Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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NGTB20N120IHLWG
Onsemi
NGTB20N120IHLWG by Onsemi is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, 40A max collector current, and 485ns nominal turn off time. Ideal for power control applications, it features a single configuration with built-in diode in a rectangular package style suitable for flange mount installations.
COLLECTOR
40 A
1200 V
SINGLE WITH BUILT-IN DIODE
6.5 V
20 V
TO-247
R-PSFM-T3
e3
1
3
150 Cel
PLASTIC/EPOXY
RECTANGULAR
FLANGE MOUNT
N-CHANNEL
192 W
Insulated Gate BIP Transistors
NO
TIN
THROUGH-HOLE
SINGLE
POWER CONTROL
SILICON
485 ns
NGTB20N120LWG
NGTB20N120LWG by Onsemi is an N-CHANNEL IGBT with a max collector-emitter voltage of 1200V and a max collector current of 40A. It has a nominal turn-off time of 485ns and is ideal for motor control applications due to its single configuration with built-in diode. The transistor operates at a max temperature of 150 °C, making it suitable for high-power applications.
MOTOR CONTROL
110 ns
NGTB20N120IHSWG
NGTB20N120IHSWG by Onsemi is an N-CHANNEL IGBT with 1200V VCE, 40A IC, and 156W Pd. Ideal for high-power applications requiring efficient switching at up to 150 °C operating temperature.
156 W
STGB20H60DF
STMicroelectronics
STGB20H60DF by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 2V, IC of 40A, and Ptot of 167W. Ideal for power control applications, it has a toff of 259ns and ton of 55.9ns. Suitable for surface mount with a max VCE of 600V and operating temperature range from -55 °C to +175°C.
600 V
7 V
TO-263AB
R-PSSO-G2
2
175 Cel
-55 Cel
SMALL OUTLINE
NOT SPECIFIED
167 W
YES
GULL WING
259 ns
55.9 ns
2 V
NGTB20N120IHRWG
NGTB20N120IHRWG by Onsemi is an N-CHANNEL IGBT with 1200V VCE, 40A IC, and 384W Pd. It operates up to 175°C making it ideal for high-power applications like industrial motor drives and renewable energy systems.
384 W
Matte Tin (Sn) - annealed
STGB20V60DF
STGB20V60DF by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 40A max collector current, and 20V max gate-emitter voltage. It operates at a max temperature of 175 °C, suitable for surface mount applications in various electronic devices.
245
MATTE TIN
STGP20V60DF
N-CHANNEL; Surface Mount: NO; Maximum Collector Current (IC): 40 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Maximum Gate-Emitter Voltage: 20 V; Peak Reflow Temperature (C): NOT SPECIFIED;
FS25R12KE3GBOSA1
Infineon Technologies
FS25R12KE3GBOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 6 elements in a BRIDGE configuration. It has a max collector-emitter voltage of 1200V and can handle a max collector current of 40A. This IGBT is commonly used in applications requiring high power switching capabilities at temperatures up to 150°C.
ISOLATED
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
R-XUFM-X28
6
28
UNSPECIFIED
Not Qualified
UPPER
610 ns
140 ns
BSM30GD60DLCBOSA1
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 40 A; Terminal Form: UNSPECIFIED; Nominal Turn On Time (ton): 39 ns;
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
R-XUFM-X17
17
103 ns
39 ns
FP25R12KS4CBOSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 40 A; Maximum Collector-Emitter Voltage: 1200 V; Package Style (Meter): FLANGE MOUNT;
COMPLEX
R-XUFM-X24
7
24
460 ns
FS25R12KT3BOSA1
FS25R12KT3BOSA1 by Infineon is an N-CHANNEL IGBT with 6 elements in a BRIDGE configuration. It has a toff of 610 ns, ton of 140 ns, and can handle up to 40 A collector current. Ideal for applications requiring high voltage (1200 V) and temperature (150°C) operation such as power supplies and motor drives.
