Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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LASER DIODE; Mounting Feature: SURFACE MOUNT; Maximum Forward Current: .3 A; Peak Wavelength (nm): 1569; Maximum Operating Temperature: 70 Cel; Semiconductor Material: InGaAsP;
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Laser Diodes NX8562LF687-BA-A attributes and parameters. Explore more Laser Diodes devices from Renesas Electronics
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2N2222A
Texas Instruments
2N2222A by Texas Instruments is a small signal NPN bipolar junction transistor (BJT) with a max collector-emitter voltage of 40V and a max collector current of 0.8A. It is commonly used for switching applications due to its fast turn on/off times (35ns/285ns) and high transition frequency (300MHz).
1N4148WT
Formosa Microsemi
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
SMBJ18CA
Meritek Electronics
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BSS138
Yangzhou Yangjie Electronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PDSO-G3; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Operating Mode: ENHANCEMENT MODE;
1N4148WS
Diotec Semiconductor Ag
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
FDV304P
Fairchild Semiconductor
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Moisture Sensitivity Level (MSL): 1; Maximum Drain Current (ID): .46 A;
L7805CV
STMicroelectronics
L7805CV by STMicroelectronics is a fixed positive single output standard regulator with an output voltage of 5V and max current of 1.5A. It operates in temperatures ranging from 0 to 125°C, making it suitable for various applications requiring stable voltage regulation in electronic circuits.
Zetex Plc
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
LM358DT
LM358DT by STMicroelectronics is a dual operational amplifier with a max input offset voltage of 9000 uV. It operates at a nominal voltage of 5V and has a min voltage gain of 25000. This amplifier is commonly used in applications requiring high precision and low power consumption.
DRV5053VAQLPG
Texas Instruments DRV5053VAQLPG is a magnetic field sensor with 2.5-38V supply voltage range, -40 to 125°C operating temperature, and 0-2V output. Ideal for applications requiring Hall effect sensors like automotive, industrial automation, and robotics due to its compact size (1.52" x 4mm) and high output current capability of 2.3A.
261
New England Microwave
Other Interface ICs; No. of Terminals: 14; Package Equivalence Code: FL14(UNSPEC); Power Supplies (V): +-5,-15; Package Body Material: PLASTIC/EPOXY; Surface Mount: YES;
LM317T
Micro Commercial Components
ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Terminal Form: THROUGH-HOLE; Moisture Sensitivity Level (MSL): 1; Maximum Output Current-1: 1.5 A; Operating Temperature (TJ-Min): 0 Cel;
PIC18F4550-I/ML
Microchip Technology
The Microchip Technology PIC18F4550-I/ML is an 8-bit microcontroller with a max clock frequency of 48 MHz. It features 13-Ch 10-Bit ADC channels and USB connectivity, making it ideal for industrial applications requiring high-speed data processing and analog-to-digital conversion. With low power mode and flash ROM programmability, this chip offers efficient performance in compact designs.
MMBT3906LT1G
Onsemi
MMBT3906LT1G by Onsemi is a PNP BJT with VCEsat of 0.4V, hFE of 30, and fT of 250MHz. Ideal for small signal applications in electronics due to its low power dissipation, high transition frequency, and compact SOT-23 package. Suitable for use in temperature-sensitive environments with an operating range from -65°C to 150°C.
MBR130T1G
MBR130T1G by Onsemi is a Schottky rectifier diode with max output current of 1A and max repetitive peak reverse voltage of 30V. It operates b/w -65 to 125°C, suitable for surface mount applications in electronics requiring low forward voltage drop.
LM107H/883
Advanced Micro Devices
OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Low-Offset: NO;
M24308/2-1F
Itt Cannon
D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; Additional Features: STANDARD: MIL-DTL-24308, POLARIZED; Mating Info.: MULTIPLE MATING PARTS AVAILABLE; Filter Feature: NO;
NUP2105LT1G
NUP2105LT1G by Onsemi is a Transient Suppression Device with 350W power dissipation, 29.1V breakdown voltage, and 44V clamping voltage. Commonly used in electronic circuits for surge protection due to its bidirectional polarity and silicon diode element material.
