Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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SEF120
STMicroelectronics
STMicroelectronics' SEF120 is a N-CHANNEL FET with 8A ID and 40W power dissipation. Ideal for applications requiring high drain current and low power consumption, such as power management systems in automotive or industrial settings.
SINGLE
8 A
METAL-OXIDE SEMICONDUCTOR
1
ENHANCEMENT MODE
150 Cel
N-CHANNEL
40 W
FET General Purpose Power
NO
TK16A60W5,S4VX
Toshiba
Toshiba's TK16A60W5,S4VX is an N-CHANNEL FET with 15.8A ID, 40W power dissipation, and 150°C max operating temp. Ideal for power applications requiring high drain current and efficient heat dissipation in enhancement mode operation.
15.8 A
STF34NM60ND
STF34NM60ND by STMicroelectronics is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for switching applications. Features include 116A pulsed drain current, 345mJ avalanche energy rating, and 0.11 ohm max on resistance. Package style is flange mount with isolated case connection.
ULTRA-LOW RESISTANCE
345 mJ
ISOLATED
SINGLE WITH BUILT-IN DIODE
600 V
29 A
.11 ohm
TO-220AB
R-PSFM-T3
e3
3
PLASTIC/EPOXY
RECTANGULAR
FLANGE MOUNT
116 A
MATTE TIN
THROUGH-HOLE
SWITCHING
SILICON
NVD5806NT4G
Onsemi
NVD5806NT4G by Onsemi is a power FET with 40V DS breakdown voltage, 33A max drain current, and 0.019 ohm RDS(on). Ideal for switching applications in automotive electronics due to AEC-Q101 standard compliance. Features include single configuration with built-in diode, Gull Wing terminals, and small outline package style.
39 mJ
DRAIN
40 V
33 A
.019 ohm
R-PSSO-G2
2
175 Cel
SMALL OUTLINE
67 A
AEC-Q101
YES
TIN
GULL WING
STFI13N95K3
STFI13N95K3 by STMicroelectronics is a N-CHANNEL FET with 10A ID and 40W power dissipation. Ideal for high-power applications, it operates at up to 150 °C. Suitable for various electronic devices requiring efficient power management.
10 A
FET General Purpose Powers
STF12NK80Z
STF12NK80Z by STMicroelectronics is a N-CHANNEL FET with 10.5A max drain current and 40W power dissipation. Ideal for high-power applications, it operates at up to 150 °C, featuring METAL-OXIDE SEMICONDUCTOR tech and matte tin finish for robust performance.
10.5 A
STF25N80K5
STF25N80K5 by STMicroelectronics is a N-CHANNEL FET with 800V DS Breakdown Voltage, 78A IDM, and 0.26 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with 40W Pd max. Suitable for high-power systems requiring efficient power management.
200 mJ
800 V
19.5 A
.26 ohm
-55 Cel
78 A
RCX300N20
ROHM
ROHM's RCX300N20 is a N-CHANNEL FET with 200V DS breakdown voltage, ideal for switching applications. It features 140A max pulsed drain current and 0.0427 ohm max drain-source resistance. The transistor operates in enhancement mode with a max power dissipation of 40W, making it suitable for high-power circuits.
396 mJ
200 V
30 A
70 A
.0427 ohm
e1
260
140 A
TIN SILVER COPPER
10
ZDX080N50
ROHM ZDX080N50 is a N-CHANNEL FET with 500V DS breakdown voltage, 8A max drain current, and 0.85 ohm RDS(on). Ideal for switching applications, it operates in enhancement mode with 24A pulsed drain current. Package style: flange mount, terminal form: through-hole.
500 V
.85 ohm
24 A
IPD50R800CEBTMA1
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 40 W; JESD-30 Code: R-PSSO-G2; Maximum Drain-Source On Resistance: .8 ohm;
83 mJ
5 A
.8 ohm
TO-252
NOT SPECIFIED
15.5 A
BFL4007-1E
BFL4007-1E by Onsemi is a N-CHANNEL Power FET with 8.7A ID and 40W power dissipation. Ideal for applications requiring high drain current capability, such as power supplies and motor control systems. Operating up to 150 °C, it features METAL-OXIDE SEMICONDUCTOR technology and TIN terminal finish.
