Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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STB27NM60ND
STMicroelectronics
STB27NM60ND by STMicroelectronics is a N-CHANNEL FET with 21A max drain current and 160W power dissipation. Ideal for applications requiring high power handling, such as motor control systems or power supplies. Operating temp up to 150°C makes it suitable for industrial environments.
SINGLE
21 A
METAL-OXIDE SEMICONDUCTOR
e3
1
150 Cel
245
N-CHANNEL
160 W
FET General Purpose Power
YES
MATTE TIN
30
STW3N170
STW3N170 by STMicroelectronics is a N-CHANNEL FET with 2.3A max drain current and 160W power dissipation. Ideal for high-power applications, it operates at up to 150°C, making it suitable for various industrial and automotive uses.
2.3 A
NOT SPECIFIED
FET General Purpose Powers
NO
STW40NF20
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 160 W; No. of Elements: 1; Maximum Drain-Source On Resistance: .045 ohm;
230 mJ
DRAIN
SINGLE WITH BUILT-IN DIODE
200 V
40 A
.045 ohm
TO-247
R-PSFM-T3
3
ENHANCEMENT MODE
PLASTIC/EPOXY
RECTANGULAR
FLANGE MOUNT
160 A
Not Qualified
THROUGH-HOLE
SWITCHING
SILICON
STP5N120
STP5N120 from STMicroelectronics is an N-channel FET ideal for switching applications. It features a 1200V breakdown voltage, 4.7A max drain current, and operates at up to 150 °C. This versatile transistor is suitable for high-power circuits in various electronic devices.
400 mJ
1200 V
4.4 A
4.7 A
3.5 ohm
TO-220AB
18.8 A
STP30NM30N
STP30NM30N from STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a max drain current of 30 A, breakdown voltage of 300 V, and power dissipation up to 160 W. Ideal for high-efficiency circuits in various electronic devices.
900 mJ
300 V
30 A
.09 ohm
120 A
TIN
STB50NF25
STB50NF25 from STMicroelectronics is a robust N-channel FET designed for efficient switching applications. It features a max drain current of 45 A, a breakdown voltage of 250 V, and operates at temperatures from -55 °C to 150°C. Ideal for power management in compact designs.
160 mJ
250 V
45 A
.069 ohm
R-PSSO-G2
2
-55 Cel
SMALL OUTLINE
180 A
GULL WING
STP20NM65N
STP20NM65N from STMicroelectronics is a powerful N-channel MOSFET designed for efficient switching applications. It features a 650V breakdown voltage, 19A max drain current, and 160W power dissipation. Ideal for high-performance power management in various electronic devices.
AVALANCHE RATED
115 mJ
650 V
19 A
15 A
.27 ohm
60 A
STW20NM65N
STW20NM65N by STMicroelectronics is an N-channel MOSFET ideal for switching applications, featuring a 650V breakdown voltage and 19A max drain current. It offers a low on-resistance of 0.19Ω and operates at up to 150 °C. Its robust design ensures reliable performance in demanding environments.
500 mJ
.19 ohm
e3/e1
76 A
MATTE TIN/TIN SILVER COPPER
STB25NM60ND
STB25NM60ND by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 600V breakdown voltage, 21A max drain current, and 160W power dissipation. Ideal for high-efficiency circuits in compact designs.
850 mJ
600 V
.16 ohm
TO-263AB
84 A
STI25NM60ND
STI25NM60ND from STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 600V breakdown voltage, 21A max drain current, and 160W power dissipation. Ideal for high-efficiency power management in various electronic devices.
TO-262AA
R-PSIP-T3
IN-LINE
STP25NM60ND
STP25NM60ND by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 600V breakdown voltage, 21A max drain current, and 160W power dissipation. Ideal for high-efficiency power management in various electronic devices.
STW25NM60ND
STW25NM60ND from STMicroelectronics is a powerful N-channel MOSFET designed for switching applications. It features a 600V breakdown voltage, 21A max drain current, and 160W power dissipation. Ideal for high-efficiency power management in various electronic devices.
