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1 A Power Bipolar Junction Transistors (BJT) 56

Power Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Maximum Fall Time (tf) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
2STL2580 by STMicroelectronics

2STL2580

STMicroelectronics

2STL2580 by STMicroelectronics is a NPN BJT transistor with max. collector-emitter voltage of 400V and max. collector current of 1A. It has a min. DC current gain of 60, suitable for switching applications with a max. power dissipation of 1.5W in cylindrical package style for through-hole mounting at up to 150 °C operating temperature.

1 A

400 V

SINGLE

60

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

1.5 W

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

STFN42 by STMicroelectronics

STFN42

STMicroelectronics

STFN42 by STMicroelectronics is a NPN BJT transistor with 400V VCE, 1A IC, and 1.4W power dissipation. It's used for switching applications in a small outline package with matte tin terminals, operating up to 150 °C.

COLLECTOR

1 A

400 V

SINGLE

5

R-PSSO-F3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1.4 W

Other Transistors

YES

Matte Tin (Sn)

FLAT

SINGLE

30

SWITCHING

SILICON

STX0560 by STMicroelectronics

STX0560

STMicroelectronics

STX0560 by STMicroelectronics is a NPN BJT transistor with 600V VCE, 1A IC, and 1.5W power dissipation. Ideal for switching applications due to its single configuration in a cylindrical package with matte tin finish.

1 A

600 V

SINGLE

70

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

1.5 W

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

BCP5316TA by Diodes Incorporated

BCP5316TA

Diodes Incorporated

BCP5316TA by Diodes Inc. is a PNP BJT transistor for switching applications. It has a max VCEsat of 0.5V, hFE of 100, and can handle up to 1A IC. With a max operating temp of 150°C, it's ideal for automotive electronics due to AEC-Q101 compliance.

HIGH RELIABILITY

COLLECTOR

1 A

25 pF

80 V

SINGLE

100

R-PDSO-G4

e3

1

1

4

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

2 W

AEC-Q101

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

150 MHz

.5 V

SBCP68T1G by Onsemi

SBCP68T1G

Onsemi

SBCP68T1G by Onsemi is a NPN BJT transistor with VCEsat of 0.5V, hFE of 60, and IC of 1A. Ideal for switching applications in automotive electronics due to AEC-Q101 standard compliance and small outline package style. Operating temperature range from -65 to 150°C makes it suitable for various environments.

COLLECTOR

1 A

20 V

SINGLE

60

TO-261

R-PDSO-G4

e3

1

1

4

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1.5 W

AEC-Q101

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

60 MHz

.5 V

2STL2580-AP by STMicroelectronics

2STL2580-AP

STMicroelectronics

2STL2580-AP by STMicroelectronics is a NPN BJT with 1A IC, 60 hFE, and 1.5W Pd. Ideal for power applications, it operates up to 150 °C making it suitable for various electronic designs requiring high current amplification in a single configuration.

1 A

SINGLE

60

1

150 Cel

NPN

1.5 W

Other Transistors

NO

BCP5416QTA by Diodes Incorporated

BCP5416QTA

Diodes Incorporated

Diodes Inc. BCP5416QTA is a NPN BJT transistor for switching applications. Features include VCEsat of 0.5V, hFE of 25, and IC of 1A. With a max operating temp of 150°C, it's ideal for automotive electronics meeting AEC-Q101 and IATF 16949 standards.

COLLECTOR

1 A

25 pF

45 V

SINGLE

25

R-PDSO-G4

e3

1

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

2 W

AEC-Q101; IATF 16949

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

150 MHz

.5 V

BCP6925E6327HTSA1 by Infineon Technologies

BCP6925E6327HTSA1

Infineon Technologies

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): 1 A; Terminal Position: DUAL;

COLLECTOR

1 A

20 V

SINGLE

160

R-PDSO-G4

1

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

YES

GULL WING

DUAL

AMPLIFIER

SILICON

100 MHz

BCP5610E6327HTSA1 by Infineon Technologies

BCP5610E6327HTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 1 A;

TR, 7 INCH; 1000

COLLECTOR

1 A

80 V

SINGLE

63

R-PDSO-G4

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

2 W

AEC-Q101

YES

GULL WING

DUAL

AMPLIFIER

SILICON

100 MHz

.5 V

BCP5616E6327HTSA1 by Infineon Technologies

BCP5616E6327HTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 1 A;