LM317TG
LM317TG by Texas Instruments is an adjustable positive single output standard regulator with a max output voltage of 37V and max output current of 1.5A. It operates in temperatures ranging from 0 to 125°C, making it suitable for various applications requiring precise voltage regulation in electronic circuits. The package style is flange mount, with a rectangular shape and through-hole terminals for easy installation.
NDL7405PD
Renesas Electronics
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 85 Cel; Semiconductor Material: InGaAs; Maximum Forward Current: .075 A; Maximum Forward Voltage: 1.5 V;
SDL3140-211
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 60 Cel; Minimum Operating Temperature: -10 Cel; Peak Wavelength (nm): 790;
TOLD323CBA
Toshiba
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 70 Cel; Maximum Forward Voltage: 2 V; Maximum Response Time: .000000001 s; Peak Wavelength (nm): 1310;
NX8562LF549-BA-AZ
LASER DIODE; Peak Wavelength (nm): 1555; Maximum Forward Voltage: 1.5 V; Maximum Forward Current: .3 A; Semiconductor Material: GaAs; Maximum Operating Temperature: 70 Cel;
STH91008G
Infineon Technologies
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Voltage: 1.5 V; Maximum Operating Temperature: 70 Cel; Peak Wavelength (nm): 1550; Maximum Forward Current: .12 A;
NX8567SAM291-CC
LASER DIODE; Maximum Response Time: .000000000125 s; Minimum Operating Temperature: -5 Cel; Maximum Forward Current: .15 A; Maximum Forward Voltage: 2 V; Peak Wavelength (nm): 1529;
NX8570SC807-BA-A
LASER DIODE; Semiconductor Material: InGaAsP; Maximum Forward Voltage: 2.5 V; Maximum Forward Current: .3 A; Minimum Operating Temperature: -5 Cel; Peak Wavelength (nm): 1580;
STH61004G
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Forward Voltage: 1.5 V; Peak Wavelength (nm): 1300; Maximum Forward Current: .12 A;
SPLPL90_3
Osram Opto Semiconductors
Osram Opto Semiconductors' SPLPL90_3 is a SINGLE laser diode with 4.9mm size, peak wavelength of 905nm, and max forward current of 40A. It operates b/w -40 to 85°C and has a nominal output power of 75kW. Ideal for applications requiring high-power lasers in through-hole mounting configurations.
NDL7405P4D
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .075 A; Minimum Operating Temperature: -40 Cel; Semiconductor Material: InGaAs; Peak Wavelength (nm): 1310;
NX8563LA565-CD-A
LASER DIODE; Maximum Response Time: .00000000012 s; Peak Wavelength (nm): 1556; Maximum Forward Current: .3 A; Minimum Operating Temperature: -20 Cel; Maximum Operating Temperature: 85 Cel;
SDL6030-001
SDL6030-001 by Onsemi is a GaAlAs LASER DIODE with peak wavelength of 790nm. It operates b/w -10 °C to 50°C, featuring THROUGH HOLE MOUNT. Ideal for applications requiring precise laser emission in optoelectronics and telecommunications.
