Loading...

60 A Insulated Gate Bipolar Transistors (IGBT) 86

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
STGW30N120KD by STMicroelectronics

STGW30N120KD

STMicroelectronics

STGW30N120KD IGBT from STMicroelectronics is ideal for motor control applications, featuring a max collector-emitter voltage of 1200 V and power dissipation of 220 W. It has a fast turn-on time of 57 ns and operates at up to 125 °C. This N-channel device ensures efficient performance in demanding environments.

60 A

1200 V

SINGLE WITH BUILT-IN DIODE

5.75 V

25 V

TO-247AC

R-PSFM-T3

1

3

125 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

220 W

Not Qualified

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

MOTOR CONTROL

SILICON

756 ns

57 ns

STGW33IH120D by STMicroelectronics

STGW33IH120D

STMicroelectronics

STGW33IH120D IGBT from STMicroelectronics features a max collector-emitter voltage of 1200 V and power dissipation of 220 W, ideal for motor control applications. It has a fast turn-on time of 57 ns and operates at up to 150 °C. This N-channel device ensures efficient performance in demanding environments.

60 A

1200 V

SINGLE WITH BUILT-IN DIODE

5.75 V

25 V

TO-247AC

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

220 W

Not Qualified

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

MOTOR CONTROL

SILICON

740 ns

57 ns

NGTB30N65IHL2WG by Onsemi

NGTB30N65IHL2WG

Onsemi

N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Maximum Collector Current (IC): 60 A; Maximum Gate-Emitter Threshold Voltage: 6.5 V; JESD-609 Code: e3;

60 A

650 V

6.5 V

20 V

e3

175 Cel

N-CHANNEL

300 W

Insulated Gate BIP Transistors

NO

Matte Tin (Sn) - annealed

STGW35HF60WD by STMicroelectronics

STGW35HF60WD

STMicroelectronics

STGW35HF60WD from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600 V, 200 W power dissipation, and fast switching times (ton: 45 ns, toff: 295 ns). Ideal for high-temperature environments with a max operating temp of 150 °C.

LOW CONDUCTION LOSS

60 A

600 V

SINGLE WITH BUILT-IN DIODE

5.75 V

20 V

TO-247

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

200 W

Not Qualified

Insulated Gate BIP Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

295 ns

45 ns

STGB30NC60KT4 by STMicroelectronics

STGB30NC60KT4

STMicroelectronics

STGB30NC60KT4 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600 V, 60 A collector current, and fast switching times (ton: 41 ns, toff: 290 ns). Ideal for high-performance power management in compact designs.

60 A

600 V

SINGLE

6.5 V

20 V

TO-263AB

R-PSSO-G2

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

185 W

Not Qualified

Insulated Gate BIP Transistors

YES

GULL WING

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

290 ns

41 ns

STGB30NC60WT4 by STMicroelectronics

STGB30NC60WT4

STMicroelectronics

STGB30NC60WT4 from STMicroelectronics is a robust N-channel IGBT ideal for motor control applications. It features a max collector-emitter voltage of 600V, power dissipation of 200W, and operates at up to 150 °C. Its compact surface mount design ensures efficient performance in various electronic systems.

60 A

600 V

SINGLE

5.75 V

20 V

TO-263AB

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

245

N-CHANNEL

200 W

Not Qualified

Insulated Gate BIP Transistors

YES

MATTE TIN

GULL WING

SINGLE

30

MOTOR CONTROL

SILICON

189 ns

42.5 ns

STGP30NC60K by STMicroelectronics

STGP30NC60K

STMicroelectronics

STGP30NC60K from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600 V, a power dissipation of 185 W, and operates at up to 150 °C. Ideal for high-performance switching in industrial systems.

60 A

600 V

SINGLE

6.5 V

20 V

TO-220AB

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

185 W

Not Qualified

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

290 ns

41 ns

STGB20NC60VT4 by STMicroelectronics

STGB20NC60VT4

STMicroelectronics

STGB20NC60VT4 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600 V, a power dissipation of 200 W, and operates at up to 150 °C. Ideal for high-performance switching in industrial systems.