TR, 7 INCH; 1000

COLLECTOR

1 A

80 V

SINGLE

100

R-PDSO-G4

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

2 W

AEC-Q101

YES

GULL WING

DUAL

AMPLIFIER

SILICON

100 MHz

.5 V

BCX5216E6327HTSA1 by Infineon Technologies

BCX5216E6327HTSA1

Infineon Technologies

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 125 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 1 A;

TR, 7 INCH: 1000

COLLECTOR

1 A

60 V

SINGLE

100

R-PSSO-F3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

2 W

AEC-Q101

YES

FLAT

SINGLE

AMPLIFIER

SILICON

125 MHz

.5 V

BCP53QTA by Diodes Incorporated

BCP53QTA

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 1 A;

HIGH RELIABILITY

COLLECTOR

1 A

25 pF

80 V

SINGLE

25

R-PDSO-G4

e3

1

1

4

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

2 W

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

150 MHz

.5 V

BCP5316QTA by Diodes Incorporated

BCP5316QTA

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 1 A;

HIGH RELIABILITY

COLLECTOR

1 A

25 pF

80 V

SINGLE

100

R-PDSO-G4

e3

1

1

4

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

2 W

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

150 MHz

.5 V

DCP69-16-13 by Diodes Incorporated

DCP69-16-13

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

17 pF

20 V

SINGLE

100

R-PDSO-G4

e3

1

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

2 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

200 MHz

.5 V

FZT957QTC by Diodes Incorporated

FZT957QTC

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 85 MHz; Maximum Power Dissipation (Abs): 3 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

23 pF

300 V

SINGLE

90

R-PDSO-G4

e3

1

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

3 W

AEC-Q101; IATF 16949; MIL-STD-202

YES

Matte Tin (Sn)

GULL WING

DUAL

30

SILICON

85 MHz

.24 V

DCP69-25-13 by Diodes Incorporated

DCP69-25-13

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

17 pF

20 V

SINGLE

160

R-PDSO-G4

e3

1

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

2 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

200 MHz

.5 V

BCX53H6327XTSA1 by Infineon Technologies

BCX53H6327XTSA1

Infineon Technologies

BCX53H6327XTSA1 by Infineon Technologies is a PNP BJT transistor with 80V VCEO, 1A IC, and 2W power dissipation. Ideal for amplifier applications, it has a min hFE of 40 and operates up to 150°C. This surface-mount transistor in a small outline package is AEC-Q101 compliant.

COLLECTOR

1 A

80 V

SINGLE

40

R-PSSO-F3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

2 W

AEC-Q101

Other Transistors

YES

TIN

FLAT

SINGLE

40

AMPLIFIER

SILICON

125 MHz

2STA1837 by STMicroelectronics

2STA1837

STMicroelectronics

2STA1837 by STMicroelectronics is a PNP BJT designed for amplifier applications. It features a max collector-emitter voltage of 230V, a min DC current gain (hFE) of 100, and operates up to 150 °C. Its flange mount design ensures reliable performance in various electronic circuits.

ISOLATED

1 A

230 V

SINGLE

100

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

Not Qualified

NO

MATTE TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

70 MHz

2STC4793 by STMicroelectronics

2STC4793

STMicroelectronics

2STC4793 by STMicroelectronics is an NPN power BJT ideal for amplifier applications. It features a max collector-emitter voltage of 230V, a min DC current gain (hFE) of 100, and operates up to 150 °C. Its through-hole design ensures easy integration in various circuits.

ISOLATED

1 A

230 V

SINGLE

100

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

Not Qualified

NO

MATTE TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

100 MHz

ST13003DN by STMicroelectronics

ST13003DN

STMicroelectronics

ST13003DN by STMicroelectronics is an NPN power BJT designed for switching applications. It features a max collector-emitter voltage of 400V, power dissipation of 20W, and operates up to 150 °C. Its through-hole design ensures easy integration in various electronic circuits.

