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TMX320C5535AZHH10

Texas Instruments

TMX320C5535AZHH10 by Texas Instruments

Texas Instruments TMX320C5535AZHH10 is a 16-bit DSP with 163840 RAM words, operating at a max clock frequency of 12 MHz. Ideal for digital signal processing applications, it features low power mode and boundary scan capability. Package style: GRID ARRAY, Technology: CMOS, Supply Voltage: 1.24-1.43 V.

Median Price

$1.080

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

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Newark

USA . 155 parts In-Stock

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$1.080

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Vyrian

USA . 5,481 parts In-Stock

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Digiode

USA . 1,213 parts In-Stock

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ACDS - Activité Composants Distribution Service

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Bristol Electronics

USA . 105 parts In-Stock

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Dan-Mar Components

USA . 105 parts In-Stock

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AZTECH Wire

Italy . 427 parts In-Stock

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$5.250

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One Stop Electronics

USA . 733 parts In-Stock

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$13.000

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Ampacity Inc.

Singapore . 515 parts In-Stock

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$26.000

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Parana Technologies

USA . 123 parts In-Stock

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$58.581

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DigiPath Technology Company

USA . 2,326 parts In-Stock

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$64.505

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ChromeModa Solutions

Germany . 3,353 parts In-Stock

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$65.821

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$53.973

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IDEA Electronic Components Group

UK . 1,866 parts In-Stock

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$65.821

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$62.530

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$59.239

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Corohmni

South Africa . 1,892 parts In-Stock

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Lixinc

USA . 5,130 parts In-Stock

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Corphita

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Perfect Parts

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Microchip USA

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Cyclops Electronics Ltd (Excess)

UK . 160 parts In-Stock

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Overview

Experience unparalleled performance and reliability with the TMX320C5535AZHH10 by Texas Instruments. As a leader in digital signal processors, Texas Instruments delivers cutting-edge technology that excels in a variety of applications. This high-quality DSP offers customers exceptional value, benefits, and advantages, making it the perfect choice for your next project. Trust Texas Instruments to provide innovative solutions that exceed expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is cost-effective and durable, making the product a reliable choice for long-term use.

Maximum Supply Voltage: 1.43 V

With a high maximum supply voltage, this DSP can handle higher power requirements and deliver optimal performance.

Bit Size: 16

A 16-bit processor allows for more precise calculations and operations, making this product suitable for complex signal processing tasks.

RAM Words: 163840

With a large RAM capacity, this DSP can efficiently store and process a significant amount of data, enhancing its performance capabilities.

Maximum Clock Frequency: 12 MHz

A high maximum clock frequency enables fast data processing and response times, making this DSP suitable for real-time applications.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making this DSP energy-efficient and reliable for various applications.

Technical Specifications

Digital Signal Processors (DSPs) TMX320C5535AZHH10 attributes and parameters. Explore more Digital Signal Processors (DSPs) devices from Texas Instruments

Specs

Additional Features:

IT ALSO OPERATES AT 1.05 V AT 50 MHZ

Address Bus Width:

0

Barrel Shifter:

NO

Bit Size:

16

Boundary Scan:

YES

Maximum Clock Frequency:

12 MHz

External Data Bus Width:

0

Format:

FIXED POINT

Internal Bus Architecture:

MULTIPLE

JESD-30 Code:

S-PBGA-B144

Length:

12 mm

Low Power Mode:

YES

No. of Terminals:

144

Package Body Material:

PLASTIC/EPOXY

Package Code:

BGA

Package Equivalence Code:

BGA144,14X14,32

Package Shape:

Package Style (Meter):

GRID ARRAY

Power Supplies (V):

1.05/1.3,1.8/3.3

Qualification:

Not Qualified

RAM Words:

163840

Maximum Seated Height:

1.4 mm

Sub-Category:

Digital Signal Processors

Maximum Supply Voltage:

1.43 V

Minimum Supply Voltage:

1.24 V

Nominal Supply Voltage:

1.3 V

Surface Mount:

YES

Technology:

CMOS

Terminal Form:

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

12 mm

Peripheral IC Type:

Trade Compliance

TMX320C5535AZHH10 Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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