperature: 60 Cel;
CQF23/D11
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Semiconductor Material: AlGaAs; Peak Wavelength (nm): 790; Minimum Operating Temperature: -10 Cel; Maximum Forward Voltage: 2.5 V;
CQF23/D13
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Response Time: .0000000005 s; Spectral Bandwidth: 2 m; Peak Wavelength (nm): 790; Minimum Operating Temperature: -10 Cel;
CQF23/D43
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Semiconductor Material: AlGaAs; Maximum Operating Temperature: 60 Cel; Spectral Bandwidth: 2 m; Maximum Response Time: .0000000005 s;
CQF25A/D52
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Spectral Bandwidth: 4.5 m; Semiconductor Material: AlGaAs; Minimum Operating Temperature: -10 Cel; Maximum Forward Current: .15 A;
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