1 A

400 V

SINGLE WITH BUILT-IN DIODE

5

TO-126

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

20 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

TIP30G by Onsemi

TIP30G

Onsemi

TIP30G by Onsemi is a PNP BJT transistor with 3 terminals, ideal for switching applications. It has a max power dissipation of 30W, max collector-emitter voltage of 40V, and max collector current of 1A. With a min hFE of 15 and operating temp up to 150 °C, it's suitable for various electronic circuits requiring high power handling capabilities.

COLLECTOR

1 A

40 V

SINGLE

15

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

PNP

30 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

3 MHz

ST600K by STMicroelectronics

ST600K

STMicroelectronics

ST600K by STMicroelectronics is a single NPN BJT designed for switching applications. It features a max power dissipation of 12.5W, operates up to 150 °C, and supports collector-emitter voltages up to 120V. Ideal for efficient power management in electronic circuits.

1 A

120 V

SINGLE

50

TO-126

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

12.5 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

ST631K by STMicroelectronics

ST631K

STMicroelectronics

ST631K by STMicroelectronics is a PNP BJT designed for switching applications. It features a max power dissipation of 12.5W, operates up to 150 °C, and supports collector-emitter voltages of 120V. Ideal for efficient circuit designs in various electronic devices.

1 A

120 V

SINGLE

50

TO-126

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

12.5 W

Not Qualified

Other Transistors

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

ST13003N by STMicroelectronics

ST13003N

STMicroelectronics

ST13003N from STMicroelectronics is a single NPN BJT designed for switching applications. It features a max power dissipation of 20W, operates up to 150 °C, and supports collector-emitter voltages of 400V. Ideal for various electronic circuits requiring reliable performance.

1 A

400 V

SINGLE

5

TO-126

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

20 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

BCP5616H6327XTSA1 by Infineon Technologies

BCP5616H6327XTSA1

Infineon Technologies

Infineon's BCP5616H6327XTSA1 is a NPN BJT transistor with 80V VCE, 1A IC, and 0.5V VCEsat. Ideal for amplifier applications, it has a hFE of 100, operates up to 150°C, and comes in a small outline package.

TR, 7 INCH; 1000

COLLECTOR

1 A

80 V

SINGLE

100

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

2 W

AEC-Q101

YES

TIN

GULL WING

DUAL

AMPLIFIER

SILICON

100 MHz

.5 V

BCP5516H6327XTSA1 by Infineon Technologies

BCP5516H6327XTSA1

Infineon Technologies

Infineon's BCP5516H6327XTSA1 is a NPN Power BJT with 60V VCE, 1A IC, and 0.5V VCEsat. Ideal for amplifier applications, it has a small outline package, 100MHz fT, and AEC-Q101 compliance.

TR, 7 INCH; 1000

COLLECTOR

1 A

60 V

SINGLE

40

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

2 W

AEC-Q101

YES

TIN

GULL WING

DUAL

AMPLIFIER

SILICON

100 MHz

.5 V

BCP6925H6327XTSA1 by Infineon Technologies

BCP6925H6327XTSA1

Infineon Technologies

Infineon's BCP6925H6327XTSA1 is a PNP Power BJT with 160 min hFE, 20V VCE max, and 1A IC max. Ideal for amplifier applications, it comes in a small outline package with Gull Wing terminals for surface mounting.

COLLECTOR

1 A

20 V

SINGLE

160

R-PDSO-G4

e3

1

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

YES

TIN

GULL WING

DUAL

AMPLIFIER

SILICON

100 MHz

BCP51-16-TP by Micro Commercial Components

BCP51-16-TP

Micro Commercial Components

BCP51-16-TP by Micro Commercial Components is a PNP BJT with VCEsat of 0.5V, hFE of 100, and IC of 1A. Ideal for power applications in small outline packages, it operates b/w -55 to 150°C with a max VCE of 45V.

COLLECTOR

1 A

45 V

SINGLE

100

R-PDSO-G4

e3

1

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

1.5 W

YES

MATTE TIN

GULL WING

DUAL

10

SILICON

100 MHz

.5 V

BCP55-16-TP by Micro Commercial Components

BCP55-16-TP

Micro Commercial Components

BCP55-16-TP by Micro Commercial Components is a NPN Power BJT with VCEsat of 0.5V, hFE of 100, and IC of 1A. Ideal for applications requiring high power dissipation up to 1.5W in small outline packages, operating b/w -55°C to 150°C. Suitable for surface mount designs needing a compact and efficient transistor solution.