NX8567SA610-CC
LASER DIODE; Maximum Forward Voltage: 2 V; Peak Wavelength (nm): 1561; Maximum Operating Temperature: 70 Cel; Maximum Response Time: .000000000125 s; Maximum Forward Current: .15 A;
NX8571SA606-CA
LASER DIODE; Maximum Forward Current: .01 A; Minimum Operating Temperature: -20 Cel; Semiconductor Material: InGaAsP; Maximum Forward Voltage: 2.5 V; Maximum Operating Temperature: 70 Cel;
NX8564LE887-CC
LASER DIODE; Minimum Operating Temperature: -20 Cel; Maximum Forward Current: .15 A; Maximum Response Time: .000000000125 s; Maximum Forward Voltage: 2 V; Maximum Operating Temperature: 70 Cel;
STL81005A
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -40 Cel; Maximum Forward Current: .12 A; Maximum Operating Temperature: 85 Cel; Peak Wavelength (nm): 1330;
NX8562LF671-BA-A
LASER DIODE; Mounting Feature: SURFACE MOUNT; Minimum Operating Temperature: -20 Cel; Maximum Operating Temperature: 70 Cel; Maximum Forward Current: .3 A; Peak Wavelength (nm): 1567;
TOLD124R
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 780; Maximum Forward Current: .08 A; Maximum Operating Temperature: 50 Cel; Minimum Operating Temperature: -10 Cel;
NX8571SC354-BA-A
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -5 Cel; Peak Wavelength (nm): 1535; Maximum Forward Current: .3 A; Maximum Operating Temperature: 70 Cel;
SDL6032-011
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -10 Cel; Maximum Operating Temperature: 50 Cel; Peak Wavelength (nm): 830;
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NX8508BE47-CC
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Voltage: 1.6 V; Maximum Forward Current: .15 A; Peak Wavelength (nm): 1470; Semiconductor Material: InGaAsP;
NX8501BG-BA
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .2 A; Minimum Operating Temperature: 0 Cel; Semiconductor Material: InGaAsP; Maximum Forward Voltage: 2 V;
NX8501AG-BA
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: 0 Cel; Semiconductor Material: InGaAsP; Maximum Operating Temperature: 65 Cel; Maximum Forward Current: .2 A;
NX8501CG-BA
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 65 Cel; Semiconductor Material: InGaAsP; Peak Wavelength (nm): 1510; Minimum Operating Temperature: 0 Cel;
NX8501CC
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Voltage: 2 V; Semiconductor Material: InGaAsP; Minimum Operating Temperature: 0 Cel; Peak Wavelength (nm): 1510;
NX8501BC-CA
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .2 A; Minimum Operating Temperature: 0 Cel; Maximum Forward Voltage: 2 V; Peak Wavelength (nm): 1510;
NX8508BE49-CC
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Response Time: .0000000001 s; Semiconductor Material: InGaAsP; Maximum Forward Current: .15 A; Maximum Forward Voltage: 1.6 V;
NX8501AC-BA
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Voltage: 2 V; Minimum Operating Temperature: 0 Cel; Maximum Operating Temperature: 65 Cel; Semiconductor Material: InGaAsP;
NX8501BG-CA
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Voltage: 2 V; Peak Wavelength (nm): 1510; Semiconductor Material: InGaAsP; Maximum Forward Current: .2 A;
NX8501AG-CA
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Voltage: 2 V; Semiconductor Material: InGaAsP; Maximum Forward Current: .2 A; Minimum Operating Temperature: 0 Cel;
NX8501CG
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 65 Cel; Minimum Operating Temperature: 0 Cel; Semiconductor Material: InGaAsP; Peak Wavelength (nm): 1510;
NX8501CC-BA
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .2 A; Maximum Forward Voltage: 2 V; Minimum Operating Temperature: 0 Cel; Semiconductor Material: InGaAsP;
NX8501BC-BA
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 65 Cel; Peak Wavelength (nm): 1510; Minimum Operating Temperature: 0 Cel; Maximum Forward Current: .2 A;
NX8501CG-CA
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Semiconductor Material: InGaAsP; Maximum Operating Temperature: 65 Cel; Maximum Forward Voltage: 2 V; Maximum Forward Current: .2 A;
NX8501AG
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 65 Cel; Peak Wavelength (nm): 1510; Minimum Operating Temperature: 0 Cel; Semiconductor Material: InGaAsP;
NX8501BG
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Semiconductor Material: InGaAsP; Minimum Operating Temperature: 0 Cel; Maximum Forward Voltage: 2 V; Maximum Forward Current: .2 A;
NX8501AC
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Voltage: 2 V; Peak Wavelength (nm): 1510; Semiconductor Material: InGaAsP; Minimum Operating Temperature: 0 Cel;
NX8501AC-CA
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Semiconductor Material: InGaAsP; Maximum Forward Voltage: 2 V; Minimum Operating Temperature: 0 Cel; Peak Wavelength (nm): 1510;
NX8501BC
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 65 Cel; Semiconductor Material: InGaAsP; Minimum Operating Temperature: 0 Cel; Peak Wavelength (nm): 1510;
NX8501CC-CA
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -40 Cel; Maximum Forward Voltage: 2 V; Semiconductor Material: InGaAsP; Maximum Forward Current: .2 A;
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