Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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CQF25C/D22 by NXP Semiconductors is a high-performance laser diode with a peak wavelength of 875 nm and a max forward current of 0.15 A. It operates efficiently b/w -10 °C to 60 °C, making it ideal for various optoelectronic applications. With an ultra-fast response time of 0.5 ns, it's perfect for precision tasks in communication systems.
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The low maximum forward current allows for reduced power consumption, making this laser diode more energy-efficient and better suited for battery-powered applications.
The 875 nm wavelength is ideal for applications such as remote sensing and optical communication, where the infrared spectrum is advantageous.
As a laser diode, this product offers high coherence and directionality, which are essential for precision applications in industrial and medical fields.
The high maximum operating temperature enhances reliability and performance in demanding environments, making it suitable for industrial applications.
With a minimum operating temperature of -10 °C, this laser diode can perform well in colder climates, increasing its versatility.
The incredibly fast response time allows for high-speed data transmission and communication, making it perfect for cutting-edge technology applications.
The use of AlGaAs semiconductor material provides excellent efficiency and performance, particularly in optical applications, resulting in a strong output with low energy loss.
A narrow spectral bandwidth ensures specific wavelength emissions, which is crucial for applications requiring precision in wavelength tuning.
Through hole mounting offers a robust and reliable installation option, enhancing durability and ease of integration into various circuits.
The low maximum forward voltage contributes to lower power requirements, which helps in reducing overall power costs in electronic designs.
Laser Diodes CQF25C/D22 attributes and parameters. Explore more Laser Diodes devices from NXP Semiconductors
Maximum Forward Current:
Maximum Forward Voltage:
Mounting Feature:
Maximum Operating Temperature:
Minimum Operating Temperature:
Optoelectronic Type:
Peak Wavelength (nm):
Maximum Response Time:
Semiconductor Material:
Spectral Bandwidth:
Sub-Category:
NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.
Executive Director, President, CEO
Kurt Sievers
Executive VP, CFO
Bill Betz
Executive VP, Chief Sales Officer
Ron Martino
ICN8
Fabrication
Fab Initiation
1996
Netherlands
Nijmegen
Wafer Capacity
55,000
ATMC (Austin Tech & Mfg Center)
1995
USA
Austin
30,000
N/A
1989
Germany
Boeblingen
CHD
1993
Chandler
OHTC
1991
24,000
New Expansion Fab
2026
ECHO
2020
10,000
2N2222A
Baneasa S A
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .8 A; Qualification: Not Qualified;
DS18B20Z
Dallas Semiconductor
TEMPERATURE SENSOR,SWITCH/DIGITAL OUTPUT,SERIAL; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Shape or Style: RECTANGULAR; Housing: PLASTIC; Maximum Accuracy (Cel): 0.50;
ECA2DHG4R7
Panasonic
ECA2DHG4R7 by Panasonic is a 4.7uF aluminum electrolytic capacitor with 200V rated DC voltage. It features tan delta of 0.15, leakage current of 0.0664mA, and ripple current of 50mA, making it ideal for applications requiring high capacitance stability and low leakage in through-hole mounting setups at temperatures ranging from -25 to 105°C.
SS14
SPC TECHNOLOGY/ MULTICOMP
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
C0603X104K5RACAUTO
KEMET Corporation
C0603X104K5RACAUTO by KEMET Corp is a ceramic capacitor with capacitance of 0.1 uF and rated DC voltage of 50 V. It has a temperature coefficient of 15% and can operate b/w -55 to 125 °C. This SMT package is commonly used in automotive applications due to its AEC-Q200 reference standard.
PIC18F4550-I/P
Microchip Technology
PIC18F4550-I/P by Microchip Technology is an 8-bit microcontroller with a max clock frequency of 48 MHz. It features 13-Ch 10-Bit ADC channels and USB connectivity, making it ideal for industrial applications requiring low power consumption and high-speed data processing. With 2048 RAM bytes and 256 Data EEPROM size, this CMOS technology-based microcontroller offers versatile performance in various embedded systems.
LL4148
Kec
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
2N7002
Fairchild Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Time At Peak Reflow Temperature (s): 30; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Onsemi
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; No. of Terminals: 3;
NC7WZ17P6X
The Onsemi NC7WZ17P6X is a logic gate with 2 functions, featuring a propagation delay of 13.1 ns at 1.8V supply voltage. Ideal for industrial applications, it operates b/w -40 to 85°C and has a max power supply current of 100mA. With Schmitt Trigger technology and small outline packaging, it suits compact electronic designs requiring fast signal processing.
BSS138PS,115
NXP Semiconductors
NXP Semiconductors' BSS138PS,115 is a N-CHANNEL FET with 60V DS breakdown voltage and 0.32A max drain current. Ideal for switching applications, it features a 1.6 ohm max on-resistance and operates in enhancement mode. The transistor comes in a small outline package with GULL WING terminals, making it suitable for surface mount designs.
