Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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NGTB25N120IHLWG
Onsemi
NGTB25N120IHLWG by Onsemi is an N-CHANNEL IGBT with 1200V VCE, 50A IC, and 475ns toff. Ideal for power control applications due to its 192W Pdiss, FLANGE MOUNT package style, and built-in diode configuration.
COLLECTOR
50 A
1200 V
SINGLE WITH BUILT-IN DIODE
6.5 V
20 V
TO-247
R-PSFM-T3
e3
1
3
150 Cel
PLASTIC/EPOXY
RECTANGULAR
FLANGE MOUNT
N-CHANNEL
192 W
Insulated Gate BIP Transistors
NO
TIN
THROUGH-HOLE
SINGLE
POWER CONTROL
SILICON
475 ns
NGTB25N120LWG
NGTB25N120LWG by Onsemi is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, 50A max collector current, and 192W max power dissipation. Ideal for motor control applications due to its single configuration with built-in diode and fast turn-off time of 475ns.
MOTOR CONTROL
117 ns
NGTB25N120FLWG
NGTB25N120FLWG by Onsemi is an N-CHANNEL IGBT with 1200V VCE, 50A IC, and 192W power dissipation. Ideal for high-power applications requiring efficient switching at up to 150 °C operating temperature.
DF160R12W2H3_B11
Infineon Technologies
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 50 A; Terminal Position: UPPER; Case Connection: ISOLATED;
ISOLATED
COMPLEX
R-XUFM-X19
4
19
UNSPECIFIED
NOT SPECIFIED
UL APPROVED
UPPER
375 ns
49 ns
DF80R12W2H3_B11
N-Channel; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 190 W; Maximum Collector Current (IC): 50 A; Maximum Collector-Emitter Voltage: 1200 V;
R-XUFM-X22
2
22
-40 Cel
N-Channel
190 W
600 ns
1.7 V
STGW25H120DF2
STMicroelectronics
STGW25H120DF2 by STMicroelectronics is an N-CHANNEL IGBT with a max VCEsat of 2.6V and a max collector-emitter voltage of 1200V. It is used for power control applications, with a nominal turn off time of 339ns.
7 V
175 Cel
-55 Cel
375 W
MATTE TIN
339 ns
41 ns
2.6 V
BSM35GD120DN2E3224BOSA1
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 50 A; Package Style (Meter): FLANGE MOUNT; No. of Elements: 6;
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
R-XUFM-X17
6
17
Not Qualified
450 ns
120 ns
DDB6U100N16RRBOSA1
Infineon's DDB6U100N16RRBOSA1 is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, 50A max collector current, and 150°C max operating temperature. Ideal for power control applications due to its single configuration with built-in diode and three-phase diode bridge.
SINGLE WITH BUILT-IN DIODE AND THREE PHASE DIODE BRIDGE
DDB6U84N16RRBOSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND THREE PHASE DIODE BRIDGE; Surface Mount: NO; Maximum Collector Current (IC): 50 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Terminal Position: UPPER;
SIGC42T60SNCX1SA2
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 50 A; No. of Terminals: 4; Transistor Application: POWER CONTROL;
600 V
S-XUUC-N4
SQUARE
UNCASED CHIP
YES
NO LEAD
460 ns
95 ns
SIGC42T60UNX1SA1
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 50 A; Transistor Element Material: SILICON; Package Style (Meter): UNCASED CHIP;
S-XUUC-N3
370 ns
79 ns
IGW25T120FKSA1
IGW25T120FKSA1 by Infineon is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, ideal for power control applications. Featuring a 50A max collector current and 790ns turn off time, it operates at up to 150°C. This single configuration transistor has a through-hole terminal form in a rectangular package style.
TO-247AD
790 ns
82 ns
IHW25N120R2FKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 50 A; Maximum Collector-Emitter Voltage: 1200 V; JESD-609 Code: e3;
TO-247AC
463.6 ns
SIGC28T65EX1SA1
N-CHANNEL; Maximum Collector Current (IC): 50 A; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Gate-Emitter Threshold Voltage: 6.4 V; Maximum Operating Temperature: 175 Cel; Maximum Gate-Emitter Voltage: 20 V;
650 V
6.4 V
SIGC57T120R3LEX1SA3
N-CHANNEL; Maximum Collector Current (IC): 50 A; Maximum Gate-Emitter Threshold Voltage: 6.5 V; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Maximum Operating Temperature: 150 Cel; Peak Reflow Temperature (C): NOT SPECIFIED;
DF80R12W2H3B11BOMA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 190 W; Maximum Collector Current (IC): 50 A; Nominal Turn On Time (ton): 49 ns;
DF75R12W1H4FB11BOMA1
N-Channel; Maximum Power Dissipation (Abs): 230 W; Maximum Collector Current (IC): 50 A; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Gate-Emitter Threshold Voltage: 6.5 V; Maximum Operating Temperature: 125 Cel;
125 Cel
230 W
500 ns
58 ns
2.65 V
STGP19NC60S
STGP19NC60S by STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600 V, a power dissipation of 125 W, and operates at up to 150 °C. Its fast switching times (ton: 23.5 ns, toff: 535 ns) enhance performance in various electronic systems.
