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DL3149-053

Onsemi

DL3149-053 by Onsemi

DL3149-053 by Onsemi is a 680nm LASER DIODE with AlGaInP material. It operates b/w -10 °C to 50°C, suitable for THROUGH HOLE MOUNT applications in optoelectronics.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Digiode

USA . 2,338 parts In-Stock

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Vyrian

USA . 2,035 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 10 parts In-Stock

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TANS Electronics

Latvia . 8,340 parts In-Stock

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SupplyDigital Components

Austria . 7,213 parts In-Stock

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Kulean Microsystems

USA . 6,454 parts In-Stock

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Problanco Electronics

Mexico . 6,085 parts In-Stock

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Corphita

USA . 1,333 parts In-Stock

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Northwest PG Solutions

USA . 474 parts In-Stock

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UHIMA Technologies

Türkiye . 260 parts In-Stock

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Native Components

USA . 164 parts In-Stock

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Corohmni

South Africa . 100 parts In-Stock

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Overview

Illuminate your projects with the DL3149-053 Laser Diode by Onsemi. Known for its superior quality and reliability, Onsemi is a reputable manufacturer in the industry. This laser diode, operating at a peak wavelength of 680nm, offers countless applications in fields such as telecommunications, medical equipment, and industrial lasers. Experience the value and benefits of this cutting-edge technology, providing unmatched performance and precision to meet all your project needs.

Feature Benefit Bullets

Peak Wavelength: 680 nm

This specific wavelength is ideal for various applications such as medical devices, telecommunications, and industrial alignment.

Optoelectronic Type: LASER DIODE

Lasers diodes are well-known for their high efficiency and precision, making them a popular choice in many industries.

Maximum Operating Temperature: 50 °C

With a high maximum operating temperature, this laser diode can withstand harsh environmental conditions, ensuring reliability and durability.

Minimum Operating Temperature: -10 °C

The low minimum operating temperature allows this laser diode to function effectively even in cold environments.

Semiconductor Material: AlGaInP

AlGaInP is a commonly used semiconductor material known for its high efficiency, stability, and reliability in laser diode applications.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature provides secure and stable installation of the laser diode, making it suitable for applications where vibration or movement is a concern.

Technical Specifications

Laser Diodes DL3149-053 attributes and parameters. Explore more Laser Diodes devices from Onsemi

Specs

Mounting Feature:

Maximum Operating Temperature:

50 Cel

Minimum Operating Temperature:

-10 Cel

Optoelectronic Type:

Peak Wavelength (nm):

680

Semiconductor Material:

AlGaInP

Sub-Category:

Laser Diodes

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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