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DL-3148-037

Onsemi

DL-3148-037 by Onsemi

DL-3148-037 by Onsemi is a LASER DIODE with Peak Wavelength of 635nm, Max Forward Current of 0.05A, and Max Forward Voltage of 2.5V. It operates b/w -10 °C to 50°C, suitable for THROUGH HOLE MOUNT applications in various industries.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,167 parts In-Stock

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Digiode

USA . 275 parts In-Stock

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ComSIT Distribution GmbH

Germany . 14 parts In-Stock

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ComSIT USA

USA . 14 parts In-Stock

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Distributors (Availability)

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Native Components

USA . 706 parts In-Stock

1+ parts

$0.817

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706

$0.817

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Northwest PG Solutions

USA . 37 parts In-Stock

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$0.898

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37

$0.898

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TANS Electronics

Latvia . 4,700 parts In-Stock

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4,700

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SupplyDigital Components

Austria . 4,359 parts In-Stock

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Problanco Electronics

Mexico . 1,529 parts In-Stock

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Corphita

USA . 1,372 parts In-Stock

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UHIMA Technologies

Türkiye . 921 parts In-Stock

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Kulean Microsystems

USA . 377 parts In-Stock

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Corohmni

South Africa . 233 parts In-Stock

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Overview

Enhance your products with the DL-3148-037 Laser Diode from Onsemi, a trusted manufacturer known for top-quality optoelectronic components. Ideal for applications in laser technology, this impressive diode offers peak performance with a maximum forward current of 0.05 A and a peak wavelength of 635 nm. With a wide operating temperature range and easy through-hole mounting feature, this diode provides unmatched reliability and ease of use. Upgrade your projects with the DL-3148-037 and experience the superior value and benefits that Onsemi products deliver.

Feature Benefit Bullets

Maximum Forward Current: 0.05 A

Low maximum forward current ensures energy efficiency and prolongs the lifespan of the laser diode, making it a reliable choice.

Peak Wavelength (nm): 635

The specific peak wavelength of 635 nm makes this laser diode suitable for various applications such as laser pointers, laser printers, and medical equipment.

Optoelectronic Type: LASER DIODE

Being a laser diode, this product offers a coherent and focused beam of light, making it ideal for precision cutting, engraving, and sensing applications.

Maximum Operating Temperature: 50 °C

With a maximum operating temperature of 50 °C, this laser diode can withstand higher temperatures, allowing for use in a wider range of environments.

Minimum Operating Temperature: -10 °C

The low minimum operating temperature of -10 °C ensures that this laser diode can operate reliably even in cold conditions, making it versatile and suitable for various settings.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature makes it easier to securely install and position the laser diode, ensuring stable performance and alignment in different applications.

Maximum Forward Voltage: 2.5 V

The maximum forward voltage of 2.5 V indicates low power consumption and efficient energy usage, making this laser diode a cost-effective choice for long-term use.

Technical Specifications

Laser Diodes DL-3148-037 attributes and parameters. Explore more Laser Diodes devices from Onsemi

Specs

Maximum Forward Current:

.05 A

Maximum Forward Voltage:

2.5 V

Mounting Feature:

Maximum Operating Temperature:

50 Cel

Minimum Operating Temperature:

-10 Cel

Optoelectronic Type:

Peak Wavelength (nm):

635

Sub-Category:

Laser Diodes

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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