Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 40 W; JESD-609 Code: e3; Maximum Pulsed Drain Current (IDM): 42 A;
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Power Field Effect Transistors (FET) DMN10H220LDV-13 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Diodes Incorporated
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DMN10H220LDV-13 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.
Chairman and CEO
Keh-Shew Lu
CFO
Brett R. Whitmire
Lead Director
Angie Chen Button
Fab 1
Fabrication
Fab Initiation
1987
China
Shanghai
Wafer Capacity
40,000
Zizhu Fab 1
2013
18,500
G Fab
2008
UK
Greenock
8,000
Keelung Fab
1990
Taiwan
Keelung
58,000
Wuxi Fab
2004
Wuxi
190,000
Shanghai Fab
1993
110,000
1970
22,000
Hsinchu Fab
1998
Hsinchu
38,000
Fab 2
2003
20,000
SPFAB
1995
USA
South Portland
17,000
N/A
1982
Oldham
4,000
NE555D
NXP Semiconductors
SQUARE; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: LSOP; Package Shape: RECTANGULAR; Surface Mount: YES;
SMBJ18CA
Meritek Electronics
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
M24308/2-1F
Cinch Connectivity Solutions
D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; Dielectric Withstanding Voltage (V): 1750VAC; No. of Connectors: ONE; Body Depth: .375 inch;
RC0603FR-0710KL
Yageo
Yageo's RC0603FR-0710KL is a fixed resistor with 10000 ohm resistance, 1% tolerance, and 0.1 W power dissipation. It operates b/w -55 to 155 °C and is ideal for surface mount applications in electronics requiring precise resistance values.
06035C103KAT2A
KYOCERA AVX
06035C103KAT2A by KYOCERA AVX is a SMT ceramic capacitor with 0.01uF capacitance and 50V URdc. It has X7R temperature characteristics, -55 to 125 °C operating range, and 10% tolerance. Ideal for applications requiring compact surface mount capacitors with stable performance in a wide temperature range.
LM107H/883
Linear Technology
OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Technology: BIPOLAR;
IRLML6401TRPBF
Infineon Technologies
IRLML6401TRPBF by Infineon is a P-CHANNEL FET for SWITCHING applications. It features a 12V DS Breakdown Voltage, 34A IDM, and 0.05ohm RDS(on). With a small outline package style, it operates in an ambient temperature range of -55 to 150 °C.
M39029/58-360
TE Connectivity
TE Connectivity's M39029/58-360 is a CRIMP terminal backshell for 22-28 AWG wires, rated at 5A. Ideal for male contacts in Mil-Spec applications, it offers a cross-section area of 0.34 mm2 and ensures secure connections in demanding environments.
DP83848IVVX/NOPB
Texas Instruments
Texas Instruments DP83848IVVX/NOPB is a 3.3V Ethernet transceiver with 100000 Mbps data rate, suitable for industrial applications. It features CMOS technology, operates b/w -40 to 85 °C, and comes in a low profile flatpack package with matte tin finish.
2N2222A
STMicroelectronics
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .6 A;
SBAV99LT1G
Onsemi
SBAV99LT1G by Onsemi is a rectifier diode with a max repetitive peak reverse voltage of 100V. It has a small outline package style and a fast max reverse recovery time of 0.006 us. It is commonly used in applications requiring low power dissipation and high operating temperatures.
Air Electro
D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; Mating Info.: MULTIPLE MATING PARTS AVAILABLE; MIL Conformity: YES; Additional Features: STANDARD: MIL-DTL-24308;
STM32F401CDY6TR
STM32F401CDY6TR by STMicroelectronics is a 32-bit microcontroller with 393216 ROM words, 50 MHz clock frequency, and 36 I/O lines. It is used in applications requiring high-speed processing, such as industrial automation and consumer electronics.
BSS138
Vishay Intertechnology
Vishay Intertechnology's BSS138 is a N-CHANNEL FET with SINGLE configuration and ENHANCEMENT MODE operation. It features 0.35W power dissipation, METAL-OXIDE SEMICONDUCTOR tech, and 150°C max temp. Ideal for surface mount applications in various electronic circuits requiring efficient power management.
