Loading...

SDL4030-101

Onsemi

SDL4030-101 by Onsemi

SDL4030-101 by Onsemi is an 805nm LASER DIODE with GaAlAs material. It operates b/w -10 °C to 50°C, suitable for THROUGH HOLE MOUNT applications in optoelectronics.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,956 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,956

-

-

-

-

Digiode

USA . 1,070 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,070

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Problanco Electronics

Mexico . 8,279 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8,279

-

-

-

-

Kulean Microsystems

USA . 7,412 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,412

-

-

-

-

TANS Electronics

Latvia . 5,895 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,895

-

-

-

-

SupplyDigital Components

Austria . 2,285 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,285

-

-

-

-

Corphita

USA . 1,772 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,772

-

-

-

-

UHIMA Technologies

Türkiye . 249 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

249

-

-

-

-

Corohmni

South Africa . 203 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

203

-

-

-

-

Overview

Unleash the power of cutting-edge technology with the SDL4030-101 Laser Diode by Onsemi. Crafted with precision and expertise, this high-quality diode offers unparalleled performance and reliability. From industrial applications to medical devices, this versatile component is designed to exceed expectations in a wide range of industries. Experience the value and benefits of superior engineering with the SDL4030-101, where innovation meets excellence.

Feature Benefit Bullets

Peak Wavelength (nm): 805

This specific wavelength makes this laser diode suitable for a wide range of applications, including communication, medical equipment, and industrial processes.

Optoelectronic Type: LASER DIODE

Being a laser diode, this product offers high efficiency, compact size, and precise control over output power, making it ideal for various laser applications.

Maximum Operating Temperature: 50 °C

With a high maximum operating temperature, this laser diode can withstand intense heat environments without compromising its performance or reliability.

Minimum Operating Temperature: -10 °C

The low minimum operating temperature ensures that this laser diode can operate effectively even in cold conditions, making it suitable for a diverse range of operating environments.

Semiconductor Material: GaAlAs

GaAlAs is a well-established semiconductor material known for its high efficiency and reliability, ensuring that this laser diode delivers consistent performance over its lifespan.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature provides secure and stable installation of the laser diode onto PCBs or other surfaces, facilitating easy integration into various electronic systems.

Technical Specifications

Laser Diodes SDL4030-101 attributes and parameters. Explore more Laser Diodes devices from Onsemi

Specs

Mounting Feature:

Maximum Operating Temperature:

50 Cel

Minimum Operating Temperature:

-10 Cel

Optoelectronic Type:

Peak Wavelength (nm):

805

Semiconductor Material:

GaAlAs

Sub-Category:

Laser Diodes

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 19