SN6505BDBVR
Texas Instruments
SN6505BDBVR by Texas Instruments is a small outline, low profile interface IC with 6 terminals. It operates b/w -55 to 125°C and supports a max output current of 1.5A at supply voltages ranging from 2.25V to 5.5V. Ideal for military-grade applications requiring compact design and high reliability.
SMBJ18CA
Daco Semiconductor
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LM317T
Linear Technology
ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Terminal Form: THROUGH-HOLE; Operating Temperature (TJ-Min): 0 Cel; No. of Functions: 1; JESD-609 Code: e0;
1N4148WS
Continental Device India
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
FDN306P
FDN306P by Onsemi is a P-CHANNEL FET with 12V DS Breakdown Voltage, ideal for SWITCHING applications. It features SINGLE configuration with BUILT-IN DIODE and GULL WING terminals. Operating in ENHANCEMENT MODE, it has a max ID of 2.6A and 0.04 ohm RDS(on), suitable for small outline packages at temperatures ranging from -55 to 150°C.
M85049/85-08W02
Amphenol
CIRCULAR CONN ACCESSORY; Shell Sizes: 8; 9; IEC Conformity: NO; MIL-Connector Accessory Name: BAND LOCK ADAPTER; MIL Conformity: YES; DIN Conformity: NO;
MBRM140T1G
MBRM140T1G by Onsemi is a Schottky rectifier diode with 40V max repetitive peak reverse voltage, 1A max output current, and 0.3V max forward voltage. It is used in applications requiring small outline surface mount diodes for efficient power management.
LM2675M-ADJ/NOPB
National Semiconductor
SWITCHING REGULATOR; Temperature Grade: AUTOMOTIVE; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;
Silicon Transistor
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
NX8563LAS437-CD-A
Renesas Electronics
LASER DIODE; Minimum Operating Temperature: -20 Cel; Maximum Operating Temperature: 85 Cel; Semiconductor Material: InGaAsP; Maximum Forward Current: .3 A; Peak Wavelength (nm): 1544;
LT022MC
Sharp Corporation
Sharp Corporation's LT022MC is a LASER DIODE with peak wavelength of 780nm. It operates at -10 to 60°C, with max forward current of 0.1A and voltage of 2.2V. Ideal for optoelectronic applications requiring THROUGH HOLE MOUNTing features.
NDL7130D
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Voltage: 2.5 V; Maximum Operating Temperature: 55 Cel; Peak Wavelength (nm): 1480; Minimum Operating Temperature: -20 Cel;
DL-3149-057
DL-3149-057 by Onsemi is a LASER DIODE with peak wavelength of 670nm. It has max forward current of 0.045A and max forward voltage of 2.6V. Ideal for applications requiring precise laser emission in temp range -10 to 60 °C, with through hole mounting feature.
NX8567SAM441-BC
LASER DIODE; Maximum Response Time: .000000000125 s; Maximum Forward Current: .15 A; Maximum Forward Voltage: 2 V; Minimum Operating Temperature: -5 Cel; Peak Wavelength (nm): 1544;
TOED101
Toshiba
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -40 Cel; Maximum Operating Temperature: 85 Cel; Peak Wavelength (nm): 1310;
NX8570SC6053-BA-A
LASER DIODE; Maximum Forward Current: .3 A; Maximum Forward Voltage: 2.5 V; Peak Wavelength (nm): 1605; Maximum Operating Temperature: 70 Cel; Semiconductor Material: InGaAsP;
NX8562LF828-BA-A
LASER DIODE; Mounting Feature: SURFACE MOUNT; Maximum Forward Voltage: 1.5 V; Peak Wavelength (nm): 1583; Minimum Operating Temperature: -20 Cel; Semiconductor Material: InGaAsP;
NX8565LE870-CC
LASER DIODE; Mounting Feature: SURFACE MOUNT; Maximum Operating Temperature: 70 Cel; Peak Wavelength (nm): 1587; Minimum Operating Temperature: -20 Cel; Maximum Forward Current: .1 A;
NX8563LA453-CD-A
LASER DIODE; Peak Wavelength (nm): 1545; Maximum Operating Temperature: 85 Cel; Maximum Response Time: .00000000012 s; Maximum Forward Voltage: 2 V; Semiconductor Material: InGaAsP;
TOLD139
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .115 A; Minimum Operating Temperature: -10 Cel; Peak Wavelength (nm): 830; Maximum Operating Temperature: 50 Cel;
NX8567SAM533-CC
LASER DIODE; Maximum Response Time: .000000000125 s; Maximum Forward Voltage: 2 V; Minimum Operating Temperature: -5 Cel; Maximum Operating Temperature: 70 Cel; Maximum Forward Current: .15 A;
TOLD321BCB
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Voltage: 2 V; Maximum Operating Temperature: 80 Cel; Maximum Response Time: .000000001 s; Peak Wavelength (nm): 1310;
NDL7405PD
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 85 Cel; Semiconductor Material: InGaAs; Maximum Forward Current: .075 A; Maximum Forward Voltage: 1.5 V;
NX8567SA441-CC
LASER DIODE; Maximum Response Time: .000000000125 s; Maximum Forward Current: .15 A; Peak Wavelength (nm): 1544; Maximum Operating Temperature: 70 Cel; Minimum Operating Temperature: -5 Cel;
NX8570SA589-CA
LASER DIODE; Peak Wavelength (nm): 1559; Maximum Forward Current: .3 A; Minimum Operating Temperature: -5 Cel; Maximum Operating Temperature: 70 Cel; Semiconductor Material: InGaAsP;
SDL3034-011
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 780; Minimum Operating Temperature: -10 Cel; Maximum Operating Temperature: 60 Cel;
NDL3310
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .095 A; Peak Wavelength (nm): 650; Maximum Forward Voltage: 3 V; Maximum Operating Temperature: 40 Cel;
NX8570SC6070-BA-AZ
LASER DIODE; Peak Wavelength (nm): 1607; Maximum Forward Current: .3 A; Minimum Operating Temperature: -5 Cel; Semiconductor Material: InGaAsP; Maximum Operating Temperature: 70 Cel;
CQF25B/D12
CQF25B/D12 by NXP Semiconductors is a high-performance laser diode with a peak wavelength of 850 nm and a max forward current of 0.15 A. It operates efficiently b/w -10 °C to 60 °C, making it ideal for various optoelectronic applications. With an ultra-fast response time of 0.5 ns, it's perfect for data communication systems.
