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CQF25A/D11

Philips Semiconductors

CQF25A/D11 by Philips Semiconductors

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Semiconductor Material: AlGaAs; Maximum Forward Voltage: 2.5 V; Maximum Forward Current: .15 A;

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Anansix

USA . 2,772 parts In-Stock

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Vyrian

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Digiode

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Native Components

USA . 310 parts In-Stock

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Northwest PG Solutions

USA . 1,903 parts In-Stock

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One Stop Electronics

USA . 793 parts In-Stock

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UNI Independent Distributors

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Corphita

USA . 1,433 parts In-Stock

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Technical Specifications

Laser Diodes CQF25A/D11 attributes and parameters. Explore more Laser Diodes devices from Philips Semiconductors

Specs

Maximum Forward Current:

.15 A

Maximum Forward Voltage:

2.5 V

JESD-609 Code:

e0

Mounting Feature:

Maximum Operating Temperature:

60 Cel

Minimum Operating Temperature:

-10 Cel

Optoelectronic Type:

Peak Wavelength (nm):

820

Maximum Response Time:

.0000000005 s

Semiconductor Material:

AlGaAs

Spectral Bandwidth:

4.5 m

Sub-Category:

Laser Diodes

Terminal Finish:

Manufacturer Highlights

Philips Semiconductors

In September 2006, Philips completed the sale of an 80.1% stake in Philips Semiconductors to a consortium of private equity investors consisting of KKR, Bain Capital, Silver Lake Partners, Apax Partners and AlpInvest Partners. The new company name NXP (from Next eXPerience) was announced on August 31, 2006, and the company was officially launched during the Internationale Funkausstellung (IFA) consumer electronics show in Berlin. The newly independent NXP was ranked as one of the world's top 10 semiconductor companies

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