Loading...

HL65051DG

Ushio Opto Semiconductors

HL65051DG by Ushio Opto Semiconductors

LASER DIODE; Mounting Feature: RADIAL MOUNT; Size: 1.6 mm; Peak Wavelength (nm): 660; Maximum Forward Current: .21 A; Maximum Threshold Current: 75 mA;

Median Price

-

Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Technical Specifications

Laser Diodes HL65051DG attributes and parameters. Explore more Laser Diodes devices from Ushio Opto Semiconductors

Specs

Configuration:

SINGLE WITH BUILT-IN PHOTO DIODE

Maximum Forward Current:

.21 A

Maximum Forward Voltage:

3.3 V

Mounting Feature:

No. of Functions:

1

Maximum Operating Temperature:

60 Cel

Minimum Operating Temperature:

-10 Cel

Optoelectronic Type:

Nominal Output Power:

130 W

Peak Wavelength (nm):

660

Semiconductor Material:

AlGaInP

Shape:

ROUND

Size:

1.6 mm

Maximum Threshold Current:

75 mA

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.