Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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CE2A3Q-T-AZ
Renesas Electronics
NPN; Surface Mount: NO; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 2 A; Minimum DC Current Gain (hFE): 500; No. of Elements: 1;
2 A
500
1
NPN
1 W
BIP General Purpose Small Signal
NO
SILICON
2SC2655L-Y-AP
Micro Commercial Components
2SC2655L-Y-AP by Micro Commercial Components is a NPN BJT transistor with hFE of 120, VCE of 50V, and IC of 2A. It is commonly used in small signal applications due to its silicon element material and fT of 100MHz. The package style is cylindrical with through-hole terminals.
50 V
SINGLE
120
TO-92
O-PBCY-T3
3
PLASTIC/EPOXY
ROUND
CYLINDRICAL
THROUGH-HOLE
BOTTOM
100 MHz
2SAR553PFRAT100
ROHM
ROHM 2SAR553PFRAT100 is a PNP BJT transistor with hFE of 180, VCE of 50V, and IC of 2A. Ideal for switching applications in automotive electronics due to AEC-Q101 standard compliance and fT of 320MHz.
COLLECTOR
180
R-PSSO-F3
RECTANGULAR
SMALL OUTLINE
260
PNP
AEC-Q101
YES
FLAT
10
SWITCHING
320 MHz
2SCR512PFRAT100
ROHM's 2SCR512PFRAT100 is a NPN BJT transistor with hFE of 200, VCE of 30V, and IC of 2A. Ideal for switching applications in automotive electronics due to AEC-Q101 compliance and fT of 320MHz.
30 V
200
ZTX651QSTZ
Diodes Incorporated
ZTX651QSTZ by Diodes Inc. is a NPN BJT with 1.5W power dissipation, 100 hFE, and 2A collector current. Ideal for applications requiring high-speed switching in temperatures up to 200°C such as amplifiers and signal processing circuits.
100
e3
200 Cel
1.5 W
Other Transistors
MATTE TIN
30
140 MHz
2SA2205-E
Onsemi
The Onsemi 2SA2205-E is a PNP BJT transistor with hFE of 200, VCE of 100V, and IC of 2A. Ideal for switching applications, it operates up to 150 °C. Its silicon element and through-hole terminals make it suitable for high-frequency (300MHz) in-line package designs.
100 V
TO-251
R-PSIP-T3
e6
150 Cel
IN-LINE
Tin/Bismuth (Sn/Bi)
300 MHz
2SA2127-AE
2SA2127-AE by Onsemi is a PNP BJT transistor with max. power dissipation of 1W, max. collector-emitter voltage of 50V, and max. collector current of 2A. Ideal for switching applications due to its single configuration and cylindrical package style, it has a min DC current gain of 40 and operates up to 150°C.
40
TO-226AE
Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
420 MHz
ZTX753STOA
Zetex Plc
ZTX753STOA by Zetex Plc is a PNP BJT transistor for switching applications. It has VCEsat of 0.5V, hFE of 25, and IC of 2A. With a max operating temp of 200°C, it's ideal for high-power switching circuits in various electronic devices.
30 pF
25
R-PSIP-W3
2.5 W
Not Qualified
CECC
WIRE
.5 V
ZTX753STOB
ZTX753STOB by Zetex Plc is a PNP BJT transistor for switching applications. Features include VCEsat of 0.5V, hFE of 25, and IC of 2A. With a max operating temperature of 200°C, it's ideal for high-power switching circuits in various electronic devices.
RN6002
Toshiba
NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 120 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): 2 A;
BUILT IN BIAS RESISTOR
SINGLE WITH BUILT-IN RESISTOR
50
e0
.5 W
TIN LEAD
120 MHz
2SD2143TL
ROHM 2SD2143TL is a NPN BJT with Darlington configuration, built-in diode and resistor. It has max power dissipation of 10W, hFE of 1000, and operates up to 150°C. Ideal for switching applications due to its high collector current (2A) and transition frequency (80MHz).
BUILT IN BIAS RESISTANCE RATIO IS 0.0857
70 V
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
1000
R-PSSO-G2
e2
2
10 W
TIN COPPER
GULL WING
80 MHz
FMMT619-TP
FMMT619-TP by Micro Commercial Components is a NPN BJT transistor with hFE of 100, VCE of 50V, and IC of 2A. Ideal for small outline applications requiring high transition frequency up to 100MHz in surface mount configurations.
