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CQF25C/D23

NXP Semiconductors

CQF25C/D23 by NXP Semiconductors

CQF25C/D23 by NXP Semiconductors is a high-performance laser diode with a peak wavelength of 875 nm and a max forward current of 0.15 A. It operates b/w -10 °C to 60 °C, making it ideal for various optoelectronic applications. With an ultra-fast response time of 0.5 ns, it's perfect for precision tasks.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Anansix

USA . 2,419 parts In-Stock

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Digiode

USA . 2,267 parts In-Stock

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Vyrian

USA . 2,045 parts In-Stock

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One Stop Electronics

USA . 1,160 parts In-Stock

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$19.100

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$19.100

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Native Components

USA . 228 parts In-Stock

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$735.850

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$721.133

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$713.774

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$706.416

228

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$721.133

$713.774

$706.416

Northwest PG Solutions

USA . 1,753 parts In-Stock

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$809.435

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Corphita

USA . 4,713 parts In-Stock

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UNI Independent Distributors

Spain . 409 parts In-Stock

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Overview

Experience unparalleled precision and reliability with the CQF25C/D23 laser diode from NXP Semiconductors. Renowned for its superior quality and innovative technology, this versatile component excels in a range of applications—from industrial automation to medical devices—ensuring optimal performance even in challenging environments. Benefit from enhanced efficiency and reduced energy costs, empowering your projects with cutting-edge solutions that truly elevate your operations.

Feature Benefit Bullets

Maximum Forward Current: 0.15 A

This relatively low maximum forward current allows for energy-efficient operation while providing sufficient power for effective laser emission, making it suitable for various applications where power consumption is a critical factor.

Peak Wavelength: 875 nm

The peak wavelength of 875 nm falls within the infrared spectrum, making this laser diode ideal for applications such as optical communication, remote sensing, and medical devices where infrared light is advantageous.

Optoelectronic Type: LASER DIODE

As a laser diode, it delivers coherent light output, ensuring high intensity and precision, which is essential for high-performance applications including industrial, research, and consumer electronics.

Maximum Operating Temperature: 60 °C

With a maximum operating temperature of 60 °C, this laser diode can function reliably in warm environments, providing flexibility in design and installation in various settings.

Minimum Operating Temperature: -10 °C

The capability to operate at temperatures as low as -10 °C ensures that this laser diode can be utilized in colder climates and for applications where temperature variations are prevalent.

Maximum Response Time: 0.0000000005 s

An exceptionally fast response time enables this laser diode to be used in high-speed applications, which is critical for data transmission and high-frequency sensing tasks.

Semiconductor Material: AlGaAs

Utilizing AlGaAs semiconductor material enhances efficiency and performance in the infrared range, offering improved thermal stability and robustness, essential for long-term use.

Spectral Bandwidth: 4.5 nm

A narrow spectral bandwidth of 4.5 nm allows for precise wavelength control, making this laser diode suitable for applications that require exacting standards such as spectroscopy and imaging.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mount design facilitates easy integration into various electronic circuits, ensuring robust physical stability and simplifying the assembly process.

Maximum Forward Voltage: 2.5 V

Operating at a maximum forward voltage of just 2.5 V ensures low voltage operation, contributing to lower energy costs and reducing the complexity of the power supply design.

Technical Specifications

Laser Diodes CQF25C/D23 attributes and parameters. Explore more Laser Diodes devices from NXP Semiconductors

Specs

Maximum Forward Current:

.15 A

Maximum Forward Voltage:

2.5 V

Mounting Feature:

Maximum Operating Temperature:

60 Cel

Minimum Operating Temperature:

-10 Cel

Optoelectronic Type:

Peak Wavelength (nm):

875

Maximum Response Time:

.0000000005 s

Semiconductor Material:

AlGaAs

Spectral Bandwidth:

4.5 m

Sub-Category:

Laser Diodes

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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