IHW20T120FKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 40 A; Qualification: Not Qualified; No. of Elements: 1;
TO-247AC
790 ns
82 ns
SGB20N60ATMA1
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 40 A; No. of Elements: 1; Nominal Turn Off Time (toff): 313 ns;
LOW CONDUCTION LOSS
313 ns
66 ns
SIGC25T60NCX1SA5
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 40 A; Qualification: Not Qualified; Nominal Turn On Time (ton): 29 ns;
R-XUUC-N3
UNCASED CHIP
NO LEAD
135 ns
29 ns
IHY20N120R3XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 40 A; No. of Elements: 1; Peak Reflow Temperature (C): 260;
260
538 ns
SGW20N60FKSA1
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 40 A; Maximum Collector-Emitter Voltage: 600 V; Package Body Material: PLASTIC/EPOXY;
IGP20N60H3XKSA1
IGP20N60H3XKSA1 by Infineon is an N-CHANNEL IGBT transistor with a max voltage of 600V and max current of 40A. It has a turn on time of 31ns and turn off time of 241ns, making it ideal for power control applications. The package style is flange mount with through-hole terminals, suitable for high-power operations up to 175°C.
TO-220AB
241 ns
31 ns
IGW20N60H3FKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 40 A; Package Body Material: PLASTIC/EPOXY; Nominal Turn Off Time (toff): 241 ns;
37 ns
IKP20N60H3XKSA1
IKP20N60H3XKSA1 by Infineon is an N-CHANNEL IGBT with 600V VCE, 40A IC, and 31ns ton. Ideal for POWER CONTROL applications due to its fast switching speed and high collector current capacity. The PLASTIC/EPOXY package with THROUGH-HOLE terminals ensures easy installation in various systems.
IHY20N135R3XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 40 A; Transistor Element Material: SILICON; Package Body Material: PLASTIC/EPOXY;
1350 V
505 ns
IHW20N135R3FKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 310 W; Maximum Collector Current (IC): 40 A; Terminal Position: SINGLE;
6.4 V
25 V
310 W
385 ns
SIGC19T60SEX1SA1
N-CHANNEL; Maximum Collector Current (IC): 40 A; Maximum Gate-Emitter Voltage: 20 V; Maximum Gate-Emitter Threshold Voltage: 5.6 V; Maximum Collector-Emitter Voltage: 600 V; Peak Reflow Temperature (C): NOT SPECIFIED;
5.6 V
IHW20N120R3FKSA1
IHW20N120R3FKSA1 by Infineon is an N-CHANNEL IGBT with a max voltage of 1200V and current of 40A. It has a turn off time of 538ns, making it ideal for power control applications. The transistor comes in a rectangular package with through-hole terminals and operates at temperatures up to 175°C.
FP25R12KT3BOSA1
FP25R12KT3BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 7 elements, ideal for POWER CONTROL applications. It features a max Collector-Emitter Voltage of 1200V, Nominal Turn Off Time of 610ns, and Max Collector Current of 40A. This RECTANGULAR package has 24 terminals and operates at a max temperature of 150°C.
FP25R12KE3BOSA1
FP25R12KE3BOSA1 by Infineon is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, 40A max collector current, and 610ns nominal turn off time. It is used in applications requiring high power switching such as industrial motor drives and renewable energy systems due to its complex configuration and isolated case connection.
STGW20V60DF
N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 167 W; Maximum Collector Current (IC): 40 A; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Gate-Emitter Voltage: 20 V;
STGWT20V60DF
N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 167 W; Maximum Collector Current (IC): 40 A; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Operating Temperature: 175 Cel;
STGFW20V60F
STGFW20V60F by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 40A max collector current. It has a single configuration with built-in diode, suitable for power control applications. The transistor offers fast switching times of 49ns turn-on and 173ns turn-off, making it ideal for high-speed operations.
173 ns
49 ns
STGW20V60F
STGW20V60F by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 40A max collector current. It has a turn on time of 49ns and turn off time of 173ns, making it ideal for power control applications requiring fast switching speeds. The transistor comes in a rectangular package with through-hole terminals, suitable for flange mount installation.
STGWT20V60F
STGWT20V60F by STMicroelectronics is an N-CHANNEL IGBT with 600V VCE, 40A IC, and 49ns ton. It is used for power control applications due to its single configuration with built-in diode and flange mount package style.
STGW20H60DF
STGW20H60DF by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 2V and IC of 40A. Ideal for POWER CONTROL applications, it has a max VCE of 600V and turn-off time of 259ns. This SINGLE transistor in PLASTIC/EPOXY package operates b/w -55 to 175 °C.
STGWT20H60DF
STGWT20H60DF by STMicroelectronics is an N-CHANNEL IGBT with 600V VCEsat, 40A IC, and 167W power dissipation. Ideal for power control applications due to its fast turn-on/off times and high collector-emitter voltage. Package style: FLANGE MOUNT, terminal form: THROUGH-HOLE, and operating temperature range: -55 to 175 °C.
