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40 A Insulated Gate Bipolar Transistors (IGBT) 76

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
FS35R12YT3BOMA1 by Infineon Technologies

FS35R12YT3BOMA1

Infineon Technologies

N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 40 A; Terminal Form: UNSPECIFIED; Terminal Position: UPPER;

ISOLATED

40 A

1200 V

COMPLEX

R-XUFM-X22

6

22

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

NO

UNSPECIFIED

UPPER

SILICON

640 ns

120 ns

NGTB20N120IHWG by Onsemi

NGTB20N120IHWG

Onsemi

NGTB20N120IHWG by Onsemi is an N-CHANNEL IGBT with 1200V max collector-emitter voltage and 40A max collector current. It has a built-in diode, 395ns turn off time, and is ideal for power control applications. Package style is flange mount with through-hole terminals.

40 A

1200 V

SINGLE WITH BUILT-IN DIODE

TO-247

R-PSFM-T3

e3

1

3

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

395 ns

STGFW20H65FB by STMicroelectronics

STGFW20H65FB

STMicroelectronics

N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 52 W; Maximum Collector Current (IC): 40 A; Maximum Gate-Emitter Threshold Voltage: 7 V; Maximum Operating Temperature: 175 Cel;

40 A

650 V

7 V

20 V

175 Cel

NOT SPECIFIED

N-CHANNEL

52 W

Insulated Gate BIP Transistors

NO

NOT SPECIFIED

STGW20H65FB by STMicroelectronics

STGW20H65FB

STMicroelectronics

STGW20H65FB by STMicroelectronics is an N-CHANNEL IGBT with 650V VCE, 40A IC, and 168W power dissipation. Ideal for high-power applications requiring efficient switching at up to 175°C operating temperature.

40 A

650 V

7 V

20 V

175 Cel

NOT SPECIFIED

N-CHANNEL

168 W

Insulated Gate BIP Transistors

NO

NOT SPECIFIED

STGWA20M65DF2 by STMicroelectronics

STGWA20M65DF2

STMicroelectronics

STGWA20M65DF2 from STMicroelectronics is an N-channel IGBT ideal for power control applications. It features a max VCEsat of 2V, 650V collector-emitter voltage, and operates b/w -55 °C to 175 °C. Its compact design supports efficient thermal management in various electronic systems.

40 A

650 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

TO-247

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

166 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

252 ns

39.6 ns

2 V

FPF2C110BI07AS2 by Onsemi

FPF2C110BI07AS2

Onsemi

Onsemi's FPF2C110BI07AS2 is an N-CHANNEL IGBT for POWER CONTROL applications. It features a Max VCEsat of 2.3V, Nominal Turn Off Time of 152ns, and Max Collector-Emitter Voltage of 650V. This COMPLEX transistor with 6 elements operates b/w -40 to 150 °C and has a Max Power Dissipation of 158W in a RECTANGULAR package style.

ISOLATED

40 A

650 V

COMPLEX

6.1 V

20 V

R-XUFM-X30

6

30

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

158 W

NO

UNSPECIFIED

UPPER

POWER CONTROL

SILICON

152 ns

49 ns

2.3 V

STGWT20HP65FB by STMicroelectronics

STGWT20HP65FB

STMicroelectronics

STGWT20HP65FB from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max VCEsat of 2V, supports up to 650V collector-emitter voltage, and operates at temperatures from -55 °C to 175 °C. With a built-in diode and fast switching times (ton: 159ns, toff: 185ns), it's ideal for high-performance systems.

COLLECTOR

40 A

650 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

168 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

185 ns

159 ns

2 V

RGTH40TS65GC11 by ROHM

RGTH40TS65GC11

ROHM

ROHM RGTH40TS65GC11 is an N-CHANNEL IGBT with 650V VCE, 40A IC, and 47ns ton. Ideal for POWER CONTROL applications due to its fast switching times and high current handling capabilities in a RECTANGULAR package.

40 A

650 V

SINGLE

TO-247

R-PSFM-T3

1

3

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

141 ns

47 ns

IHW20N65R5XKSA1 by Infineon Technologies

IHW20N65R5XKSA1

Infineon Technologies

IHW20N65R5XKSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max voltage of 650V and current of 40A. It has a turn-off time of 310ns and turn-on time of 38ns, making it ideal for power control applications. The transistor comes in a rectangular package with through-hole terminals, suitable for flange mount installations.

