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SDL5033-001

Onsemi

SDL5033-001 by Onsemi

SDL5033-001 by Onsemi is an 875nm LASER DIODE with GaAlAs material. It operates b/w -10 °C to 50°C, suitable for THROUGH HOLE MOUNT applications in optoelectronics.

Median Price

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Lifecycle Status

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2

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1k+

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Digiode

USA . 1,140 parts In-Stock

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Vyrian

USA . 948 parts In-Stock

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Kulean Microsystems

USA . 8,345 parts In-Stock

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TANS Electronics

Latvia . 6,119 parts In-Stock

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Problanco Electronics

Mexico . 5,544 parts In-Stock

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SupplyDigital Components

Austria . 2,247 parts In-Stock

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UHIMA Technologies

Türkiye . 735 parts In-Stock

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Corphita

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Corohmni

South Africa . 92 parts In-Stock

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Overview

Boost your projects with the SDL5033-001 by Onsemi, a top-quality laser diode that offers unmatched performance and reliability. Manufactured by industry leader Onsemi, this laser diode is perfect for a wide range of applications, from medical devices to industrial equipment. With a peak wavelength of 875nm and a wide operating temperature range, this GaAlAs semiconductor material delivers exceptional results. Trust Onsemi's reputation for excellence and invest in the SDL5033-001 for superior value and benefits that will take your projects to the next level.

Feature Benefit Bullets

Peak Wavelength (nm): 875

The peak wavelength of 875nm makes this laser diode suitable for various applications such as fiber optics communication and medical equipment.

Optoelectronic Type: LASER DIODE

Being a laser diode, this product provides high efficiency and precision in delivering laser beams for tasks like laser cutting and engraving.

Maximum Operating Temperature: 50 °C

The high maximum operating temperature of 50 °C ensures that this laser diode can perform reliably in various environmental conditions without overheating.

Minimum Operating Temperature: -10 °C

The low minimum operating temperature of -10 °C guarantees that this laser diode can still operate efficiently in colder environments without any issues.

Semiconductor Material: GaAlAs

The use of GaAlAs semiconductor material in this laser diode provides high power output and efficient energy conversion, making it a high-performance choice for laser applications.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature simplifies the installation process and ensures a secure and stable connection, making this laser diode easy to integrate into various systems.

Technical Specifications

Laser Diodes SDL5033-001 attributes and parameters. Explore more Laser Diodes devices from Onsemi

Specs

Mounting Feature:

Maximum Operating Temperature:

50 Cel

Minimum Operating Temperature:

-10 Cel

Optoelectronic Type:

Peak Wavelength (nm):

875

Semiconductor Material:

GaAlAs

Sub-Category:

Laser Diodes

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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