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SDL6030-201

Onsemi

SDL6030-201 by Onsemi

SDL6030-201 by Onsemi is an 800nm LASER DIODE with GaAlAs material. It operates b/w -10 °C to 50°C, featuring THROUGH HOLE MOUNT. Ideal for applications requiring precise laser emission in optoelectronics and telecommunications.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

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1k+

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Digiode

USA . 1,638 parts In-Stock

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Vyrian

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Problanco Electronics

Mexico . 3,488 parts In-Stock

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TANS Electronics

Latvia . 2,805 parts In-Stock

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Kulean Microsystems

USA . 2,422 parts In-Stock

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SupplyDigital Components

Austria . 1,044 parts In-Stock

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UHIMA Technologies

Türkiye . 921 parts In-Stock

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Corphita

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Corohmni

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Overview

Unleash the power of laser technology with the SDL6030-201 by Onsemi. As a leading manufacturer in the industry, Onsemi ensures top-notch quality and reliability in all their products. The SDL6030-201 is a high-performance laser diode with a peak wavelength of 800nm, making it ideal for a wide range of applications. From medical devices to industrial machinery, this laser diode offers precision and efficiency like no other. Experience the value and benefits of the SDL6030-201 and take your projects to the next level with Onsemi's cutting-edge technology.

Feature Benefit Bullets

Peak Wavelength (nm): 800

The 800 nm wavelength is suitable for various applications such as telecommunications, medical equipment, and scientific research.

Optoelectronic Type: LASER DIODE

Laser diodes are known for their high efficiency and compact size, making them ideal for use in a wide range of applications including barcode scanners, laser pointers, and optical communication systems.

Maximum Operating Temperature: 50 °C

The high maximum operating temperature of 50 °C ensures that the laser diode remains stable and reliable even in demanding environments.

Minimum Operating Temperature: -10 °C

The low minimum operating temperature of -10 °C allows the laser diode to function effectively in cold conditions without compromising performance.

Semiconductor Material: GaAlAs

Gallium Aluminum Arsenide (GaAlAs) is a popular semiconductor material for laser diodes due to its high efficiency, reliability, and durability.

Mounting Feature: THROUGH HOLE MOUNT

The through hole mounting feature makes it easy to securely install the laser diode onto a circuit board, ensuring stable operation and alignment.

Technical Specifications

Laser Diodes SDL6030-201 attributes and parameters. Explore more Laser Diodes devices from Onsemi

Specs

Mounting Feature:

Maximum Operating Temperature:

50 Cel

Minimum Operating Temperature:

-10 Cel

Optoelectronic Type:

Peak Wavelength (nm):

800

Semiconductor Material:

GaAlAs

Sub-Category:

Laser Diodes

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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