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SDL6030-101

Onsemi

SDL6030-101 by Onsemi

SDL6030-101 by Onsemi is a GaAlAs LASER DIODE with peak wavelength of 790nm. It operates b/w -10 °C to 50°C, featuring THROUGH HOLE MOUNT. Ideal for applications requiring precise optical emission in optoelectronics and telecommunications.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,027 parts In-Stock

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Digiode

USA . 115 parts In-Stock

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TANS Electronics

Latvia . 8,209 parts In-Stock

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Kulean Microsystems

USA . 7,389 parts In-Stock

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Problanco Electronics

Mexico . 2,364 parts In-Stock

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Corphita

USA . 1,242 parts In-Stock

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UHIMA Technologies

Türkiye . 711 parts In-Stock

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SupplyDigital Components

Austria . 271 parts In-Stock

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Corohmni

South Africa . 144 parts In-Stock

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Overview

Experience unmatched quality and reliability with the SDL6030-101 by Onsemi, a leading manufacturer in the field of laser diodes. These high-performance diodes offer peak wavelength of 790nm, making them perfect for a wide range of applications. From medical devices to industrial equipment, the SDL6030-101 delivers exceptional value and benefits to customers by providing precise and efficient laser performance. Trust Onsemi to provide you with cutting-edge technology that meets all your needs, setting new standards in the industry.

Feature Benefit Bullets

Peak Wavelength (nm): 790

Having a peak wavelength of 790nm makes this laser diode suitable for applications requiring a specific wavelength of light, providing precise and consistent results.

Optoelectronic Type: LASER DIODE

The optoelectronic type being a laser diode ensures high efficiency and accuracy in emitting light, making it a reliable choice for various optical applications.

Maximum Operating Temperature: 50 °C

With a maximum operating temperature of 50 °C, this laser diode can withstand high temperatures without compromising its performance, ensuring durability and reliability in different environments.

Minimum Operating Temperature: -10 °C

The minimum operating temperature of -10 °C allows this laser diode to function effectively in cold conditions, providing versatility for a wide range of operating environments.

Semiconductor Material: GaAlAs

The use of GaAlAs semiconductor material enhances the efficiency and performance of this laser diode, making it a suitable choice for applications requiring high-quality light emission.

Mounting Feature: THROUGH HOLE MOUNT

The through hole mounting feature simplifies the installation and integration of this laser diode into various devices or systems, offering convenience and flexibility in different applications.

Technical Specifications

Laser Diodes SDL6030-101 attributes and parameters. Explore more Laser Diodes devices from Onsemi

Specs

Mounting Feature:

Maximum Operating Temperature:

50 Cel

Minimum Operating Temperature:

-10 Cel

Optoelectronic Type:

Peak Wavelength (nm):

790

Semiconductor Material:

GaAlAs

Sub-Category:

Laser Diodes

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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