40 A

650 V

SINGLE WITH BUILT-IN DIODE

TO-247

R-PSFM-T3

1

3

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

310 ns

38 ns

IKB20N60TAATMA1 by Infineon Technologies

IKB20N60TAATMA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 156 W; Maximum Collector Current (IC): 40 A; JEDEC-95 Code: TO-263AB;

COLLECTOR

40 A

600 V

SINGLE WITH BUILT-IN DIODE

5.7 V

20 V

TO-263AB

R-PSSO-G2

1

2

150 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

156 W

AEC-Q101

YES

GULL WING

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

287 ns

35 ns

2.05 V

IKP20N60TAHKSA1 by Infineon Technologies

IKP20N60TAHKSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 156 W; Maximum Collector Current (IC): 40 A; JEDEC-95 Code: TO-220AB;

COLLECTOR

40 A

600 V

SINGLE WITH BUILT-IN DIODE

5.7 V

20 V

TO-220AB

R-PSFM-T3

1

3

150 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

156 W

AEC-Q101

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

287 ns

35 ns

2.05 V

IKW20N60TAFKSA1 by Infineon Technologies

IKW20N60TAFKSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 40 A; Transistor Application: POWER CONTROL; Peak Reflow Temperature (C): NOT SPECIFIED;

COLLECTOR

40 A

600 V

SINGLE WITH BUILT-IN DIODE

TO-247

R-PSFM-T3

1

3

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

AEC-Q101

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

299 ns

36 ns

IHW20N135R5XKSA1 by Infineon Technologies

IHW20N135R5XKSA1

Infineon Technologies

IHW20N135R5XKSA1 by Infineon is an N-CHANNEL IGBT with 1350V VCE, 40A IC, and 288W power dissipation. Ideal for power control applications, it features a built-in diode, 450ns turn-off time, and operates b/w -40 to 175°C.

40 A

1350 V

SINGLE WITH BUILT-IN DIODE

6.4 V

20 V

TO-247

R-PSFM-T3

e3

1

3

175 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

288 W

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

450 ns

1.85 V

FS3L25R12W2H3B11BPSA1 by Infineon Technologies

FS3L25R12W2H3B11BPSA1

Infineon Technologies

N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 40 A; No. of Elements: 12; Transistor Element Material: SILICON;

ISOLATED

40 A

1200 V

COMPLEX

R-XUFM-X34

12

34

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

UL APPROVED

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

GENERAL PURPOSE

SILICON

295 ns

95 ns

DF100R07W1H5FPB53BPSA1 by Infineon Technologies

DF100R07W1H5FPB53BPSA1

Infineon Technologies

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 40 A; Minimum Operating Temperature: -40 Cel; JESD-30 Code: R-XUFM-X26;

ISOLATED

40 A

650 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

R-XUFM-X26

2

26

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

NO

UNSPECIFIED

UPPER

POWER CONTROL

SILICON

40 ns

17 ns

DF100R07W1H5FPB53BPSA2 by Infineon Technologies

DF100R07W1H5FPB53BPSA2

Infineon Technologies

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 40 A; No. of Elements: 2; Terminal Position: UPPER;

ISOLATED

40 A

650 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

R-XUFM-X26

2

26

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

40 ns

17 ns

AIKW40N65DH5XKSA1 by Infineon Technologies

AIKW40N65DH5XKSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 166 W; Maximum Collector Current (IC): 40 A; Maximum Operating Temperature: 175 Cel;

40 A

600 V

SINGLE WITH BUILT-IN DIODE

5.7 V

20 V

TO-247

R-PSFM-T3

e3

1

3

175 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

166 W

AEC-Q101

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

299 ns

36 ns

2.05 V

IKFW50N60DH3EXKSA1 by Infineon Technologies

IKFW50N60DH3EXKSA1

Infineon Technologies

IKFW50N60DH3EXKSA1 by Infineon is an N-CHANNEL IGBT with 600V VCE, 40A IC, and 130W power dissipation. Ideal for power control applications, it features a built-in diode, 220ns turn-off time, and -40 to 175°C operating temperature range.

ISOLATED

40 A

600 V

SINGLE WITH BUILT-IN DIODE

5.7 V

20 V

TO-247

R-PSFM-T3

e3

1

3

175 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

130 W

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

220 ns

58 ns

2.7 V

AIKW20N60CTXKSA1 by Infineon Technologies

AIKW20N60CTXKSA1

Infineon Technologies

Infineon's AIKW20N60CTXKSA1 is an N-CHANNEL IGBT with 600V VCEsat, 40A IC, and 2.05V VCE. Ideal for power control applications, it features a built-in diode and operates b/w -40 to 175°C.