60 A

600 V

SINGLE

5.75 V

20 V

TO-263AB

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

245

N-CHANNEL

200 W

Not Qualified

Insulated Gate BIP Transistors

YES

MATTE TIN

GULL WING

SINGLE

30

POWER CONTROL

SILICON

280 ns

42.5 ns

STGW35NC120HD by STMicroelectronics

STGW35NC120HD

STMicroelectronics

STGW35NC120HD from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 1200 V, 60 A collector current, and a turn-off time of just 928 ns. Ideal for high-performance switching in industrial systems.

60 A

1200 V

SINGLE WITH BUILT-IN DIODE

5.75 V

25 V

TO-247

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

220 W

Not Qualified

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

928 ns

41 ns

NGTB30N60SWG by Onsemi

NGTB30N60SWG

Onsemi

NGTB30N60SWG by Onsemi is an N-CHANNEL IGBT with 600V VCE, 60A IC, and 189W Pd. It has a toff of 285ns and ton of 90ns, suitable for power control applications requiring fast switching speeds. The transistor comes in a PLASTIC/EPOXY package with through-hole terminals and can operate up to 150 °C.

COLLECTOR

60 A

600 V

SINGLE WITH BUILT-IN DIODE

6.5 V

20 V

TO-247

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

189 W

Insulated Gate BIP Transistors

NO

Tin (Sn)

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

285 ns

90 ns

STGW35HF60W by STMicroelectronics

STGW35HF60W

STMicroelectronics

STGW35HF60W from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600 V, 200 W power dissipation, and operates at up to 150 °C. Ideal for high-performance switching in industrial systems.

LOW CONDUCTION LOSS

60 A

600 V

SINGLE

5.75 V

20 V

TO-247

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

200 W

Not Qualified

Insulated Gate BIP Transistors

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

295 ns

45 ns

STGP30NC60W by STMicroelectronics

STGP30NC60W

STMicroelectronics

STGP30NC60W from STMicroelectronics is a powerful N-channel IGBT ideal for motor control applications. It features a max collector-emitter voltage of 600 V, 60 A collector current, and fast switching times (ton: 42.5 ns, toff: 189 ns). Its robust design supports high power dissipation up to 200 W at temperatures up to 150 °C.

60 A

600 V

SINGLE

5.75 V

20 V

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

200 W

Not Qualified

Insulated Gate BIP Transistors

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

MOTOR CONTROL

SILICON

189 ns

42.5 ns

STGW30NC60W by STMicroelectronics

STGW30NC60W

STMicroelectronics

STGW30NC60W from STMicroelectronics is a powerful N-channel IGBT ideal for motor control applications. It features a max collector-emitter voltage of 600 V, power dissipation of 200 W, and operates at up to 150 °C. Its fast switching times enhance efficiency in various systems.

60 A

600 V

SINGLE

5.75 V

20 V

TO-247AC

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

200 W

Not Qualified

Insulated Gate BIP Transistors

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

MOTOR CONTROL

SILICON

189 ns

42.5 ns

STGB20NC60V by STMicroelectronics

STGB20NC60V

STMicroelectronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 200 W; Maximum Collector Current (IC): 60 A; Transistor Application: POWER CONTROL;

60 A

600 V

SINGLE

5.75 V

20 V

TO-263AB

R-PSSO-G2

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

200 W

YES

GULL WING

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

280 ns

42.5 ns

2.5 V

STGB30H60DLFB by STMicroelectronics

STGB30H60DLFB

STMicroelectronics

N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 260 W; Maximum Collector Current (IC): 60 A; Maximum Operating Temperature: 175 Cel; Peak Reflow Temperature (C): NOT SPECIFIED;

60 A

600 V

7 V

20 V

175 Cel

NOT SPECIFIED

N-CHANNEL

260 W

Insulated Gate BIP Transistors

YES

NOT SPECIFIED

STGB30M65DF2 by STMicroelectronics

STGB30M65DF2

STMicroelectronics

STGB30M65DF2 by STMicroelectronics is an N-CHANNEL IGBT with 650V VCE, 60A IC, and 2V VCEsat. Ideal for POWER CONTROL applications due to its built-in diode, low turn-off time of 310ns, and high power dissipation of 258W. Suitable for surface mount with gull wing terminals in a small outline package.