2N7002
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .83 W; JESD-609 Code: e3; Minimum DS Breakdown Voltage: 60 V;
261
Micronetics
Other Interface ICs; Temperature Grade: MILITARY; Terminal Form: FLAT; No. of Terminals: 14; Package Code: DFP; Package Shape: SQUARE;
Microsemi
Inter F E T
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Drain-Source On Resistance: 7.5 ohm; Maximum Drain Current (Abs) (ID): .115 A;
SS14
Bytesonic Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BAV99
Sangdest Microelectronics (Nanjing)
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
FDD7N25LZTM
Fairchild Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 56 W; Package Body Material: PLASTIC/EPOXY; Transistor Element Material: SILICON;
STS4DNF60L
STS4DNF60L by STMicroelectronics is a N-CHANNEL FET with 60V DS Breakdown Voltage, 16A IDM, and 0.065 ohm RDS(on). Ideal for SWITCHING applications, it features ENHANCEMENT MODE operation in a SMALL OUTLINE package. Operating at up to 150°C, it offers high power dissipation and avalanche energy rating.
PSMN5R5-60YS,115
The NXP Semiconductors PSMN5R5-60YS,115 is a single N-channel power FET with 100A max drain current and 130W max power dissipation. Ideal for applications requiring high-power handling in enhancement mode operation, such as industrial motor control and power supplies.
IRF540ZLPBF
IRF540ZLPBF by Infineon is a N-CHANNEL FET with 100V DS Breakdown Voltage and 140A IDM. Ideal for SWITCHING applications, it has a max power dissipation of 92W and 0.0265 ohm Drain-Source On Resistance. Operating at up to 175°C, it features a METAL-OXIDE SEMICONDUCTOR technology in an IN-LINE package style.
JANTX2N6796
JANTX2N6796 by Infineon Technologies is a N-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 32A IDM, 75mJ EAS, and 0.195 ohm RDS(on). Operating from -55 to 150 °C, it has a max power dissipation of 25W in a CYLINDRICAL package.
IRFL9014TRPBF
Vishay Intertechnology's IRFL9014TRPBF is a N-CHANNEL Power FET with 60V DS Breakdown Voltage and 14A IDM. Ideal for SWITCHING applications, it features a built-in DIODE, operates in ENHANCEMENT MODE, and has a max power dissipation of 3.1W.
FDD4685-F085P
FDD4685-F085P by Onsemi is a P-CHANNEL Power FET with 40V DS Breakdown Voltage and 32A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, operates in ENHANCEMENT MODE, and has an Avalanche Energy Rating of 121mJ.
Siliconix
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Drain Current (ID): .115 A; Operating Mode: ENHANCEMENT MODE;
FDMS86101A
FDMS86101A by Onsemi is a N-CHANNEL Power FET with 100V DS Breakdown Voltage and 180A IDM. Ideal for SWITCHING applications, it features a built-in DIODE, 0.008 ohm RDS(on), and 104W Pdiss. Suitable for surface mount with 5 terminals in a RECTANGULAR package style.
IRF7103TRPBF-1
Power Field-Effect Transistors; Moisture Sensitivity Level (MSL): 1;
SIR872ADP-T1-GE3
Vishay Intertechnology's SIR872ADP-T1-GE3 is a N-channel FET with 150V DS breakdown voltage and 100A max pulsed drain current. Ideal for switching applications, it features a built-in diode, 0.018 ohm max drain-source resistance, and operates in enhancement mode.
SI7232DN-T1-GE3
Vishay Intertechnology's SI7232DN-T1-GE3 is an N-channel Power FET with 2 elements, built-in diode, and a max drain current of 25A. Ideal for switching applications, it operates in enhancement mode with a min DS breakdown voltage of 20V. With a package style of small outline and matte tin terminal finish, it offers high performance in a compact design.
IRFH4251DTRPBF
International Rectifier
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 63 W; Case Connection: SOURCE; Maximum Drain Current (Abs) (ID): 188 A;
MCH3406-TL-E
MCH3406-TL-E by Onsemi is a N-CHANNEL FET with 3A max drain current and 1W max power dissipation. Ideal for applications requiring high efficiency in a single configuration, such as power management systems. Operating in enhancement mode, it can handle up to 150°C temperature with surface mount capability.
IRLR3110ZTRPBF
IRLR3110ZTRPBF by Infineon is a N-CHANNEL FET with 100V DS breakdown voltage, ideal for switching applications. It features a single configuration with built-in diode, capable of handling up to 250A pulsed drain current. With 0.014 ohm max on-resistance and 175°C max operating temp, it's suitable for high-power systems.