40 A

600 V

SINGLE WITH BUILT-IN DIODE

5.7 V

20 V

TO-247

R-PSFM-T3

e3

1

3

175 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

166 W

AEC-Q101

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

299 ns

36 ns

2.05 V

IXGA20N120A3-TRL by IXYS Corporation

IXGA20N120A3-TRL

IXYS Corporation

IXGA20N120A3-TRL by IXYS Corp is a N-CHANNEL IGBT with VCEsat of 2.5V, IC of 40A, and Pmax of 180W. Ideal for POWER CONTROL applications due to its fast ton of 66ns and high VCE rating of 1200V. This surface mount device operates b/w -55 to +150 °C for efficient power management.

LOW CONDUCTION LOSS

COLLECTOR

40 A

1200 V

SINGLE

5 V

20 V

TO-263AA

R-PSSO-G2

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

180 W

YES

GULL WING

SINGLE

POWER CONTROL

SILICON

1530 ns

66 ns

2.5 V

DF100R07W1H5FPB54BPSA2 by Infineon Technologies

DF100R07W1H5FPB54BPSA2

Infineon Technologies

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 40 A; Maximum VCEsat: 1.55 V; Terminal Position: UPPER;

ISOLATED

40 A

650 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

4.75 V

20 V

R-XUFM-X14

2

14

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

IEC-61140

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SILICON

30 ns

12.6 ns

1.55 V

STGP20H65DFB2 by STMicroelectronics

STGP20H65DFB2

STMicroelectronics

STGP20H65DFB2 by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 2.1V, IC of 40A, and Ptot of 147W. Ideal for POWER CONTROL applications due to its fast turn-off time (toff) of 178ns and high collector-emitter voltage rating of 650V. Package style is FLANGE MOUNT with through-hole terminals.

COLLECTOR

40 A

650 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

TO-220AB

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

147 W

NO

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

178 ns

26 ns

2.1 V

STGWA20HP65FB2 by STMicroelectronics

STGWA20HP65FB2

STMicroelectronics

STGWA20HP65FB2 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control. It features a max VCEsat of 2.1V, supports up to 40A collector current, and operates in temps from -55 °C to 175 °C. Ideal for high-performance applications like motor drives and power converters.

COLLECTOR

40 A

650 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

TO-247

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

147 W

NO

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

178 ns

2.1 V

STGB20H65FB2 by STMicroelectronics

STGB20H65FB2

STMicroelectronics

STGB20H65FB2 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control. It features a max VCEsat of 2.1V, 650V collector-emitter voltage, and operates at temperatures up to 175 °C. Ideal for high-performance applications in energy conversion systems.

COLLECTOR

40 A

650 V

SINGLE

7 V

20 V

TO-263AB

R-PSSO-G2

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

147 W

YES

GULL WING

SINGLE

POWER CONTROL

SILICON

178 ns

26 ns

2.1 V

STGP20H65FB2 by STMicroelectronics

STGP20H65FB2

STMicroelectronics

STGP20H65FB2 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max VCEsat of 2.1V, supports up to 650V collector-emitter voltage, and operates at temperatures from -55 °C to 175 °C. Ideal for high-performance switching in industrial systems.

COLLECTOR

40 A

650 V

SINGLE

7 V

20 V

TO-220AB

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

147 W

NO

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

178 ns

26 ns

2.1 V

STGB20H65DFB2 by STMicroelectronics

STGB20H65DFB2

STMicroelectronics

STGB20H65DFB2 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control. It features a max VCEsat of 2.1V, supports up to 40A collector current, and operates in temperatures from -55 °C to 175 °C. Ideal for high-performance applications, it ensures reliable operation with built-in diode functionality.

COLLECTOR

40 A

650 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

TO-263AB

R-PSSO-G2

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

147 W

YES

GULL WING

SINGLE

POWER CONTROL

SILICON

178 ns

26 ns

2.1 V

STGWA20IH65DF by STMicroelectronics

STGWA20IH65DF

STMicroelectronics

STGWA20IH65DF from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max VCEsat of 2.05V, supports up to 650V collector-emitter voltage, and operates at temperatures from -55 °C to 175 °C. Ideal for high-performance switching in industrial systems.

COLLECTOR

40 A

650 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

TO-247

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

159 W

NO

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

230 ns

2.05 V

STGP20IH65DF by STMicroelectronics

STGP20IH65DF

STMicroelectronics

STGP20IH65DF by STMicroelectronics is an N-channel IGBT designed for power control applications. It features a max VCEsat of 2.05 V, supports up to 650 V collector-emitter voltage, and has a power dissipation of 159 W. Ideal for high-efficiency switching in industrial systems.

COLLECTOR

40 A

650 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

TO-220AB

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

159 W

NO

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

159 ns

2.05 V