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2 A Small Signal Bipolar Junction Transistors (BJT) 57

Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
PBSS4240ZX by Nexperia

PBSS4240ZX

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Collector Current (IC): 2 A; Case Connection: COLLECTOR;

COLLECTOR

2 A

40 V

SINGLE

300

R-PDSO-G4

e3

1

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101; IEC-60134

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

150 MHz

PBSS5220PAPSX by Nexperia

PBSS5220PAPSX

Nexperia

PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 95 MHz; Maximum Collector Current (IC): 2 A; Package Shape: SQUARE;

COLLECTOR

2 A

20 V

SEPARATE, 2 ELEMENTS

100

S-PDSO-N6

e3

1

2

6

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

PNP

AEC-Q101; IEC-60134

YES

TIN

NO LEAD

DUAL

30

SWITCHING

SILICON

95 MHz

BCP68-25/ZLF by Nexperia

BCP68-25/ZLF

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 170 MHz; Maximum Collector Current (IC): 2 A; Maximum Time At Peak Reflow Temperature (s): 30;

COLLECTOR

2 A

20 V

SINGLE

160

R-PDSO-G4

e3

1

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101; IEC-60134

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

170 MHz

BCP68-25/ZLX by Nexperia

BCP68-25/ZLX

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 170 MHz; Maximum Collector Current (IC): 2 A; Moisture Sensitivity Level (MSL): 1;

COLLECTOR

2 A

20 V

SINGLE

160

R-PDSO-G4

e3

1

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101; IEC-60134

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

170 MHz

BCP68/ZLF by Nexperia

BCP68/ZLF

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 170 MHz; Maximum Collector Current (IC): 2 A; Case Connection: COLLECTOR;

COLLECTOR

2 A

20 V

SINGLE

50

R-PDSO-G4

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

170 MHz

BCP68/ZLX by Nexperia

BCP68/ZLX

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 170 MHz; Maximum Collector Current (IC): 2 A; No. of Terminals: 4;

COLLECTOR

2 A

20 V

SINGLE

50

R-PDSO-G4

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

170 MHz

BCP68F by Nexperia

BCP68F

Nexperia

Nexperia's BCP68F is a NPN BJT transistor with hFE of 50, VCE of 20V, and IC of 2A. Ideal for switching applications in automotive electronics due to AEC-Q101 compliance and fT of 170MHz. Features GULL WING terminals in a SMALL OUTLINE package style.

COLLECTOR

2 A

20 V

SINGLE

50

R-PDSO-G4

e3

1

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101; IEC-60134

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

170 MHz

ZXPD4000DH-7 by Diodes Incorporated

ZXPD4000DH-7

Diodes Incorporated

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .9 W; Maximum Collector Current (IC): 2 A; Transistor Element Material: SILICON;

2 A

120 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

2000

S-PDSO-N8

e4

1

1

8

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

NPN

.9 W

YES

NICKEL PALLADIUM GOLD

NO LEAD

DUAL

30

AMPLIFIER

SILICON

1.5 V

2SC2655-Y(TE6,F,M) by Toshiba

2SC2655-Y(TE6,F,M)

Toshiba

The 2SC2655-Y(TE6,F,M) by Toshiba is a NPN small signal bipolar junction transistor (BJT) with a max collector-emitter voltage of 50V and a max collector current of 2A. It is commonly used for switching applications due to its low VCEsat of 0.5V.

2 A

30 pF

50 V

SINGLE

120

O-PBCY-T3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.9 W

.9 W

NO

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

100 MHz

.5 V