STGB20NB32LZ
STGB20NB32LZ from STMicroelectronics is an N-channel IGBT designed for automotive ignition applications. It features a max collector-emitter voltage of 325 V, power dissipation of 150 W, and operates at up to 175 °C. Its compact surface mount design ensures efficient performance in demanding environments.
325 V
SINGLE WITH BUILT-IN DIODE AND RESISTOR
TO-263
150 W
AUTOMOTIVE IGNITION
15900 ns
2900 ns
STGB20NB37LZ
STGB20NB37LZ from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector current of 40 A, power dissipation of 150 W, and operates up to 175 °C. Its compact surface mount design ensures versatility in various electronic systems.
ESD PROTECTED
15000 ns
STGWT20IH125DF
STGWT20IH125DF from STMicroelectronics is a high-performance N-channel IGBT ideal for power applications. It features a max VCEsat of 2.5V, 1250V collector-emitter voltage, and handles up to 40A current. Its robust design suits industrial motor drives and renewable energy systems.
1250 V
259 W
285 ns
2.5 V
STGFW20V60DF
STGFW20V60DF by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 2.2V, IC of 40A, and Pmax of 86.7W. Ideal for POWER CONTROL applications due to its fast turn-off time (toff) of 173ns and high operating temperature range (-55 to 175 °C).
86.7 W
2.2 V
IHW20N120R2
IHW20N120R2 by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 1200V and a max collector current of 40A. With a nominal turn-off time of 526ns, it is ideal for applications requiring high power dissipation up to 330W in industrial settings. The package style is flange mount with through-hole terminals, making it suitable for various power electronics applications.
TO-247AD
330 W
526 ns
STGP19NC60WD
STGP19NC60WD from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600V, 40A collector current, and a fast turn-off time of 204ns. Ideal for high-performance switching in industrial systems.
5.75 V
125 W
Matte Tin (Sn)
204 ns
33 ns
STGP19NC60W
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 40 A; JEDEC-95 Code: TO-220AB;
STGP19NC60H
STGP19NC60H from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600V, 40A collector current, and operates at up to 150 °C. Ideal for high-performance switching in industrial systems.
130 W
272 ns
32 ns
STGW20NB60KD
STGW20NB60KD from STMicroelectronics is a powerful N-channel IGBT ideal for motor control applications. It features a max collector-emitter voltage of 600V, power dissipation of 150W, and fast switching times (ton: 76ns, toff: 280ns). Its robust design ensures reliable performance in demanding environments.
280 ns
76 ns
STGB20NB37LZT4
STGB20NB37LZT4 from STMicroelectronics is an N-channel IGBT designed for power control applications. It features a max power dissipation of 200W, a collector current of 40A, and operates at up to 175 °C. Its compact surface mount design ensures efficient thermal management.
200 W
STGB35N35LZ-1
STGB35N35LZ-1 from STMicroelectronics is an N-channel IGBT ideal for power control applications. It features a max collector-emitter voltage of 380V, a power dissipation of 176W, and operates at up to 175 °C. Its built-in diode enhances efficiency in various electronic circuits.
VOLTAGE CLAMPING
380 V
2.3 V
12 V
TO-262AA
R-PSIP-T3
IN-LINE
176 W
37000 ns
7600 ns
STGB35N35LZT4
STGB35N35LZT4 from STMicroelectronics is an N-channel IGBT ideal for power control applications. It features a max collector-emitter voltage of 380V, 40A collector current, and operates at up to 175 °C. Its compact design ensures efficient performance in surface mount configurations.
TO-263AA
R-PDSO-G2
DUAL
30
STGP35N35LZ
STGP35N35LZ from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 380V, 40A collector current, and operates at up to 175 °C. Ideal for high-performance switching in industrial systems.
MG1225H-XBN2MM
Littelfuse
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 40 A; Transistor Application: MOTOR CONTROL; Package Body Material: UNSPECIFIED;
125 Cel
-40 Cel
MG1225H-XN2MM
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 40 A; Maximum Operating Temperature: 125 Cel; Minimum Operating Temperature: -40 Cel;
FS25R12YT3BOMA1
Infineon Technologies' FS25R12YT3BOMA1 is an N-CHANNEL IGBT with 1200V max. collector-emitter voltage and 40A max. collector current. Featuring a complex configuration, it has 6 elements and a nominal turn-off time of 640ns. Ideal for applications requiring high power switching such as industrial motor drives and renewable energy systems.
R-XUFM-X22
22
640 ns
120 ns
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