COLLECTOR

60 A

650 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

TO-263AB

R-PSSO-G2

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

258 W

YES

GULL WING

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

310 ns

47 ns

2 V

STGW30H60DLFB by STMicroelectronics

STGW30H60DLFB

STMicroelectronics

N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 260 W; Maximum Collector Current (IC): 60 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;

60 A

600 V

7 V

20 V

175 Cel

NOT SPECIFIED

N-CHANNEL

260 W

Insulated Gate BIP Transistors

NO

NOT SPECIFIED

STGWA30M65DF2 by STMicroelectronics

STGWA30M65DF2

STMicroelectronics

STGWA30M65DF2 by STMicroelectronics is an N-CHANNEL IGBT with 650V VCEsat, 60A IC, and 258W power dissipation. Ideal for power control applications due to its fast turn-off time of 310ns and high operating temperature of 175°C. Package style is flange mount with through-hole terminals.

COLLECTOR

60 A

650 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

TO-247

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

258 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

310 ns

47 ns

2 V

NGTB30N135IHR1WG by Onsemi

NGTB30N135IHR1WG

Onsemi

NGTB30N135IHR1WG by Onsemi is an N-CHANNEL IGBT with 1350V VCEsat, 60A IC, and 394W power dissipation. Ideal for power control applications, it features a built-in diode and operates b/w -40 to 175 °C.

RC-IGBT

60 A

1350 V

SINGLE WITH BUILT-IN DIODE

6.5 V

20 V

TO-247

R-PSFM-T3

e3

1

3

175 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

394 W

NO

Matte Tin (Sn) - annealed

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

443 ns

3 V

STGB30H60DFB by STMicroelectronics

STGB30H60DFB

STMicroelectronics

STGB30H60DFB by STMicroelectronics is an N-CHANNEL IGBT with 600V VCE, 60A IC, and 223ns toff. Ideal for POWER CONTROL applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package.

COLLECTOR

60 A

600 V

SINGLE WITH BUILT-IN DIODE

TO-263AB

R-PSSO-G2

1

2

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

YES

GULL WING

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

223 ns

51.1 ns

STGW30M65DF2 by STMicroelectronics

STGW30M65DF2

STMicroelectronics

STGW30M65DF2 by STMicroelectronics is an N-CHANNEL IGBT with 650V VCE, 60A IC, and 258W power dissipation. Ideal for POWER CONTROL applications, it features a built-in diode, 310ns turn-off time, and -55 to 175°C operating temperature range.

COLLECTOR

60 A

650 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

TO-247

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

258 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

310 ns

47 ns

2 V

STGWA30H60DFB by STMicroelectronics

STGWA30H60DFB

STMicroelectronics

STGWA30H60DFB from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control. It features a max VCEsat of 2V, supports up to 600V collector-emitter voltage, and operates at temperatures from -55 °C to 175 °C. Ideal for high-performance applications, it ensures reliable operation with a built-in diode.

COLLECTOR

60 A

600 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

TO-247

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

260 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

223 ns

51.1 ns

2 V

STGWT30HP65FB by STMicroelectronics

STGWT30HP65FB

STMicroelectronics

STGWT30HP65FB from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max VCEsat of 2V, supports up to 60A collector current, and operates in temperatures ranging from -55 °C to 175 °C. Its robust design ensures reliable performance in demanding environments.

COLLECTOR

60 A

650 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

260 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

223 ns

169 ns

2 V

STGB30H60DLLFBAG by STMicroelectronics

STGB30H60DLLFBAG

STMicroelectronics

STGB30H60DLLFBAG from STMicroelectronics is a robust N-channel IGBT designed for automotive ignition applications. It features a max VCEsat of 2.15V, supports up to 60A collector current, and operates within -55 °C to 175 °C. Its compact surface mount design ensures efficient thermal management and reliability.