8.7 A
BFL4037-1E
BFL4037-1E by Onsemi is a N-CHANNEL Power FET with 11A ID and 40W power dissipation. It operates at up to 150 °C, making it suitable for high-power applications in various industries. The METAL-OXIDE SEMICONDUCTOR technology ensures efficient performance in single configuration setups.
11 A
VNP35N07FI
VNP35N07FI by STMicroelectronics is an N-channel Power FET with a 60V DS breakdown voltage and 0.035 ohm max RDS(on). It operates in enhancement mode with 800ns turn-on time and 1350ns turn-off time. Ideal for power management applications requiring high efficiency and performance.
COMPLEX
60 V
.035 ohm
1350 ns
800 ns
IRF640FP
STMicroelectronics' IRF640FP is a N-CHANNEL Power FET with 200V DS Breakdown Voltage, ideal for SWITCHING applications. It features 72A Max Pulsed Drain Current, 280mJ Avalanche Energy Rating, and 0.18 ohm Drain-Source On Resistance. The transistor operates in ENHANCEMENT MODE with a max power dissipation of 40W at 150 °C.
280 mJ
18 A
.18 ohm
72 A
Not Qualified
STD30NF03LT4
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 40 W; Peak Reflow Temperature (C): 260; Qualification: Not Qualified;
LOW THRESHOLD
100 mJ
30 V
120 A
Matte Tin (Sn) - annealed
30
STD10PF06T4
STD10PF06T4 by STMicroelectronics is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 40A IDM and 125mJ EAS, operating in ENHANCEMENT MODE. With a compact RECTANGULAR package style and Matte Tin finish, it offers high performance in various power management systems.
125 mJ
.2 ohm
TO-252AA
P-CHANNEL
40 A
Other Transistors
Matte Tin (Sn)
STF16NK60Z
STF16NK60Z by STMicroelectronics is a N-CHANNEL FET with 620V DS Breakdown Voltage, ideal for SWITCHING applications. It features 56A IDM and 0.42 ohm RDS(on), operating in ENHANCEMENT MODE at up to 150 °C. The transistor's package is RECTANGULAR with THROUGH-HOLE terminals, offering 40W Pdiss and EAS of 360mJ.
360 mJ
620 V
14 A
.42 ohm
56 A
STF20NM65N
STF20NM65N by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 650V breakdown voltage, 60A max pulsed drain current, and operates at up to 150 °C. Ideal for power management in various electronic devices.
AVALANCHE RATED
115 mJ
650 V
19 A
15 A
.27 ohm
60 A
BUZ73AH
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 40 W; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY;
120 mJ
5.5 A
.6 ohm
22 A
STF25NM60ND
STF25NM60ND from STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 600V breakdown voltage, 21A max drain current, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.
850 mJ
21 A
.16 ohm
84 A
STF30NM60ND
STF30NM60ND by STMicroelectronics is an N-channel FET designed for switching applications, featuring a 600V breakdown voltage and 100A max pulsed drain current. It operates in enhancement mode with a max power dissipation of 40W. Ideal for high-efficiency power management solutions.
900 mJ
25 A
.385 ohm
100 A
STF30NM60N
STF30NM60N by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 600V breakdown voltage, 100A max pulsed drain current, and operates at up to 150 °C. Ideal for power management in various electronic devices.
.13 ohm
STF24NM65N
STF24NM65N by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 650V breakdown voltage, 76A max pulsed drain current, and operates at up to 150 °C. Ideal for power management in various electronic devices.
500 mJ
.19 ohm
76 A
STP16NS25FP
STP16NS25FP by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a max drain current of 16 A, a breakdown voltage of 250 V, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.