COLLECTOR

1 A

60 V

SINGLE

100

R-PDSO-G4

e3

1

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1.5 W

YES

MATTE TIN

GULL WING

DUAL

10

SILICON

100 MHz

.5 V

BCX5316H6327XTSA1 by Infineon Technologies

BCX5316H6327XTSA1

Infineon Technologies

Infineon's BCX5316H6327XTSA1 is a PNP BJT with 2W power dissipation, hFE of 100, and IC of 1A. Ideal for surface mount applications, it operates up to 150°C making it suitable for power management in various electronic devices.

1 A

SINGLE

100

e3

1

1

150 Cel

245

PNP

2 W

Other Transistors

YES

TIN

BSR41F by Nexperia

BSR41F

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): 1 A; Case Connection: COLLECTOR;

COLLECTOR

1 A

60 V

SINGLE

50

TO-243AA

R-PSSO-F3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

YES

TIN

FLAT

SINGLE

30

SWITCHING

SILICON

100 MHz

BSR30F by Nexperia

BSR30F

Nexperia

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): 1 A; Transistor Application: SWITCHING;

COLLECTOR

1 A

60 V

SINGLE

10

TO-243AA

R-PSSO-F3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101; IEC-60134

YES

TIN

FLAT

SINGLE

30

SWITCHING

SILICON

100 MHz

TIP29CPBFREE by Central Semiconductor

TIP29CPBFREE

Central Semiconductor

TIP29CPBFREE by Central Semiconductor is a NPN BJT transistor with VCEsat of 0.7V, hFE of 15, and IC of 1A. Ideal for switching applications, it has a max power dissipation of 30W and operates b/w -65 to 150°C. Its through-hole terminals make it suitable for various electronic devices.

1 A

100 V

SINGLE

15

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

2 W

30 W

NO

MATTE TIN OVER NICKEL

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

3 MHz

.7 V

BCP68-25H6327 by Infineon Technologies

BCP68-25H6327

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): 1 A; Minimum DC Current Gain (hFE): 60;

COLLECTOR

1 A

20 V

SINGLE

60

R-PDSO-G4

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

YES

GULL WING

DUAL

NOT SPECIFIED

AMPLIFIER

SILICON

100 MHz

BCP56-16-AU_R2_000A1 by Panjit International

BCP56-16-AU_R2_000A1

Panjit International

Panjit International's BCP56-16-AU_R2_000A1 is a NPN Power BJT with 100V VCE, 1A IC, and 40 hFE. Ideal for AEC-Q101 compliant automotive applications due to its small outline package and high transition frequency of 100MHz.

COLLECTOR

1 A

100 V

SINGLE

40

R-PDSO-G4

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

AEC-Q101

YES

GULL WING

DUAL

SILICON

100 MHz

BCX56-16-AU_R1_000A1 by Panjit International

BCX56-16-AU_R1_000A1

Panjit International

BCX56-16-AU_R1_000A1 by Panjit Int. is a NPN BJT transistor with hFE of 40, VCE of 100V, and IC of 1A. It operates b/w -55°C to 150°C, suitable for power applications in automotive electronics meeting AEC-Q101 standards.

COLLECTOR

1 A

100 V

SINGLE

40

R-PSSO-F3

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

AEC-Q101

YES

FLAT

SINGLE

NOT SPECIFIED

SILICON

100 MHz

BCP5610QTA by Diodes Incorporated

BCP5610QTA

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 1 A;

HIGH RELIABILITY

COLLECTOR

1 A

25 pF

80 V

SINGLE

25

R-PDSO-G4

e3

1

1

4

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

2 W

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

150 MHz

.5 V

BCP5610QTC by Diodes Incorporated

BCP5610QTC

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 1 A;

HIGH RELIABILITY

COLLECTOR

1 A

25 pF

80 V

SINGLE

25

R-PDSO-G4

e3

1

1

4

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

2 W

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

150 MHz

.5 V

BCP5616TQTA by Diodes Incorporated

BCP5616TQTA

Diodes Incorporated

BCP5616TQTA by Diodes Inc. is a NPN BJT transistor for switching applications. With VCEsat of 0.5V, hFE of 40, and IC of 1A, it operates at temperatures from -55 to 150°C. This small outline package with Gull Wing terminals is ideal for high-speed switching in automotive and industrial electronics.