R-PDSO-G3
DUAL
2SD2153T100V
ROHM 2SD2153T100V is a NPN BJT transistor with max VCEsat of 0.5V, hFE of 820, and IC of 2A. Ideal for amplifier applications due to its high transition frequency of 110MHz and low power dissipation. Features single configuration in a small outline package suitable for surface mount technology.
25 V
820
2 W
Tin/Copper (Sn/Cu)
AMPLIFIER
110 MHz
PMEM4020ND,115
NXP Semiconductors
NPN; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 2 A; Terminal Form: GULL WING;
40 V
SINGLE WITH BUILT-IN DIODE
75
R-PDSO-G6
6
2DB1188P-13
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 120 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 2 A;
32 V
82
2DD1621T-13
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 2 A;
65
DPLS320A-7
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 215 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): 2 A;
HIGH RELIABILITY
20 V
.6 W
215 MHz
DNLS320A-7
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 220 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): 2 A;
150
220 MHz
2SC3279-L-AP
2SC3279-L-AP by Micro Commercial Components is a NPN BJT with hFE of 140 and fT of 150 MHz. It operates at up to 150°C, handles a max voltage of 10V, and max current of 2A. Ideal for small signal applications in electronics due to its high transition frequency and current capacity.
10 V
140
O-PBCY-W3
150 MHz
NSL12AWT1
NSL12AWT1 by Onsemi is a PNP BJT transistor with 6 terminals, max power dissipation of 0.65W, and max collector current of 2A. Ideal for switching applications with a min DC current gain of 100, operating up to 150 °C.
12 V
235
.65 W
Tin/Lead (Sn/Pb)
2DB1697-13
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 140 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 2 A;
270
2DB1714-13
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 2 A;
200 MHz
2DD2661-13
2DD2661-13 by Diodes Inc. is a NPN BJT transistor with max power dissipation of 2W, hFE of 270, and fT of 170MHz. Ideal for switching applications, it has a max collector-emitter voltage of 12V and max collector current of 2A. Suitable for surface mount with matte tin finish in a small outline package style.
170 MHz
MBT35200MT1G
MBT35200MT1G by Onsemi is a PNP BJT transistor with 6 terminals, capable of handling up to 2A collector current. It has a min DC current gain of 100 and operates at a max temperature of 150°C. Ideal for switching applications due to its high transition frequency of 100MHz.
35 V
1.75 W
MPS651RLRMG
MPS651RLRMG by Onsemi is a NPN BJT transistor with 3 terminals, ideal for amplifier applications. It offers a max collector-emitter voltage of 60V, max collector current of 2A, and min DC current gain of 40 (hFE). With a package style of cylindrical and max operating temp of 150 °C, it's suitable for various electronic designs.
60 V
e1
.625 W
TIN SILVER COPPER
75 MHz
MPS751G
MPS751G by Onsemi is a PNP BJT transistor with 3 terminals, ideal for amplifier applications. It has a max collector-emitter voltage of 60V, max collector current of 2A, and min DC current gain of 40. The package style is cylindrical with through-hole terminals made of tin silver copper.
MPS751RLRPG
MPS751RLRPG by Onsemi is a PNP BJT transistor with 3 terminals, max. power dissipation of 0.625W, and max. collector-emitter voltage of 60V. Ideal for amplifier applications due to its high transition frequency of 75MHz and max. collector current of 2A in a cylindrical package style.
NSL12AWT1G
NSL12AWT1G by Onsemi is a PNP BJT transistor with 6 terminals, capable of handling up to 2A collector current. It has a max operating temperature of 150 °C and a transition frequency of 100MHz. Ideal for switching applications in small outline packages.
MPS650RLRAG
MPS650RLRAG by Onsemi is a NPN BJT transistor with 40V VCEO, 2A IC, and 1.5W Ptot. Ideal for amplifier applications due to its hFE of 40 and fT of 75MHz. Packaged in cylindrical shape with through-hole terminals for easy installation.
MPS750G
MPS750G by Onsemi is a PNP BJT transistor with 3 terminals, max. power dissipation of 1.5W, and max. collector current of 2A. Ideal for amplifier applications, it has a min. DC current gain of 40 (hFE), operates up to 150 °C, and offers a nominal transition frequency of 75MHz in a cylindrical package style.
