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CQF25C/D43

NXP Semiconductors

CQF25C/D43 by NXP Semiconductors

CQF25C/D43 by NXP Semiconductors is a high-performance laser diode with a peak wavelength of 875 nm and a max forward current of 0.15 A. It operates b/w -10 °C to 60 °C, making it ideal for various optoelectronic applications. With an ultra-fast response time of 0.5 ns, it's perfect for precision tasks.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 4,387 parts In-Stock

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Anansix

USA . 2,807 parts In-Stock

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Digiode

USA . 1,662 parts In-Stock

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One Stop Electronics

USA . 1,416 parts In-Stock

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$14.100

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Native Components

USA . 517 parts In-Stock

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$59.621

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Northwest PG Solutions

USA . 2,351 parts In-Stock

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$68.315

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UNI Independent Distributors

Spain . 6,783 parts In-Stock

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Corphita

USA . 1,348 parts In-Stock

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Overview

Elevate your projects with the CQF25C/D43 laser diode from NXP Semiconductors, a leader in high-quality optoelectronic components. This cutting-edge diode boasts exceptional reliability and performance, making it perfect for industrial automation, medical equipment, and consumer electronics. With a robust operating range and swift response time, it ensures precision in every application. Trust in NXP’s legacy of innovation to unlock unparalleled value and efficiency in your designs.

Feature Benefit Bullets

Maximum Forward Current: 0.15 A

This low maximum forward current allows for reduced power consumption, making the laser diode energy-efficient and ideal for battery-operated devices.

Peak Wavelength: 875 nm

The 875 nm peak wavelength is suitable for applications in infrared sensing, allowing for effective communication and detection capabilities in various environments.

Optoelectronic Type: LASER DIODE

As a laser diode, this product provides coherent light with minimal divergence, making it perfect for applications requiring precision and focus, such as in optical systems.

Maximum Operating Temperature: 60 °C

The ability to operate at temperatures up to 60 °C ensures reliability in warmer environments, contributing to the durability of the laser diode in demanding applications.

Minimum Operating Temperature: -10 °C

With a minimum operating temperature of -10 °C, this diode can function effectively in colder environments, offering versatility for varied applications.

Maximum Response Time: 0.0000000005 s

The ultra-fast response time makes this laser diode ideal for high-speed applications, such as data transmission and real-time monitoring systems.

Semiconductor Material: AlGaAs

Utilizing AlGaAs as the semiconductor material ensures efficient performance and high output power, enhancing the overall effectiveness of the laser diode.

Spectral Bandwidth: 4.5 nm

A spectral bandwidth of 4.5 nm allows for a broader range of applications in telecommunications and spectroscopy, providing flexibility in usage.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mount provides easy integration into various printed circuit boards (PCBs), simplifying the assembly process and enhancing customization.

Maximum Forward Voltage: 2.5 V

A maximum forward voltage of 2.5 V indicates compatibility with low-voltage systems, further emphasizing energy efficiency and safety during operation.

Technical Specifications

Laser Diodes CQF25C/D43 attributes and parameters. Explore more Laser Diodes devices from NXP Semiconductors

Specs

Maximum Forward Current:

.15 A

Maximum Forward Voltage:

2.5 V

Mounting Feature:

Maximum Operating Temperature:

60 Cel

Minimum Operating Temperature:

-10 Cel

Optoelectronic Type:

Peak Wavelength (nm):

875

Maximum Response Time:

.0000000005 s

Semiconductor Material:

AlGaAs

Spectral Bandwidth:

4.5 m

Sub-Category:

Laser Diodes

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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