COLLECTOR

60 A

600 V

SINGLE WITH BUILT-IN DIODE

2.5 V

20 V

TO-263AB

R-PSSO-G2

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

260 W

AEC-Q101

YES

GULL WING

SINGLE

NOT SPECIFIED

AUTOMOTIVE IGNITION

SILICON

370 ns

2.15 V

RGTV60TS65DGC11 by ROHM

RGTV60TS65DGC11

ROHM

ROHM's RGTV60TS65DGC11 is an N-CHANNEL IGBT with 650V max collector-emitter voltage and 60A max collector current. Ideal for power control applications, it features a single configuration with built-in diode and fast turn-off time of 201ns. Suitable for use in various electronic devices requiring efficient power management.

60 A

650 V

SINGLE WITH BUILT-IN DIODE

TO-247

R-PSFM-T3

e3

1

3

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

201 ns

45 ns

IHW30N65R5XKSA1 by Infineon Technologies

IHW30N65R5XKSA1

Infineon Technologies

IHW30N65R5XKSA1 by Infineon is an N-CHANNEL IGBT with 650V max collector-emitter voltage and 60A max collector current. It has a built-in diode, 258ns turn-off time, and 44ns turn-on time. Ideal for power control applications due to its single configuration and flange mount package style.

60 A

650 V

SINGLE WITH BUILT-IN DIODE

TO-247

R-PSFM-T3

e3

1

3

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

258 ns

44 ns

IKW30N65WR5XKSA1 by Infineon Technologies

IKW30N65WR5XKSA1

Infineon Technologies

IKW30N65WR5XKSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max VCE of 650V and IC of 60A. It has a toff of 429ns and ton of 49ns, making it ideal for POWER CONTROL applications. The transistor comes in a PLASTIC/EPOXY package style with THROUGH-HOLE terminals.

60 A

650 V

SINGLE WITH BUILT-IN DIODE

TO-247

R-PSFM-T3

e3

1

3

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

429 ns

49 ns

IKW30N60TAFKSA1 by Infineon Technologies

IKW30N60TAFKSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 60 A; No. of Elements: 1; Maximum Collector-Emitter Voltage: 600 V;

COLLECTOR

60 A

600 V

SINGLE WITH BUILT-IN DIODE

TO-247

R-PSFM-T3

1

3

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

AEC-Q101

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

382 ns

50 ns

STGB30H65FB by STMicroelectronics

STGB30H65FB

STMicroelectronics

STGB30H65FB from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max VCEsat of 2V, supports up to 60A collector current, and operates in temperatures from -55 °C to 175 °C. Its compact surface mount design ensures versatility in various electronic systems.

COLLECTOR

60 A

650 V

SINGLE

7 V

20 V

TO-263AB

R-PSSO-G2

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

260 W

YES

GULL WING

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

223 ns

51.1 ns

2 V

STGWA30H65FB by STMicroelectronics

STGWA30H65FB

STMicroelectronics

STGWA30H65FB from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max VCEsat of 2V, supports up to 60A collector current, and operates in temperatures ranging from -55 °C to 175 °C. Ideal for high-performance switching tasks, it ensures reliable operation with minimal losses.

60 A

650 V

SINGLE

7 V

20 V

TO-247

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

260 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

223 ns

51.1 ns

2 V

STGWA30H65DFB by STMicroelectronics

STGWA30H65DFB

STMicroelectronics

STGWA30H65DFB from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control. It features a max VCEsat of 2V, supports up to 60A collector current, and operates in temperatures from -55 °C to 175 °C. Ideal for high-performance applications, it ensures reliable operation with built-in diode support.

