Loading...

MTFC32GAZAQHD-AIT

Micron Technology

MTFC32GAZAQHD-AIT by Micron Technology

Micron Technology's MTFC32GAZAQHD-AIT is a 32GX8 NAND flash memory with 34359738368 words capacity. Operating at 1.8V, it offers a clock frequency of up to 200MHz and industrial temperature grade suitability. Ideal for applications requiring high-density storage in automotive electronics and industrial devices.

Median Price

$28.500

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 270 parts In-Stock

1+ parts

$17.960

100+ parts

$17.960

1k+ parts

$16.680

10k+ parts

-

270

$17.960

$17.960

$16.680

-

Arrow

USA . 899 parts In-Stock

1+ parts

$23.710

100+ parts

-

1k+ parts

-

10k+ parts

-

899

$23.710

-

-

-

Verical

USA . 899 parts In-Stock

1+ parts

$23.710

100+ parts

-

1k+ parts

-

10k+ parts

-

899

$23.710

-

-

-

Mouser Electronics

USA . 6 parts In-Stock

1+ parts

$33.290

100+ parts

-

1k+ parts

-

10k+ parts

-

6

$33.290

-

-

-

Farnell

UK . 1,714 parts In-Stock

1+ parts

$64.570

100+ parts

-

1k+ parts

-

10k+ parts

-

1,714

$64.570

-

-

-

Element14

Singapore . 1,800 parts In-Stock

1+ parts

$78.680

100+ parts

-

1k+ parts

-

10k+ parts

-

1,800

$78.680

-

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,103 parts In-Stock

1+ parts

$15.960

100+ parts

-

1k+ parts

-

10k+ parts

-

1,103

$15.960

-

-

-

Nova Conductors

Japan . 500 parts In-Stock

1+ parts

$21.948

100+ parts

-

1k+ parts

-

10k+ parts

-

500

$21.948

-

-

-

Bristol Electronics

USA . 34 parts In-Stock

1+ parts

$39.600

100+ parts

$36.551

1k+ parts

-

10k+ parts

-

34

$39.600

$36.551

-

-

Vyrian

USA . 927 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

927

-

-

-

-

Chip Stock

USA . 321 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

321

-

-

-

-

ComSIT Distribution GmbH

Germany . 40 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

40

-

-

-

-

ComSIT USA

USA . 40 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

40

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 2,297 parts In-Stock

1+ parts

$15.120

100+ parts

-

1k+ parts

-

10k+ parts

-

2,297

$15.120

-

-

-

Continental Prestige Electronics

USA . 1,967 parts In-Stock

1+ parts

$19.280

100+ parts

$15.440

1k+ parts

-

10k+ parts

-

1,967

$19.280

$15.440

-

-

Ampacity Inc.

Singapore . 1,070 parts In-Stock

1+ parts

$31.080

100+ parts

-

1k+ parts

-

10k+ parts

-

1,070

$31.080

-

-

-

GreenTree Electronics

Israel . 1,520 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,520

-

-

-

-

Formix International (Excess)

India . 1,520 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,520

-

-

-

-

Infinite Electronics LLP (Excess)

. 837 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

837

-

-

-

-

Argo Parts USA

USA . 516 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

516

-

-

-

-

Netroflash

USA . 50 parts In-Stock

1+ parts

-

100+ parts

$21.510

1k+ parts

$20.851

10k+ parts

$20.412

50

-

$21.510

$20.851

$20.412

Overview

Discover the cutting-edge MTFC32GAZAQHD-AIT by Micron Technology, a top-of-the-line flash memory solution that delivers unparalleled performance and reliability. As a trusted leader in the industry, Micron Technology ensures superior quality and innovation in every product they create. Ideal for a wide range of applications, this flash memory offers customers unmatched value, benefits, and advantages. Experience lightning-fast speeds, secure data storage, and seamless integration with Micron's state-of-the-art technology. Upgrade your system with the MTFC32GAZAQHD-AIT and unlock endless possibilities today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides a durable and lightweight housing for the flash memory, making it suitable for various applications.

Screening Level: AEC-Q100

Ensures high reliability and quality standards, making it ideal for automotive and other demanding environments.

Operating Mode: SYNCHRONOUS

Allows for faster data transfer speeds and better performance compared to asynchronous operation.

Nominal Supply Voltage (Vsup): 1.8V

Optimized voltage level for efficient power consumption and reliable operation.

Maximum Operating Temperature: 85°C

Ensures the flash memory can operate effectively even in high-temperature environments.

Type: NAND TYPE

NAND flash memory technology offers high storage capacity and fast read/write speeds, suitable for a variety of applications.

Technology: CMOS

CMOS technology enables low power consumption and high integration, making the flash memory energy-efficient and compact.

Technical Specifications

Flash Memory MTFC32GAZAQHD-AIT attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Clock Frequency (fCLK):

200 MHz

JESD-30 Code:

R-PBGA-B153

Length:

13 mm

Memory Density:

274877906944 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

153

No. of Words:

34359738368 words

No. of Words Code:

32G

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

32GX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA153,14X14,20

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Programming Voltage (V):

1.8

Screening Level:

AEC-Q100

Maximum Seated Height:

.9 mm

Maximum Supply Voltage (Vsup):

1.95 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.5 mm

Terminal Position:

BOTTOM

Type:

NAND TYPE

Width:

11.5 mm

Trade Compliance

MTFC32GAZAQHD-AIT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20