MPS750RLRPG
MPS750RLRPG by Onsemi is a PNP BJT with 40V VCEO, 2A IC, and 75MHz fT. Ideal for amplifier applications due to its 1.5W power dissipation, SILICON material, and THROUGH-HOLE terminals in a CYLINDRICAL package style. Operating up to 150 °C, it offers reliable performance in various electronic designs.
MPS751RLRAG
MPS751RLRAG by Onsemi is a PNP BJT with 3 terminals, 1.5W power dissipation, and 60V collector-emitter voltage. Ideal for amplifier applications, it has a DC current gain of 40 and operates at up to 150 °C. The transistor's SILICON element ensures reliable performance in various electronic circuits.
MPS751ZL1G
MPS751ZL1G by Onsemi is a PNP BJT transistor with 60V VCEO, 2A IC, and 75MHz fT. Ideal for amplifier applications due to its 1.5W power dissipation, hFE of 40, and operating temperature up to 150 °C. Packaged in a cylindrical body with through-hole terminals for easy installation.
DSS4220V-7
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 260 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): 2 A;
R-PDSO-F6
-55 Cel
260 MHz
.35 V
2DA1213O-13
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 160 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 2 A;
20
160 MHz
2SA1020G
2SA1020G by Onsemi is a PNP BJT with max power dissipation of 1.5W, hFE of 40, and max operating temp of 150 °C. Ideal for applications requiring a single configuration transistor with max collector-emitter voltage of 50V, such as amplifiers or signal processing circuits.
2SA1020RLRAG
2SA1020RLRAG by Onsemi is a PNP BJT with 3 terminals, max power dissipation of 1.5W, and max collector current of 2A. It operates up to 150°C, has hFE of at least 40, and fT of 100MHz. Ideal for small signal applications in electronics due to its high performance and reliability.
NST489AMT1
The Onsemi NST489AMT1 is a NPN BJT transistor with 30V VCEO and 2A IC, ideal for switching applications. It has a hFE of 200, fT of 300MHz, and can handle up to 1.75W power dissipation. With GULL WING terminals in a SMALL OUTLINE package, it operates at temperatures up to 150 °C.
BUILT-IN BIAS RESISTOR RATIO IS
STX13004
STMicroelectronics
STX13004 from STMicroelectronics is a single NPN BJT designed for switching applications. It features a max power dissipation of 2.5W, operates up to 150 °C, and supports collector-emitter voltages up to 400V. Ideal for efficient signal processing in compact designs.
400 V
ZXTN26070CV-7
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 2 A;
DSS5240Y-7
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 220 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): 2 A;
2SCR512PT100
ROHM 2SCR512PT100 is a NPN BJT transistor with max. collector-emitter voltage of 30V and max. collector current of 2A. It has a min. DC current gain of 200, making it ideal for switching applications at up to 150°C operating temperature. The small outline package with flat terminals and surface mount capability enhances its versatility in various electronic designs.
ZTX751QSTZ
ZTX751QSTZ by Diodes Inc. is a PNP BJT with 1.5W power dissipation, 100 min hFE, and 2A max IC. Ideal for applications requiring high current amplification in a single configuration at up to 200°C operating temperature.
BCP69-16/ZLF
Nexperia
Nexperia's BCP69-16/ZLF is a PNP BJT transistor with hFE of 100, VCE of 20V, and IC of 2A. Ideal for switching applications, it has a fT of 140MHz and complies with AEC-Q101 and IEC-60134 standards. The package is surface mountable with GULL WING terminals in a RECTANGULAR shape.
R-PDSO-G4
4
AEC-Q101; IEC-60134
TIN
BCP69-16/ZLX
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 140 MHz; Maximum Collector Current (IC): 2 A; Maximum Collector-Emitter Voltage: 20 V;
PBSS4240TVL
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 230 MHz; Maximum Collector Current (IC): 2 A; Package Body Material: PLASTIC/EPOXY;
TO-236AB
230 MHz
PBSS4320TVL
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): 2 A; Terminal Form: GULL WING;
220
PBSS5250XZ
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): 2 A; JESD-30 Code: R-PSSO-F3;
300
TO-243AA
NOT SPECIFIED
Tin (Sn)
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