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DL8032-001

Onsemi

DL8032-001 by Onsemi

DL8032-001 by Onsemi is a Laser Diode with 0.2A max forward current, 830nm peak wavelength, and -10 to 50 °C operating temperature range. Ideal for applications requiring through hole mounting of LASER DIODEs in various optoelectronic systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 1,452 parts In-Stock

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Vyrian

USA . 69 parts In-Stock

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Native Components

USA . 591 parts In-Stock

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$9.868

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591

$9.868

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Northwest PG Solutions

USA . 192 parts In-Stock

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$10.854

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$9.769

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192

$10.854

$9.769

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TANS Electronics

Latvia . 5,103 parts In-Stock

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SupplyDigital Components

Austria . 3,917 parts In-Stock

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3,917

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Kulean Microsystems

USA . 1,155 parts In-Stock

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Corphita

USA . 907 parts In-Stock

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907

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Problanco Electronics

Mexico . 675 parts In-Stock

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Corohmni

South Africa . 292 parts In-Stock

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UHIMA Technologies

Türkiye . 115 parts In-Stock

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Overview

Unleash the power of cutting-edge technology with the DL8032-001 Laser Diode by Onsemi. Crafted with precision and expertise, this laser diode offers unparalleled quality and reliability. From medical equipment to barcode scanners, this versatile product caters to a wide range of applications with ease. Experience the value and benefits of superior performance, efficiency, and durability that only Onsemi can deliver. Elevate your projects to new heights with the DL8032-001 Laser Diode.

Feature Benefit Bullets

Maximum Forward Current: 0.2 A

This ensures that the laser diode can handle a stable and consistent current flow, resulting in reliable performance.

Peak Wavelength (nm): 830

The specific peak wavelength of 830nm makes this laser diode suitable for various applications including communications, medical devices, and industrial use.

Optoelectronic Type: LASER DIODE

Being a laser diode, this product offers a compact and efficient light source for precise and focused applications such as laser pointers or barcode scanners.

Maximum Operating Temperature: 50 °C

With a maximum operating temperature of 50 °C, this laser diode can withstand elevated temperatures during prolonged use without compromising its performance.

Minimum Operating Temperature: -10 °C

The ability to operate at temperatures as low as -10 °C allows for a wide range of environmental conditions, making this product versatile and reliable in various settings.

Mounting Feature: THROUGH HOLE MOUNT

The through hole mounting feature simplifies the installation process, providing a secure and stable connection for the laser diode in a variety of electronic devices or systems.

Technical Specifications

Laser Diodes DL8032-001 attributes and parameters. Explore more Laser Diodes devices from Onsemi

Specs

Maximum Forward Current:

.2 A

Mounting Feature:

Maximum Operating Temperature:

50 Cel

Minimum Operating Temperature:

-10 Cel

Optoelectronic Type:

Peak Wavelength (nm):

830

Sub-Category:

Laser Diodes

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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