FQD16N25CTM
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 160 W; Avalanche Energy Rating (EAS): 432 mJ; Moisture Sensitivity Level (MSL): 1;
IRFZ44NPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 94 W; JESD-30 Code: R-PSFM-T3; Qualification: Not Qualified;
Power Field-Effect Transistors;
IRFR7440TRPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 140 W; Minimum Operating Temperature: -55 Cel; Maximum Pulsed Drain Current (IDM): 760 A;
NTF6P02T3G
NTF6P02T3G by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage, 35A IDM, and 0.05 ohm RDS(ON). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 8.3W.
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DMN10H220L-7
Diodes Incorporated
Power Field-Effect Transistors; JESD-609 Code: e3; Terminal Finish: MATTE TIN; Moisture Sensitivity Level (MSL): 1; Maximum Time At Peak Reflow Temperature (s): 30; Peak Reflow Temperature (C): 260;
DMN1019USN-7
DMN1019USN-7 by Diodes Inc. is a N-channel power FET with a min DS breakdown voltage of 12V and max drain current of 9.3A. It is used for switching applications in small outline packages, operating at temperatures up to 150°C.
DMN10H220LPDW-13
Power Field-Effect Transistors; Moisture Sensitivity Level (MSL): 1; Peak Reflow Temperature (C): 260; Terminal Finish: MATTE TIN; JESD-609 Code: e3;
DMN1019USN-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.2 W; Transistor Element Material: SILICON; Terminal Position: DUAL;
DMN10H220LQ-7
DMN10H220LQ-7 by Diodes Inc. is a N-channel FET with 100V DS breakdown voltage and 0.22 ohm max on-resistance, ideal for switching applications. It features single configuration with built-in diode, 8A pulsed drain current, and operates in enhancement mode. This MOSFET has a small outline package style, -55 to 150 °C operating temp range, and meets AEC-Q101 & MIL-STD-202 standards.
DMN10H100SK3-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Pulsed Drain Current (IDM): 16 A; No. of Elements: 1; Maximum Drain Current (ID): 14 A;
DMN10H170SK3-13
DMN10H170SK3-13 by Diodes Inc. is a N-channel FET with 100V DS breakdown voltage, 16A pulsed drain current, and 0.16 ohm max on-resistance. Ideal for switching applications in automotive electronics due to AEC-Q101 standard compliance and 150°C operating temperature.
DMN10H120SE-13
DMN10H120SE-13 by Diodes Inc. is a N-channel Power FET with 100V DS breakdown voltage and 16A max pulsed drain current. It is used for switching applications in enhancement mode, featuring a single configuration with built-in diode. The transistor has 0.11 ohm max drain-source resistance and operates in small outline package style.
DMN10H220LFVW-7
DMN10H220LFVW-7 by Diodes Inc. is a N-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 44A IDM, 1.1mJ EAS, and 0.222 ohm Drain-Source On Resistance. Operates in -55 to 150 °C with Matte Tin finish and DUAL Terminal Position.
DMN10H220LVT-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.67 W; Reference Standard: MIL-STD-202; JESD-609 Code: e3;
DMN10H220LDV-7
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 40 W; JESD-30 Code: S-PDSO-F8; Avalanche Energy Rating (EAS): 1.1 mJ;
DMN10H099SFG-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.31 W; Maximum Pulsed Drain Current (IDM): 20 A; No. of Elements: 1;
DMN10H099SFG-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.31 W; Package Shape: SQUARE; Maximum Operating Temperature: 150 Cel;
DMN10H099SK3-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PSSO-G2; Maximum Drain-Source On Resistance: .08 ohm; Moisture Sensitivity Level (MSL): 1;
DMN10H170SVT-7
DMN10H170SVT-7 by Diodes Inc. is a N-channel FET with 100V DS breakdown voltage, 11.2A IDM, and 0.2 ohm RDS(on). Ideal for switching applications in small outline packages, it operates b/w -55 to 150°C with MIL-STD-202 compliance.
DMN10H220LK3-13
Power Field-Effect Transistors; Terminal Finish: MATTE TIN; Peak Reflow Temperature (C): 260; JESD-609 Code: e3;
DMN10H170SK3Q-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 42 W; Package Shape: RECTANGULAR; Reference Standard: AEC-Q101; MIL-STD-202;
DMN10H220LE-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; No. of Elements: 1; Peak Reflow Temperature (C): 260;
DMN15H310SK3-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JEDEC-95 Code: TO-252; Maximum Pulsed Drain Current (IDM): 10 A; Package Body Material: PLASTIC/EPOXY;
DMN10H220L-13
Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; JESD-609 Code: e3; Maximum Time At Peak Reflow Temperature (s): 30; Moisture Sensitivity Level (MSL): 1; Terminal Finish: MATTE TIN;
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