TO-247AC
STB24NM65N
STB24NM65N by STMicroelectronics is a powerful N-channel MOSFET designed for efficient switching applications. It features a 650V breakdown voltage, 76A pulsed drain current, and operates at up to 150 °C. Ideal for high-performance power management in compact designs.
STI24NM65N
STI24NM65N by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 650V breakdown voltage, 76A max pulsed drain current, and operates at up to 150 °C. Ideal for power management in various electronic devices.
Matte Tin (Sn)
STP24NM65N
STP24NM65N by STMicroelectronics is a N-CHANNEL FET with 650V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 76A IDM, 500mJ EAS, and 0.19 ohm RDS(on). Package style is FLANGE MOUNT with SILICON element material and TIN terminal finish.
STW24NM65N
STW24NM65N by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 650V breakdown voltage, 76A max pulsed drain current, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.
STW13NK60Z
STW13NK60Z by STMicroelectronics is a N-CHANNEL Power FET with 600V DS Breakdown Voltage. Ideal for SWITCHING applications, it features 52A IDM and 0.55 ohm RDS(on). Operating in ENHANCEMENT MODE, this transistor has a max power dissipation of 160W and operates at up to 150°C.
13 A
.55 ohm
52 A
STW14NK50Z
STW14NK50Z by STMicroelectronics is a N-CHANNEL Power FET with 500V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 48A IDM, 400mJ EAS, and 0.38 ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max power dissipation of 160W at 150°C.
500 V
14 A
.38 ohm
48 A
STB12NM50FDT4
STB12NM50FDT4 from STMicroelectronics is a powerful N-channel MOSFET designed for efficient switching applications. It features a 500V breakdown voltage, 12A max drain current, and operates at up to 150 °C. Ideal for high-performance power management in compact designs.
12 A
.4 ohm
STP12NM50FD
STP12NM50FD by STMicroelectronics is a N-CHANNEL Power FET with 500V DS Breakdown Voltage. It's ideal for SWITCHING applications, featuring 48A IDM and 0.4 ohm RDS(on). Operating at up to 150°C, it offers a max power dissipation of 160W in a RECTANGULAR package.
STB15NK50ZT4
STB15NK50ZT4 from STMicroelectronics is a robust N-channel FET designed for efficient switching applications. It features a 500V breakdown voltage, 14A max drain current, and operates at up to 150 °C. Ideal for power management in compact electronic devices.
HIGH VOLTAGE
300 mJ
.34 ohm
56 A
STP14NK60Z
STP14NK60Z by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 600V breakdown voltage, 54A pulsed drain current, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.
13.5 A
.5 ohm
54 A
STW14NK60Z
STW14NK60Z by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 600V breakdown voltage, 54A pulsed drain current, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.
STW15NK50Z
STW15NK50Z by STMicroelectronics is a N-CHANNEL FET with 500V DS breakdown voltage, ideal for switching applications. It features 56A pulsed drain current and 0.34 ohm max on-resistance, ensuring efficient operation. With a max power dissipation of 160W and operating temperature up to 150°C, it offers reliable performance in various industrial settings.
STB11NM60FDT4
STB11NM60FDT4 by STMicroelectronics is a N-CHANNEL FET with 600V DS breakdown voltage, 44A IDM, and 0.45 ohm RDS(on). Ideal for switching applications, it operates in enhancement mode with 160W max power dissipation. Package style is small outline with gull wing terminals, suitable for surface mount assembly at up to 245°C peak reflow temperature.
350 mJ
11 A
.45 ohm
44 A
Matte Tin (Sn) - annealed
STB35N65M5
STB35N65M5 by STMicroelectronics is a N-CHANNEL FET with 650V DS Breakdown Voltage, 108A IDM, and 0.098 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with 27A ID and 160W Pd. Package style is SMALL OUTLINE, suitable for surface mount with GULL WING terminals.