60 A

650 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

TO-247

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

260 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

223 ns

62.8 ns

2 V

AIKW30N60CTXKSA1 by Infineon Technologies

AIKW30N60CTXKSA1

Infineon Technologies

Infineon's AIKW30N60CTXKSA1 is an N-CHANNEL IGBT with VCEsat of 2.05V and IC of 60A, ideal for POWER CONTROL applications. It has a toff of 388ns, ton of 50ns, and can handle up to 187W power dissipation. Suitable for FLANGE MOUNT installations with a max temp rating of 175°C.

60 A

600 V

SINGLE WITH BUILT-IN DIODE

5.7 V

20 V

TO-247

R-PSFM-T3

e3

1

3

175 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

187 W

AEC-Q101

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

388 ns

50 ns

2.05 V

STGWA30HP65FB by STMicroelectronics

STGWA30HP65FB

STMicroelectronics

STGWA30HP65FB from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max VCEsat of 2V, supports up to 60A collector current, and operates in temperatures from -55 °C to 175 °C. Ideal for high-performance switching tasks.

COLLECTOR

60 A

650 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

TO-247

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

260 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

223 ns

169 ns

2 V

FGAF30S65AQ by Onsemi

FGAF30S65AQ

Onsemi

FGAF30S65AQ by Onsemi is an N-CHANNEL IGBT transistor with a max VCEsat of 2.1V and a collector-emitter voltage of 650V. Ideal for switching applications, it has a turn-off time of 166ns and can handle a max collector current of 60A.

60 A

650 V

SINGLE WITH BUILT-IN DIODE

6.6 V

20 V

R-PSFM-T3

e3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

83 W

NO

Matte Tin (Sn) - annealed

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

166 ns

30 ns

2.1 V

IXGA30N120B3-TRL by IXYS Corporation

IXGA30N120B3-TRL

IXYS Corporation

IXGA30N120B3-TRL by IXYS is an N-CHANNEL IGBT with 1200V VCE, 60A IC, and 300W power dissipation. Ideal for power control applications, it has a fast turn-off time of 331ns and low VCEsat of 3.5V. Suitable for surface mount with GULL WING terminals in a RECTANGULAR package.

LOW CONDUCTION LOSS

COLLECTOR

60 A

1200 V

SINGLE

380 ns

5 V

20 V

TO-263AB

R-PSSO-G2

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

300 W

YES

GULL WING

SINGLE

POWER CONTROL

SILICON

580 ns

331 ns

53 ns

3.5 V

AFGB30T65SQDN by Onsemi

AFGB30T65SQDN

Onsemi

AFGB30T65SQDN by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 2.1V and a max IC of 60A, ideal for power control applications. Featuring a single configuration with built-in diode, it has a package style of small outline and can operate b/w -55 to 175 °C. Suitable for surface mount assembly, this transistor offers fast turn-off time (toff) of 78.7ns and turn-on time (ton) of 33.6ns, meeting AEC-Q101 standards.

COLLECTOR

60 A

650 V

SINGLE WITH BUILT-IN DIODE

6 V

30 V

TO-263

R-PSSO-G2

e3

1

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

220 W

AEC-Q101

YES

MATTE TIN

GULL WING

SINGLE

30

POWER CONTROL

SILICON

78.7 ns

33.6 ns

2.1 V

STGWA30IH65DF by STMicroelectronics

STGWA30IH65DF

STMicroelectronics

STGWA30IH65DF from STMicroelectronics is a robust N-channel IGBT designed for power control applications. It features a max VCEsat of 2.05V, supports up to 60A collector current, and operates efficiently b/w -55 °C to 175 °C. Ideal for high-power switching tasks in various electronic systems.

COLLECTOR

60 A

650 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

TO-247

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

180 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

312 ns

2.05 V

STGP30IH65DF by STMicroelectronics

STGP30IH65DF

STMicroelectronics

STGP30IH65DF by STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max VCEsat of 2.05V, supports up to 60A collector current, and operates in temperatures from -55 °C to 175 °C. Ideal for high-performance switching tasks.

COLLECTOR

60 A

650 V

SINGLE WITH BUILT-IN DIODE

7 V

30 V

TO-220AB

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

180 W

NO

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

233 ns

2.05 V