FREE WHEELING DIODE
5.75 V
TO-220AB
125 W
535 ns
23.5 ns
GT50N322A
Toshiba
Toshiba's GT50N322A is an N-CHANNEL IGBT with 1000V max collector-emitter voltage, 50A max collector current, and 700ns turn-off time. Ideal for power control applications, it features a single configuration with built-in diode in a rectangular package style suitable for flange mount installations.
1000 V
700 ns
330 ns
MGD623S
Sanken Electric
The Sanken Electric MGD623S is an N-CHANNEL IGBT transistor with a max voltage of 600V and current of 50A. It has a turn-off time of 420ns and turn-on time of 175ns, making it ideal for power control applications. The package style is flange mount with a plastic/epoxy body material.
420 ns
175 ns
NXH100B120H3Q0PTG
NXH100B120H3Q0PTG by Onsemi is an N-CHANNEL IGBT with 2 elements, built-in diode, and thermistor. It has a max VCEsat of 2.3V and can handle up to 50A collector current. Ideal for power control applications due to its high power dissipation of 186W and operating temperature range from -40 °C to 150°C.
RC-IGBT
COMMON COLLECTOR, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
186 W
291 ns
61 ns
2.3 V
NXH100B120H3Q0SG
NXH100B120H3Q0SG by Onsemi is an N-CHANNEL IGBT with 2 elements, diode, and thermistor. It has a VCEsat of 2.3V, IC of 50A, and Pmax of 186W. Ideal for power control applications due to its fast ton of 61ns and toff of 291ns at temperatures ranging from -40 °C to +150°C.
NXH100B120H3Q0STG
NXH100B120H3Q0STG by Onsemi is an N-CHANNEL IGBT with 2 elements, built-in diode, and thermistor. It has a max VCEsat of 2.3V and can handle up to 50A collector current. Ideal for power control applications due to its high power dissipation of 186W and operating temperature range from -40 °C to 150°C.
Matte Tin (Sn) - annealed
DF120R12W2H3B27BOMA1
Infineon's DF120R12W2H3B27BOMA1 IGBT features 1200V VCEsat, 50A IC, and 180W power dissipation. Ideal for high-power applications like motor drives, renewable energy systems, and industrial automation due to its N-CHANNEL polarity and fast switching times.
R-XUFM-X20
20
180 W
360 ns
60 ns
2.4 V
NGTB25N120SWG
NGTB25N120SWG by Onsemi is an N-CHANNEL IGBT with VCEsat of 2.4V, IC of 50A, and Ptot of 385W. Ideal for power control applications due to its built-in diode and fast turn-off time (toff) of 430ns. Operates in temperatures ranging from -55 °C to 175°C, making it suitable for various industrial uses.
385 W
430 ns
178 ns
STGW25S120DF3
STGW25S120DF3 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max VCEsat of 2.1V, supports up to 375W power dissipation, and operates at temperatures from -55 °C to 175 °C. Ideal for high-voltage systems with a max collector-emitter voltage of 1200V.
593 ns
43 ns
2.1 V
STGWA25S120DF3
STGWA25S120DF3 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control. It features a max VCEsat of 2.1V, supports up to 375W power dissipation, and operates at temperatures from -55 °C to 175 °C. Ideal for high-voltage applications with a max collector-emitter voltage of 1200V.
STGWA25H120F2
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 375 W; Maximum Collector Current (IC): 50 A; Peak Reflow Temperature (C): NOT SPECIFIED;
STGWA25H120DF2
STGWA25H120DF2 by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 2.6V, IC of 50A, and Pmax of 375W. Ideal for power control applications due to its fast turn-off time (toff) of 339ns and high collector-emitter voltage of 1200V. Package style: FLANGE MOUNT, suitable for high-power operations in various industries.
NGTB25N120FL3WG
NGTB25N120FL3WG by Onsemi is an N-CHANNEL IGBT with 1200V VCEsat, 50A IC, and 349W power dissipation. Ideal for power control applications, it features a built-in diode and operates b/w -55 to 175 °C. This FLANGE MOUNT device has a turn-off time of 282ns and turn-on time of 36ns.
