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DL-3150-133

Onsemi

DL-3150-133 by Onsemi

DL-3150-133 by Onsemi is a LASER DIODE with peak wavelength of 790nm. It operates at -10 to 70 °C, with max forward current of 0.045A and voltage of 2.3V. Ideal for applications requiring THROUGH HOLE MOUNT in optoelectronics.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 641 parts In-Stock

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641

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Digiode

USA . 468 parts In-Stock

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468

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Distributors (Availability)

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Native Components

USA . 416 parts In-Stock

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$0.218

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$0.209

416

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Northwest PG Solutions

USA . 410 parts In-Stock

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$0.240

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$0.211

410

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$0.211

Problanco Electronics

Mexico . 7,513 parts In-Stock

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TANS Electronics

Latvia . 4,282 parts In-Stock

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Kulean Microsystems

USA . 4,033 parts In-Stock

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SupplyDigital Components

Austria . 2,270 parts In-Stock

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Corphita

USA . 2,027 parts In-Stock

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Corohmni

South Africa . 351 parts In-Stock

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UHIMA Technologies

Türkiye . 260 parts In-Stock

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Overview

Experience superior quality and performance with the DL-3150-133 Laser Diode by Onsemi. As a leading manufacturer in the industry, Onsemi's laser diodes are known for their reliability and precision. Ideal for a wide range of applications, this product offers exceptional value with its efficient design and advanced technology. Whether you're in the medical, industrial, or automotive sector, the DL-3150-133 provides unmatched benefits and advantages to help you achieve your goals. Trust Onsemi for all your laser diode needs and elevate your projects to new heights.

Feature Benefit Bullets

Maximum Forward Current: 0.045 A

With a low maximum forward current, this laser diode is energy-efficient and helps in conserving power.

Peak Wavelength (nm): 790

The peak wavelength of 790 nm indicates a specific range of light emission that may be suitable for specific applications requiring this particular wavelength.

Optoelectronic Type: LASER DIODE

Being a laser diode, this product provides coherent and concentrated light output suitable for various applications such as communication, sensing, and industrial processes.

Maximum Operating Temperature: 70 °C

With a maximum operating temperature of 70 °C, this laser diode can withstand higher temperatures without compromising its performance.

Minimum Operating Temperature: -10 °C

The low minimum operating temperature of -10 °C ensures that this laser diode can function in a wide range of environmental conditions.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature simplifies the installation process and provides a secure and stable mounting for the laser diode.

Maximum Forward Voltage: 2.3 V

The low maximum forward voltage requirement of 2.3 V ensures efficient power consumption while delivering the desired laser output.

Technical Specifications

Laser Diodes DL-3150-133 attributes and parameters. Explore more Laser Diodes devices from Onsemi

Specs

Maximum Forward Current:

.045 A

Maximum Forward Voltage:

2.3 V

Mounting Feature:

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-10 Cel

Optoelectronic Type:

Peak Wavelength (nm):

790

Sub-Category:

Laser Diodes

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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