600 mJ
250 V
16 A
.28 ohm
64 A
STD10PF06-1
STD10PF06-1 from STMicroelectronics is a P-channel FET designed for switching applications, featuring a max drain current of 10 A and a breakdown voltage of 60 V. It operates in enhancement mode with low on-resistance of 0.2 Ω. Ideal for efficient power management in compact designs.
TO-251AA
R-PSIP-T3
IN-LINE
STP15NK50ZFP
STP15NK50ZFP by STMicroelectronics is a N-CHANNEL FET with 500V DS breakdown voltage and 56A pulsed drain current. Ideal for switching applications, it operates in enhancement mode with 40W power dissipation and -50 to 150°C temperature range.
HIGH VOLTAGE
300 mJ
.34 ohm
-50 Cel
STD38NH02LT4
STD38NH02LT4 by STMicroelectronics is an N-channel MOSFET designed for efficient switching applications. It features a max drain current of 38 A, a breakdown voltage of 24 V, and operates at up to 175 °C. Ideal for compact power management in electronics.
LOGIC LEVEL COMPATIBLE, LOW THRESHOLD
250 mJ
24 V
38 A
.0135 ohm
152 A
STD38NH02L-1
STD38NH02L-1 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 38 A, a breakdown voltage of 24 V, and operates at up to 175 °C. Ideal for power management in various electronic devices.
TO-251
STF17N62K3
STF17N62K3 by STMicroelectronics is an N-channel MOSFET designed for efficient switching applications. It features a 620V breakdown voltage, 60A max pulsed drain current, and operates at up to 150 °C. Ideal for power management in various electronic devices.
AVALANCHE ENERGY RATED
315 mJ
.38 ohm
STF42N65M5
STF42N65M5 by STMicroelectronics is a N-CHANNEL FET with 650V DS Breakdown Voltage, 132A IDM, and 0.079 ohm RDS(on). Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation. Package style is FLANGE MOUNT with ISOLATED case connection.
950 mJ
.079 ohm
132 A
STF30NM50N
STF30NM50N by STMicroelectronics is an N-channel FET ideal for switching applications, featuring a 500V breakdown voltage and 27A max drain current. It operates in enhancement mode with a low on-resistance of 0.115Ω. This robust transistor supports high power dissipation up to 40W.
27 A
.115 ohm
108 A
STF35N65M5
STF35N65M5 from STMicroelectronics is an N-channel MOSFET ideal for switching applications. It features a 650V breakdown voltage, 27A max drain current, and 40W power dissipation. This robust FET operates efficiently in high-temperature environments up to 150 °C.
800 mJ
.098 ohm
MTP10N10ELG
MTP10N10ELG by Onsemi is a N-CHANNEL Power FET with 100V DS Breakdown Voltage. It features a single configuration with built-in diode, suitable for switching applications. With 35A IDM and 40W Pd, it operates in enhancement mode at up to 150 °C, making it ideal for high-power requirements.
50 mJ
100 V
.22 ohm
35 A
MTD5P06VT4G
MTD5P06VT4G by Onsemi is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 18A IDM, 125mJ EAS, and 0.45 ohm RDS(ON). With a max power dissipation of 40W and operating temp of 175°C, it's suitable for various high-power electronic designs.
.45 ohm
40
MLD1N06CLT4G
MLD1N06CLT4G by Onsemi is a N-CHANNEL Power FET with 59V DS Breakdown Voltage and 1.8A Pulsed Drain Current, ideal for SWITCHING applications. It features a SINGLE configuration with built-in BIPOLAR TRANSISTOR, DIODE, and RESISTOR in a PLASTIC/EPOXY package. Operating in ENHANCEMENT MODE, it has a max power dissipation of 40W at 150 °C temperature.
LOGIC LEVEL COMPATIBLE
80 mJ
SINGLE WITH BUILT-IN BIPOLAR TRANSISTOR, DIODE AND RESISTOR
59 V
2 A
1 A
.75 ohm
1.8 A
Tin (Sn)
STF20NK50Z
STF20NK50Z by STMicroelectronics is an N-channel FET ideal for switching applications, featuring a 500V breakdown voltage and 68A max pulsed drain current. It operates in enhancement mode with a low on-resistance of 0.27Ω. This versatile transistor suits various power management needs.