349 W
282 ns
36 ns
1.95 V
IHW25N120E1XKSA1
IHW25N120E1XKSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max voltage of 1200V and collector current of 50A. It has a turn off time of 1677ns, making it ideal for power control applications. The transistor comes in a rectangular package with through-hole terminals, suitable for flange mount installations.
1677 ns
DF200R12W1H3B27BOMA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 50 A; Nominal Turn Off Time (toff): 475 ns; Package Style (Meter): FLANGE MOUNT;
R-XUFM-X18
18
40 ns
SIGC28T60SEX1SA2
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 50 A; Transistor Application: POWER CONTROL; No. of Terminals: 3;
R-XUUC-N3
A1P50S65M2-F
A1P50S65M2-F by STMicroelectronics is an N-channel IGBT designed for power control applications. It features a max VCEsat of 2.3V, supports up to 50A collector current, and operates at temperatures from -40 °C to 150 °C. Ideal for high-efficiency power management systems.
208 W
331 ns
167.2 ns
A1P50S65M2
A1P50S65M2 by STMicroelectronics is an N-channel IGBT designed for power control applications. It features a max VCEsat of 2.3V, supports up to 650V collector-emitter voltage, and operates efficiently at temperatures from -40 °C to 150 °C. With a robust design, it handles up to 208W power dissipation.
A2C50S65M2-F
A2C50S65M2-F by STMicroelectronics is an N-channel IGBT designed for power control applications. It features a max VCEsat of 2.3V, supports up to 650V collector-emitter voltage, and operates efficiently at temperatures from -40 °C to 150 °C. With a power dissipation of 208W, it's ideal for high-performance systems.
R-XUFM-X35
7
35
298 ns
167 ns
A2C50S65M2
A2C50S65M2 by STMicroelectronics is an N-channel IGBT designed for power control applications. It features a max VCEsat of 2.3V, supports up to 50A collector current, and operates in temperatures from -40 °C to 150 °C. Ideal for high-efficiency power management systems.
RGS50TSX2DHRC11
ROHM
ROHM's RGS50TSX2DHRC11 IGBT is a single N-channel transistor with built-in diode, ideal for power control applications. With a max VCEsat of 2.1V and collector current of 50A, it offers efficient performance. Operating at temperatures up to 175°C, this IGBT has a turn-off time of 450ns, making it suitable for high-power applications.
30 V
395 W
AEC-Q101
53 ns
NXH100B120H3Q0PG
N-CHANNEL; Configuration: COMMON COLLECTOR, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 186 W; Maximum Collector Current (IC): 50 A; Maximum Collector-Emitter Voltage: 1200 V;
GT50J341,Q
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Maximum Collector Current (IC): 50 A; Maximum Collector-Emitter Voltage: 600 V;
350 ns
25 V
200 W
270 ns
2.2 V
DGTD120T25S1PT
Diodes Incorporated
DGTD120T25S1PT by Diodes Inc. is an N-CHANNEL IGBT with VCEsat of 2.4V, IC of 50A, and Ptot of 348W. Ideal for power control applications, it features a built-in diode in a rectangular package with through-hole terminals. Operating b/w -40 to 175°C, it has a VCE max of 1200V and ton/toff times of 110/367ns.
260
348 W
367 ns
110 ns
NXH50C120L2C2ESG
NXH50C120L2C2ESG by Onsemi is an N-CHANNEL IGBT with 1200V VCEsat, 50A IC, and 616ns toff. Ideal for power control applications requiring a BRIDGE configuration with built-in diode and thermistor. Package: PLASTIC/EPOXY, Terminals: THROUGH-HOLE, Temp Range: -40°C to 150°C.
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, 1 BRAKE IGBT, THREE PHASE DIODE BRIDGE AND THERMISTOR
6.8 V
R-PDIP-T26
26
IN-LINE
DUAL
616 ns
248 ns
STGF30H65DFB2
STGF30H65DFB2 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max VCEsat of 2.1V, supports up to 50A collector current, and operates at temperatures from -55 °C to 175 °C. Ideal for high-performance switching in industrial systems.
50 W
184 ns
27.5 ns
STGWA30H65DFB2
STGWA30H65DFB2 by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 2.1V, IC of 50A, and Pmax of 167W. Ideal for POWER CONTROL applications due to its fast turn-off time (toff) of 184ns and high collector-emitter voltage rating of 650V. Suitable for use in various power control systems requiring efficient switching capabilities.
167 W
STGP30H65DFB2
STGP30H65DFB2 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control. It features a max VCEsat of 2.1V, supports up to 50A collector current, and operates in temperatures from -55 °C to 175 °C. Ideal for high-performance applications, it ensures reliable operation with built-in diode support.
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