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CQF25B/D14
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Response Time: .0000000005 s; Maximum Forward Voltage: 2.5 V; Maximum Operating Temperature: 60 Cel; Spectral Bandwidth: 4.5 m;
CQF25A/D12
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Semiconductor Material: AlGaAs; Spectral Bandwidth: 4.5 m; Maximum Operating Temperature: 60 Cel; Maximum Response Time: .0000000005 s;
CQF23/D24
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Semiconductor Material: AlGaAs; Spectral Bandwidth: 2 m; Maximum Response Time: .0000000005 s; Maximum Forward Voltage: 2.5 V;
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .15 A; Maximum Forward Voltage: 2.5 V; Spectral Bandwidth: 4.5 m; Minimum Operating Temperature: -10 Cel;
CQF25A/D14
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 60 Cel; Maximum Forward Voltage: 2.5 V; Maximum Forward Current: .15 A; Peak Wavelength (nm): 820;
CQF23/D52
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Semiconductor Material: AlGaAs; Maximum Forward Current: .07 A; Peak Wavelength (nm): 790; Maximum Forward Voltage: 2.5 V;
CQF25B/D24
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 60 Cel; Semiconductor Material: AlGaAs; Minimum Operating Temperature: -10 Cel; Maximum Forward Voltage: 2.5 V;
CQF23/D12
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Spectral Bandwidth: 2 m; Maximum Forward Voltage: 2.5 V; Maximum Operating Temperature: 60 Cel; Maximum Forward Current: .07 A;
CQF25A/D13
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Spectral Bandwidth: 4.5 m; Maximum Forward Current: .15 A; Maximum Response Time: .0000000005 s; Peak Wavelength (nm): 820;
CQF23/D41
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -10 Cel; Spectral Bandwidth: 2 m; Maximum Operating Temperature: 60 Cel; Maximum Forward Current: .07 A;
CQF25B/D11
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .15 A; Maximum Forward Voltage: 2.5 V; Peak Wavelength (nm): 850; Minimum Operating Temperature: -10 Cel;
CQF25A/D41
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -10 Cel; Maximum Response Time: .0000000005 s; Semiconductor Material: AlGaAs; Maximum Forward Current: .15 A;
CQF23/D44
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Semiconductor Material: AlGaAs; Peak Wavelength (nm): 790; Maximum Forward Voltage: 2.5 V; Maximum Response Time: .0000000005 s;
CQF25B/D13
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Response Time: .0000000005 s; Maximum Forward Voltage: 2.5 V; Spectral Bandwidth: 4.5 m; Minimum Operating Temperature: -10 Cel;
CQF23/D14
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 60 Cel; Spectral Bandwidth: 2 m; Maximum Forward Voltage: 2.5 V; Maximum Forward Current: .07 A;
CQF25A/D11
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .15 A; Maximum Response Time: .0000000005 s; Maximum Forward Voltage: 2.5 V; Maximum Operating Temperature: 60 Cel;
CQF23/D11
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Semiconductor Material: AlGaAs; Peak Wavelength (nm): 790; Minimum Operating Temperature: -10 Cel; Maximum Forward Voltage: 2.5 V;
CQF23/D13
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Response Time: .0000000005 s; Spectral Bandwidth: 2 m; Peak Wavelength (nm): 790; Minimum Operating Temperature: -10 Cel;
CQF23/D43
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Semiconductor Material: AlGaAs; Maximum Operating Temperature: 60 Cel; Spectral Bandwidth: 2 m; Maximum Response Time: .0000000005 s;
CQF25A/D52
LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Spectral Bandwidth: 4.5 m; Semiconductor Material: AlGaAs; Minimum Operating Temperature: -10 Cel; Maximum Forward Current: .15 A;
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