800 mJ
ISOLATED
27 A
.098 ohm
108 A
STI35N65M5
STI35N65M5 by STMicroelectronics is an N-channel MOSFET ideal for switching applications. It features a 650V breakdown voltage, 27A max drain current, and 160W power dissipation. Its robust design ensures reliability in high-temperature environments up to 150 °C.
STP35N65M5
STP35N65M5 from STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 650V breakdown voltage, 27A max drain current, and 160W power dissipation. Ideal for high-efficiency power management in various electronic devices.
STW35N65M5
STW35N65M5 from STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 650V breakdown voltage, 27A max drain current, and 160W power dissipation. Ideal for high-efficiency power management in various electronic devices.
STP40N20
STP40N20 by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a max drain current of 40 A, breakdown voltage of 200 V, and power dissipation up to 160 W. Ideal for high-efficiency circuits in various electronic devices.
STW40N20
STW40N20 by STMicroelectronics is an N-channel FET ideal for switching applications, featuring a max drain current of 40 A and a breakdown voltage of 200 V. It offers low on-resistance at 0.045 Ω and operates up to 150 °C. This versatile transistor is suitable for high-power circuits.
STW25NM60N
STW25NM60N from STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 600V breakdown voltage, 20A max drain current, and 160W power dissipation. Ideal for high-efficiency power management in various electronic devices.
20 A
STB25NM50N-1
STB25NM50N-1 by STMicroelectronics is an N-channel MOSFET ideal for switching applications, featuring a 500V breakdown voltage and 22A max drain current. It offers a low on-resistance of 0.14Ω and operates at up to 150 °C. This versatile FET is packaged in a through-hole format for easy integration.
22 A
.14 ohm
88 A
STP25NM50N
STP25NM50N by STMicroelectronics is an N-channel MOSFET ideal for switching applications. It features a 500V breakdown voltage, 22A max drain current, and 160W power dissipation. This robust transistor operates efficiently in high-temperature environments up to 150 °C.
STW25NM50N
STW25NM50N from STMicroelectronics is an N-channel FET ideal for switching applications, featuring a 500V breakdown voltage and 22A max drain current. It offers a low on-resistance of 0.14Ω and operates at up to 150 °C. This robust transistor is perfect for high-power circuits.
STB25NM50N
STB25NM50N by STMicroelectronics is an N-channel MOSFET designed for efficient switching applications. It features a 500V breakdown voltage, 22A max drain current, and operates at up to 150 °C. Ideal for power management in various electronic devices.
STB40N20
STB40N20 by STMicroelectronics is a robust N-channel FET designed for efficient switching applications. It features a max drain current of 40 A, breakdown voltage of 200 V, and power dissipation up to 160 W. Ideal for high-performance power management in compact designs.
STW27NM60ND
STW27NM60ND from STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 600V breakdown voltage, 21A max drain current, and 160W power dissipation. Ideal for high-efficiency power management in various electronic devices.
NTHL120N60S5Z
Onsemi
NTHL120N60S5Z by Onsemi is a Power FET with 600V DS Breakdown Voltage, 81A IDM, and 0.12 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max temp of 150 °C. The transistor features a SINGLE configuration with BUILT-IN DIODE and METAL-OXIDE SEMICONDUCTOR technology.
191 mJ
28 A
.12 ohm
81 A
NTMFS5H400NLT1G
NTMFS5H400NLT1G by Onsemi is a N-CHANNEL FET with 40V DS Breakdown Voltage, 900A IDM, and 0.0011 ohm RDS(on). Ideal for power applications due to its 160W Pdiss, -55 to 150°C operating temp range, and DUAL terminal position.
360 mJ
40 V
330 A
.0011 ohm
87 pF
R-PDSO-F5
5
260
900 A
FLAT
DUAL
NTMFS5H600NLT3G
NTMFS5H600NLT3G by Onsemi is a N-CHANNEL Power FET with 60V DS Breakdown Voltage and 900A IDM. Ideal for applications requiring high power dissipation, such as automotive systems and industrial equipment due to its low on-resistance of 0.0017 ohm and max operating temperature of 150 °C.
338 mJ
60 V
250 A
.0017 ohm
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