17 A
68 A
STF25NM50N
STF25NM50N by STMicroelectronics is an N-channel FET ideal for switching applications, featuring a 500V breakdown voltage and 22A max drain current. It operates in enhancement mode with a low on-resistance of 0.14Ω. This robust transistor supports high power dissipation up to 40W.
350 mJ
.14 ohm
88 A
NTD5806NT4G
NTD5806NT4G by Onsemi is an N-channel Power FET with 40V DS breakdown voltage, 65A IDM, and 0.019 ohm RDS(on). Ideal for switching applications, it features a built-in diode in a small outline package suitable for surface mount technology. Operating in enhancement mode, this MOSFET has a max power dissipation of 40W at 175 °C.
38 mJ
65 A
MLD2N06CLT4G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN BIPOLAR TRANSISTOR, DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 40 W; Package Body Material: PLASTIC/EPOXY; Peak Reflow Temperature (C): 260;
LOGIC LEVEL COMPATIBLE, OVERVOLTAGE CLAMPED PROTECTION
58 V
.4 ohm
STF40N20
STF40N20 by STMicroelectronics is an N-channel MOSFET ideal for switching applications. It features a max drain current of 40 A, a breakdown voltage of 200 V, and operates at up to 150 °C. Its compact design ensures efficient performance in power management systems.
230 mJ
.045 ohm
160 A
STFV4N150
STFV4N150 by STMicroelectronics is an N-channel FET designed for switching applications. It features a 1500V breakdown voltage, 12A max pulsed drain current, and operates at up to 150 °C. Ideal for high-voltage power management in various electronic devices.
1500 V
4 A
7 ohm
12 A
STF34NM60N
STF34NM60N by STMicroelectronics is an N-channel MOSFET ideal for switching applications, featuring a 600V breakdown voltage and max drain current of 29A. It offers low on-resistance of 0.105Ω and operates up to 150 °C. Perfect for high-efficiency power management solutions.
.105 ohm
DMN90H2D2HCTI
Diodes Incorporated
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 40 W; Case Connection: ISOLATED; Operating Mode: ENHANCEMENT MODE;
900 V
6 A
2.2 ohm
NTD5C464NT4G
NTD5C464NT4G by Onsemi is an N-channel Power FET with a 40V DS breakdown voltage and 59A max drain current. Ideal for applications requiring high power dissipation, such as motor control systems or power supplies. Features include a built-in diode, small outline package style, and -55 to 175 °C operating temperature range.
136 mJ
59 A
.0058 ohm
320 A
FDMC4D9P20X8
FDMC4D9P20X8 by Onsemi is a P-CHANNEL Power FET with 20V DS Breakdown Voltage, 335A IDM, and 0.0049 ohm RDS(ON). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 40W.
54 mJ
20 V
75 A
.0049 ohm
1455 pF
MO-240BA
S-PDSO-N8
8
SQUARE
335 A
NO LEAD
DUAL
781 ns
54 ns
2SK3798(STA4,Q,M)
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 40 W; Maximum Drain Current (Abs) (ID): 4 A; Maximum Pulsed Drain Current (IDM): 12 A;
3.5 ohm
TK5A90E,S4X
Toshiba's TK5A90E,S4X is a N-CHANNEL FET with 900V DS Breakdown Voltage, ideal for SWITCHING applications. It features 13.5A IDM and 202mJ EAS, ensuring efficient power handling. With a max operating temperature of 150°C and 40W power dissipation, it offers reliable performance in various environments.
202 mJ
4.5 A
3.1 ohm
8 pF
13.5 A
DMN10H220LDV-13
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 40 W; JESD-609 Code: e3; Maximum Pulsed Drain Current (IDM): 42 A;
1.1 mJ
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
.222 ohm
12 pF
S-PDSO-F8
42 A
FLAT
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