COLLECTOR

1 A

25 pF

80 V

SINGLE

40

R-PDSO-G4

e3

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

2.5 W

AEC-Q101; IATF 16949; MIL-STD-202

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

150 MHz

.5 V

BCP5616TQTC by Diodes Incorporated

BCP5616TQTC

Diodes Incorporated

Diodes Inc. BCP5616TQTC is a NPN BJT transistor for switching applications. Features include VCEsat of 0.5V, hFE of 40, and IC of 1A. Ideal for small outline SMT designs in automotive and industrial electronics with operating temp range -55 to 150°C.

COLLECTOR

1 A

25 pF

80 V

SINGLE

40

R-PDSO-G4

e3

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

2.5 W

AEC-Q101; IATF 16949; MIL-STD-202

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

150 MHz

.5 V

BCP56-16-QF by Nexperia

BCP56-16-QF

Nexperia

Nexperia's BCP56-16-QF is a NPN BJT transistor for switching applications. With VCEsat of 0.5V, hFE of 40, and IC of 1A, it operates at -55 to 150°C. Its GULL WING terminals and COLLECTOR case connection make it suitable for surface mount designs in automotive electronics.

COLLECTOR

1 A

6 pF

80 V

SINGLE

40

R-PDSO-G4

e3

1

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1.35 W

AEC-Q101; IEC-60134

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

180 MHz

.5 V

BCP56-16T-QF by Nexperia

BCP56-16T-QF

Nexperia

BCP56-16T-QF by Nexperia is a NPN Power BJT for switching applications. It features a max VCEsat of 0.5V, hFE of 63, and can handle a max IC of 1A. With a small outline package style and peak reflow temperature of 260°C, it meets AEC-Q101 and IEC-60134 standards for automotive use.

COLLECTOR

1 A

4.5 pF

80 V

SINGLE

63

R-PDSO-G4

e3

1

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1.8 W

AEC-Q101; IEC-60134

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

155 MHz

.5 V

BCP5616TTC by Diodes Incorporated

BCP5616TTC

Diodes Incorporated

Diodes Inc. BCP5616TTC is a NPN BJT transistor for switching applications. Features include VCEsat of 0.5V, hFE of 40, and IC of 1A. Ideal for small outline packages in surface mount configurations with a max operating temp of 150°C.

COLLECTOR

1 A

25 pF

80 V

SINGLE

40

R-PDSO-G4

e3

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

2.5 W

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

150 MHz

.5 V

BCP5616TTA by Diodes Incorporated

BCP5616TTA

Diodes Incorporated

Diodes Inc. BCP5616TTA is a NPN BJT transistor for switching applications. Features include VCEsat of 0.5V, hFE of 40, and IC of 1A. Ideal for small outline packages in surface mount designs with operating temperatures up to 150°C.

COLLECTOR

1 A

25 pF

80 V

SINGLE

40

R-PDSO-G4

e3

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

2.5 W

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

150 MHz

.5 V

DXTN06080BFG-7 by Diodes Incorporated

DXTN06080BFG-7

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 130 MHz; Maximum Power Dissipation (Abs): 2.1 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

11 pF

80 V

SINGLE

25

S-PDSO-F8

e3

1

8

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

NPN

2.1 W

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON

130 MHz

.5 V

BCP56-QF by Nexperia

BCP56-QF

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 180 MHz; Maximum Power Dissipation (Abs): 1.35 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

6 pF

80 V

SINGLE

40

R-PDSO-G4

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

1.35 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

180 MHz

.5 V

BCP56-10T-QF by Nexperia

BCP56-10T-QF

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 155 MHz; Maximum Power Dissipation (Abs): 1.8 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

4.5 pF

80 V

SINGLE

63

R-PDSO-G4

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

1.8 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

155 MHz

.5 V

BCP56-QX by Nexperia

BCP56-QX

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 180 MHz; Maximum Power Dissipation (Abs): 1.35 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

6 pF

80 V

SINGLE

40

R-PDSO-G4

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

1.35 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

180 MHz

.5 V