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DL-5147-041

Onsemi

DL-5147-041 by Onsemi

DL-5147-041 by Onsemi is a LASER DIODE with Peak Wavelength of 655nm, Max Forward Current of 0.11A, and Max Forward Voltage of 2.8V. It operates b/w -10 °C to 60°C, suitable for THROUGH HOLE MOUNT applications in various industries.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,755 parts In-Stock

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1,755

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Digiode

USA . 1,148 parts In-Stock

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1,148

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 634 parts In-Stock

1+ parts

$300.044

100+ parts

$294.043

1k+ parts

$291.043

10k+ parts

$288.042

634

$300.044

$294.043

$291.043

$288.042

Northwest PG Solutions

USA . 371 parts In-Stock

1+ parts

$330.048

100+ parts

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371

$330.048

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Kulean Microsystems

USA . 7,264 parts In-Stock

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7,264

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Problanco Electronics

Mexico . 3,034 parts In-Stock

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3,034

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TANS Electronics

Latvia . 2,861 parts In-Stock

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2,861

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Corphita

USA . 2,372 parts In-Stock

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2,372

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SupplyDigital Components

Austria . 2,169 parts In-Stock

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2,169

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UHIMA Technologies

Türkiye . 417 parts In-Stock

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Corohmni

South Africa . 105 parts In-Stock

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Overview

Discover the DL-5147-041 by Onsemi, a top-tier manufacturer in the laser diode industry. This cutting-edge product offers unparalleled quality and reliability, making it perfect for a wide range of applications. From medical devices to industrial equipment, this laser diode provides exceptional performance and precision. With a maximum forward current of 0.11 A and peak wavelength of 655 nm, customers can trust in the superior functionality of this device. Elevate your projects with the DL-5147-041 and experience the value and innovation that Onsemi brings to the table.

Feature Benefit Bullets

Maximum Forward Current: 0.11 A

Low forward current consumption allows for efficient power usage and longer battery life, making this product environmentally friendly.

Peak Wavelength (nm): 655

The specific wavelength of 655nm is ideal for various applications such as telecommunications, medical equipment, and industrial processes.

Optoelectronic Type: LASER DIODE

Being a laser diode, this product offers high output power, efficiency, and stability, making it a reliable choice for precise laser applications.

Maximum Operating Temperature: 60 °C

With a high maximum operating temperature of 60 °C, this laser diode can withstand harsh environmental conditions without compromising performance.

Minimum Operating Temperature: -10 °C

The ability to operate in temperatures as low as -10 °C ensures reliable performance in a wide range of operating environments.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature provides a secure and stable connection, making installation and integration into electronic systems easier and more efficient.

Maximum Forward Voltage: 2.8 V

The low forward voltage requirement of 2.8V ensures efficient power consumption and compatibility with various power sources, making this laser diode versatile and cost-effective.

Technical Specifications

Laser Diodes DL-5147-041 attributes and parameters. Explore more Laser Diodes devices from Onsemi

Specs

Maximum Forward Current:

.11 A

Maximum Forward Voltage:

2.8 V

Mounting Feature:

Maximum Operating Temperature:

60 Cel

Minimum Operating Temperature:

-10 Cel

Optoelectronic Type:

Peak Wavelength (nm):

655

Sub-Category:

Laser Diodes

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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