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DL-3149-070

Onsemi

DL-3149-070 by Onsemi

DL-3149-070 by Onsemi is a 695nm LASER DIODE with AlGaInP material. It operates b/w -10 °C to 60°C, suitable for THROUGH HOLE MOUNT applications like medical devices and industrial sensors.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,417 parts In-Stock

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Digiode

USA . 931 parts In-Stock

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SupplyDigital Components

Austria . 7,261 parts In-Stock

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Kulean Microsystems

USA . 4,736 parts In-Stock

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Problanco Electronics

Mexico . 2,783 parts In-Stock

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Northwest PG Solutions

USA . 1,610 parts In-Stock

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Corphita

USA . 1,246 parts In-Stock

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TANS Electronics

Latvia . 1,064 parts In-Stock

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Corohmni

South Africa . 406 parts In-Stock

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Native Components

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UHIMA Technologies

Türkiye . 2 parts In-Stock

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Overview

Experience the superior quality and precision of the DL-3149-070 Laser Diode by Onsemi. With a peak wavelength of 695nm, this cutting-edge optoelectronic component is perfect for a wide range of applications. From industrial processes to medical equipment, the DL-3149-070 delivers unmatched performance and reliability. Trust in Onsemi's reputation for excellence and innovation, and discover the value and benefits that this laser diode can bring to your projects. Elevate your technology with the DL-3149-070 from Onsemi today.

Feature Benefit Bullets

Peak Wavelength: 695nm

This specific wavelength is often used for medical applications such as blood analysis and treatment.

Optoelectronic Type: LASER DIODE

Laser diodes are known for their efficiency and precision in various applications including telecommunications and industrial purposes.

Maximum Operating Temperature: 60 °C

The high maximum operating temperature allows for stable performance even in demanding operating conditions.

Minimum Operating Temperature: -10 °C

The low minimum operating temperature ensures the product can be used in a wide range of environments without risk of damage.

Semiconductor Material: AlGaInP

AlGaInP is a commonly used material in laser diodes known for its reliability and high efficiency, making this product a durable choice.

Mounting Feature: THROUGH HOLE MOUNT

The through hole mounting feature provides easy and secure installation of the laser diode for improved stability and performance.

Technical Specifications

Laser Diodes DL-3149-070 attributes and parameters. Explore more Laser Diodes devices from Onsemi

Specs

Mounting Feature:

Maximum Operating Temperature:

60 Cel

Minimum Operating Temperature:

-10 Cel

Optoelectronic Type:

Peak Wavelength (nm):

695

Semiconductor Material:

AlGaInP

Sub-Category:

Laser Diodes

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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